Abstract: The electronic component includes an element body, an internal conductor, a cover layer, and a conductor layer. The internal conductor is disposed in the element body. The cover layer is disposed on an outer surface of the element body and has an electrical insulation property. The conductor layer is disposed on the cover layer and is electrically connected to the internal conductor. The conductor layer includes a portion. The portion protrudes toward the element body through the cover layer and is physically and electrically connected to the internal conductor. The conductor layer is electrically connected to the internal conductor.

Abstract: A light emitting device includes a resin housing that extends in one direction and holds a light emitting unit emitting light upward in a height direction intersecting the one direction, the housing having, on an upper side and a lower side of each of both end portions in the one direction, a positioned portion, which comes into contact with a positioning member in the height direction, and a biased portion, which receives a biasing force from a biasing unit biasing the housing to bring the positioned portion into contact with the positioning member, and a suppressing member that extends in the one direction and is fixed to the housing to suppress deformation of the housing, at least one end portion of the suppressing member in the one direction being interposed between the biased portion and the biasing unit.

Abstract: A light emitting device includes a light emitting unit in which a resin housing extending in one direction holds a light emitting element emitting light in a light emitting direction intersecting the one direction, a suppressing member that extends in the one direction and suppresses deformation of the housing caused by heat, the suppressing member having a linear expansion coefficient different from a linear expansion coefficient of the housing, and a fixing portion that fixes the housing and the suppressing member to each other at a position overlapping, in the light emitting direction, a neutral axis of the housing or the light emitting unit or a neutral axis of the suppressing member in the light emitting direction, at plural places separated away from each other in the one direction or in a state of extending in the one direction.

Abstract: A light emitting device includes a light emitting unit in which a resin housing extending in one direction holds a light emitting element emitting light in a light emitting direction intersecting the one direction, a suppressing member that extends in the one direction and suppresses deformation of the housing caused by heat, the suppressing member having a linear expansion coefficient different from a linear expansion coefficient of the housing, and a fixing portion that fixes the housing and the suppressing member to each other at a position overlapping, in the light emitting direction, a neutral axis of the housing or the light emitting unit or a neutral axis of the suppressing member in the light emitting direction, at plural places separated away from each other in the one direction or in a state of extending in the one direction.

Abstract: A light emitting device includes a resin housing that extends in one direction and holds a light emitting unit emitting light upward in a height direction intersecting the one direction, the housing having, on an upper side and a lower side of each of both end portions in the one direction, a positioned portion, which comes into contact with a positioning member in the height direction, and a biased portion, which receives a biasing force from a biasing unit biasing the housing to bring the positioned portion into contact with the positioning member, and a suppressing member that extends in the one direction and is fixed to the housing to suppress deformation of the housing, at least one end portion of the suppressing member in the one direction being interposed between the biased portion and the biasing unit.

Abstract: The present invention provides a method of manufacturing a bonded wafer. The method includes ozone washing two silicon wafers to form an oxide film equal to or less than 2.2 nm in thickness on each surface of the two silicon wafers, and bonding the two silicon wafers through the oxide films formed to obtain a bonded wafer.

Abstract: A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.

Abstract: A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.

Abstract: There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

Abstract: A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.

Abstract: A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is formed on the SOI layer at a gradient of Ge concentration gradually decreasing toward the surface and then subjected to a heat treatment in an oxidizing atmosphere.

Abstract: A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle of 0-0.1° (compound angle) with respect to a predetermined crystal face is used in each of the silicon wafer for active layer and silicon wafer for support substrate.

Abstract: There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects. In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for active layer, oxygen ions are implanted into the wafer for active layer to form an oxygen ion implanted layer in the active layer and thereafter a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not lower than 1100° C., and an oxide film formed on the exposed surface of the oxygen ion implanted layer is removed and then a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not higher than 1100° C.

Abstract: In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.

Abstract: The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this, it is possible to reduce variation in the thickness of the solid-state image sensing device at low cost without causing an increase in the number of processes.

Abstract: The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this, it is possible to reduce variation in the thickness of the solid-state image sensing device at low cost without causing an increase in the number of processes.

Abstract: There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

Abstract: Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO2 layer but a layer mixed partially with Si or SiOx, it is removed by here is provided a method for producing a bonded wafer in which it is possible to remove an oxygen ion implanted layer effectively as it is by repetitive treatment with an oxidizing solution and HF solution at a step of removing the oxygen ion implanted layer in a bonded wafer.

Abstract: A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).

Abstract: A method of producing an epitaxial wafer, comprising: implanting oxygen ions from a surface of a silicon wafer, thereby forming an ion implanted layer in a surface layer of the silicon wafer; after forming the ion implanted layer, implanting boron ions from the surface of the silicon wafer to the whole area in the ion implanted layer; performing heat treatment of the silicon wafer after implanting boron ions, thereby forming a thinning-stopper layer including a mixture of silicon particles, silicon oxides, and boron, and forming an active layer in the silicon wafer on the surface side of the thinning-stopper layer; and forming an epitaxial layer on the surface of the silicon wafer after the heat treatment.