Abstract: The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness.

Abstract: The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness.

Abstract: A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including bonded surfaces of the first semiconductor wafer and the second semiconductor wafer have an oxygen concentration of 1.0×1018 atoms/cm3 (Old ASTM or less.

Abstract: The present invention provides a method of manufacturing a bonded wafer. When bonding the top wafer through an insulating film exceeding about 1,000 Angstroms in thickness to the base wafer, a top wafer and a base wafer in which the total number of particles having a size of equal to or greater than about 0.20 micrometers present on the two surfaces being bonded is equal to or less than about 0.014 particles/cm2 are bonded; and when bonding the top wafer through an insulating film having a thickness of equal to or less than about 1,000 Angstroms to the base wafer, or with no insulating film present between the top wafer and the base wafer, a top wafer and a base wafer are bonded wherein the total number of particles having a size of equal to or greater than about 0.20 micrometers present on the two surfaces being bonded is equal to or less than about 0.007 particles/cm2.

Abstract: This SOI substrate includes a base substrate which includes a single-crystal semiconductor and an active layer which includes a single-crystal semiconductor and is bonded to the base substrate with an oxide film therebetween. The oxide film is formed only in the active layer. The active layer is formed with a thickness of 10 to 200 nm and a thickness variation throughout the active layer of 1.5 nm or less by etching a surface of the active layer while selectively using only the reactive radicals generated by a plasma etching process.

Abstract: A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle of 0-0.1° (compound angle) with respect to a predetermined crystal face is used in each of the silicon wafer for active layer and silicon wafer for support substrate.

Abstract: The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness.

Abstract: The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness.

Abstract: There is provided a method of producing a bonded wafer by bonding two silicon wafers for active layer and support layer to each other and then thinning the wafer for active layer, in which nitrogen ions are implanted from the surface of the wafer for active layer to form a nitride layer in the interior of the wafer for active layer before the bonding.

Abstract: There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

Abstract: There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

Abstract: A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.

Abstract: A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is formed on the SOI layer at a gradient of Ge concentration gradually decreasing toward the surface and then subjected to a heat treatment in an oxidizing atmosphere.

Abstract: A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlapping a first semiconductor substrate serving as an active layer onto a second semiconductor substrate serving as a support substrate via an oxide film or without an oxide film; the active layer is formed by forming a thin film from the first semiconductor substrate; and the surface of the active layer is flattened by vapor-phase etching. After forming a thin film from the first semiconductor substrate and before flattening the surface of the active layer by the vapor-phase etching, an organic substance adhering to the surface of the active layer is removed and a native oxide film generated on the surface of the active layer is removed after removing the organic substance.

Abstract: The bonding surfaces of an active layer wafer and a supporting wafer have fitting surfaces each comprising a part of a spherical surface of the same curvature, and they are to be bonded together with their bonding surfaces superposed with each other. As a result, an area left as not-bonded in the outer peripheral portion of the bonded wafer is reduced and thus a fixed quality area can be expanded. Therefore, the yield of the bonded SOI wafer becomes high, and the chipping, wafer peel-off and the like phenomenon in the subsequent steps of wafer processing can be reduced.

Abstract: Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is to be an active layer, on a second semiconductor substrate 12, which is to be a supporting substrate, via an oxide film 11a. Electric resistance of either or both of the first and second semiconductor substrates 11 and 12 before superimposition is 0.005-0.2 ?cm.

Abstract: Since a supporting wafer contains boron of 9×1018 atoms/cm3 or more, therefore a part of the metal impurities in an active layer wafer and the metal impurities in the wafer can be captured by the boron during the heat treatment for bonding. As a result, metal contamination in the active layer can be reduced. Moreover, the wafer strength is enhanced, thus preventing the wafer slipping. Since the wafer has no COP, micro voids are not detected in the LPD evaluation of the active layer, thereby improving the reliability of the evaluation. Such a bonded wafer can be manufactured at a low cast.

Abstract: Since a supporting wafer contains nitrogen of 1×1014 atmos/cm3 and interstitial oxygen atom concentration, Oi, (old ASTM) of 13×1017 atoms/cm3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer can be captured by the BMD and the OSF in the wafer during the heat treatment after the bonding. Consequently, the contamination from the metal impurities in the active layer can be reduced.

Abstract: This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal wafer so as to form light-element bubbles along a cleavage plane parallel to the surface of the single-crystal wafer within an ion-implanted region and thereby splitting off a portion of the single-crystal wafer on an ion-implanted side.

Abstract: A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018 atoms/cm3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.