Abstract: The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

Abstract: The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

Abstract: Provided is a method for stably supplying trimethylamine containing monomethylamine and/or dimethylamine as trace impurities at a constant makeup. The present invention relates to a method for supplying a composition including keeping a storage container that encloses a composition therein at a constant temperature of 10° C. or higher to supply a gas of the composition to a predetermined device. The composition contains, in a gaseous phase, trimethylamine, dimethylethylamine, and at least one of dimethylamine or monomethylamine.

Abstract: To provide a carbon black for batteries capable of readily obtaining a positive electrode for batteries having excellent adhesiveness, and excellent output characteristics and the cycle characteristics. A carbon black for batteries, the carbon black having a BET specific surface area measured according to JIS K6217-2 C method of 100 m2/g or larger, and a surface fluorine concentration X (unit: atom %) and a surface oxygen concentration Y (unit: atom %) measured by X-ray Photoelectron Spectroscopy (XPS) satisfying the following conditions (A) and (B), 0.3?X?4.0 and??(A) 0.1?Y?3.0.

Abstract: A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1): R1—N?R2R3??(1) wherein N is a nitrogen atom; R1 is a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; R2 and R3 are each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.

Abstract: The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a ?-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first ?-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second ?-diketone into contact with the metal film after the first etching step. The first ?-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second ?-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.

Abstract: The present invention aims to provide a dry etching agent having less load on global environment and capable of anisotropic etching without the use of special equipment and obtaining a good processing shape and to provide a dry etching method using the dry etching agent. The dry etching agent according the present invention contains at least a hydrofluoroalkylene oxide represented by the following chemical formula: CF3—CxHyFzO (where x=2 or 3; y=1, 2, 3, 4 or 5; and z=2x?1?y) and having an oxygen-containing three-membered ring. The dry etching method according to the present invention includes selectively etching of at least one kind of silicon-based material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide with the use of a plasma gas generated by plasmatization of the dry etching agent.

Abstract: A dry etching method according to an embodiment of the present disclosure includes reacting an etching target film formed on a surface of a workpiece with a ?-diketone and nitrogen dioxide to etch the etching target film in a non-plasma state, the etching target film containing a metal having an M-O bond energy of 5 eV or higher or an oxide of the metal.

Abstract: The method for producing a filled container of the present invention includes: providing a metal storage container, at least an inner surface of which is formed of a manganese steel and in which the inner surface has a surface roughness Rmax of 10 ?m or less; performing fluorination by bringing the inner surface of the storage container into contact with a gas containing at least one first fluorine-containing gas selected from the group consisting of ClF3, IF7, BrF5, F2, and WF6 at 50° C. or lower; purging the inside of the storage container with an inert gas; and filling the inside of the storage container with at least one second fluorine-containing gas selected from the group consisting of ClF3, IF7, BrF5, F2, and WF6.

Abstract: A substrate processing gas of the present invention contains IF5; and IF7, in which a content of the IF5 is equal to or more than 1 ppm and equal to or less than 2% on a volume basis with respect to a total amount of the IF5 and the IF7.

Abstract: A treatment method according to the present invention includes bringing a metal oxyfluoride of the general formula: MO(6-x)/2Fx (where 0<x<6; and M=W or Mo) into contact with a fluorine-containing gas at a reaction temperature higher than or equal to 0° C. and lower than 400° C., thereby converting the metal oxyfluoride to a metal hexafluoride of the general formula: MF6 (where M=W or Mo). This treatment method enables conversion of the metal oxyfluoride to the high vapor pressure compound without the use of a plasma generator and can be applied to cleaning of a metal fluoride production apparatus or cleaning of a film forming apparatus.

Abstract: A dry etching method according to the present invention includes etching silicon nitride by bringing a mixed gas containing hydrogen fluoride and a fluorine-containing carboxylic acid into contact with the silicon nitride in a plasma-less process at a temperature lower than 100° C. Preferably, the amount of the fluorine-containing carboxylic acid contained is 0.01 vol % or more based on the total amount of the hydrogen fluoride and the fluorine-containing carboxylic acid. Examples of the fluorine-containing carboxylic acid are monofluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, difluoropropionic acid, pentafluoropropionic acid, pentafluorobutyric acid and the like. This dry etching method enables etching of the silicon nitride at a high etching rate and shows a high selectivity ratio of the silicon nitride to silicon oxide and polycrystalline silicon while preventing damage to the silicon oxide.

Abstract: Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a ?-diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the ?-diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the ?-diketone. It is preferable that the ?-diketone used for the dry etching method is supplied from a ?-diketone filled container, wherein the ?-diketone filled container has a sealed container body filled with a ?-diketone whose water content is 15 mass ppm or less relative to the ?-diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

Abstract: A dry etching method according to the present invention includes etching silicon nitride by bringing a mixed gas containing hydrogen fluoride and a fluorine-containing carboxylic acid into contact with the silicon nitride in a plasma-less process at a temperature lower than 100° C. Preferably, the amount of the fluorine-containing carboxylic acid contained is 0.01 vol % or more based on the total amount of the hydrogen fluoride and the fluorine-containing carboxylic acid. Examples of the fluorine-containing carboxylic acid are monofluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, difluoropropionic acid, pentafluoropropionic acid, pentafluorobutyric acid and the like. This dry etching method enables etching of the silicon nitride at a high etching rate and shows a high selectivity ratio of the silicon nitride to silicon oxide and polycrystalline silicon while preventing damage to the silicon oxide.

Abstract: The etching method of the present invention includes the step of supplying a first mixed gas containing a ?-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a ?-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Abstract: The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a ?-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first ?-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second ?-diketone into contact with the metal film after the first etching step. The first ?-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second ?-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.

Abstract: The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

Abstract: The etching method of the present invention includes the step of supplying a first mixed gas containing a ?-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a ?-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Abstract: A production method of tungsten hexafluoride according to one embodiment of the present invention includes: a first step of bringing tungsten having an oxide film into contact with a fluorine gas or inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride in a reactor, thereby removing the oxide film from the tungsten; and a second step of bringing the tungsten from which the oxide film has been removed by the first step into contact with a fluorine-containing gas to form tungsten hexafluoride.

Abstract: Disclosed is a dry etching method which includes: a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature of 0° C. to 100° C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and a second step of evaporating the solid product by heating the solid product in an inert gas atmosphere or vacuum atmosphere at a temperature higher than the reaction temperature of the first step, wherein the specific metal element is one or more kinds of elements selected from the group consisting of Ru, Ta, and Nb.