Abstract: A plasma processing apparatus includes: a chamber including a first member, and a second member detachable from the first member; a conductive member disposed between the first member and the second member; and a first high frequency power supply generating plasma in the chamber. The conductive member includes a resin member made of a resin material, and a metal film covering a surface of the resin member.

Abstract: According to an embodiment, a wireless apparatus includes an interposer including a conductive portion; a semiconductor chip mounted on a component mounting surface of the interposer; a sealing resin on the component mounting surface and sealing the semiconductor chip; a conductive layer covering a surface of the sealing resin and a side surface of the interposer and electrically connected to the conductive portion; a first slot-shaped aperture on a principal surface portion of the conductive layer facing the component mounting surface; a second slot-shaped aperture on a side surface portion of the conductive layer facing the side surface and continuing to the first aperture; and a slot-shaped aperture at the conductive portion and continuing to the second aperture. The first to third apertures function as an integrated slot antenna. A total length of the first aperture is longer than a total length of the third aperture.

Abstract: According to an embodiment, a wireless apparatus includes an interposer including a conductive portion; a semiconductor chip mounted on a component mounting surface of the interposer; a sealing resin on the component mounting surface and sealing the semiconductor chip; a conductive layer covering a surface of the sealing resin and a side surface of the interposer and electrically connected to the conductive portion; a first slot-shaped aperture on a principal surface portion of the conductive layer facing the component mounting surface; a second slot-shaped aperture on a side surface portion of the conductive layer facing the side surface and continuing to the first aperture; and a slot-shaped aperture at the conductive portion and continuing to the second aperture. The first to third apertures function as an integrated slot antenna. A total length of the first aperture is longer than a total length of the third aperture.

Abstract: According to an embodiment, a wireless apparatus includes an interposer including a conductive portion; a semiconductor chip mounted on a component mounting surface of the interposer; a sealing resin on the component mounting surface and sealing the semiconductor chip; a conductive layer covering a surface of the sealing resin and a side surface of the interposer and electrically connected to the conductive portion; a first slot-shaped aperture on a principal surface portion of the conductive layer facing the component mounting surface; a second slot-shaped aperture on a side surface portion of the conductive layer facing the side surface and continuing to the first aperture; and a slot-shaped aperture at the conductive portion and continuing to the second aperture. The first to third apertures function as an integrated slot antenna. A total length of the first aperture is longer than a total length of the third aperture.

Abstract: According to one embodiment, a heat radiating plate-lined ceramic substrate includes a first bonding layer, a plating layer and a heat radiating plate provided in order on the ceramic substrate. The first bonding layer is formed from a molecular bonding material containing a ceramic substrate fixing portion and a plating support portion. The ceramic substrate fixing portion and the first bonding layer are bonded together by the ceramic substrate fixing portion and the plating layer and the first bonding layer are bonded together by the plating support portion.

Abstract: A method for forming a metal wiring according to embodiments includes forming a first insulating layer on a substrate; forming a catalyst adsorption layer by bringing a surface of the first insulating layer into contact with a solution containing a compound having a triazine skeleton, a first functional group of one of a silanol group and an alkoxysilyl group, and a second functional group of at least one selected from the group consisting of an amino group, a thiol group, a carboxyl group, and an azide group; forming a second insulating layer different from the first insulating layer on the catalyst adsorption layer; patterning the second insulating layer to form a mask pattern; etching the first insulating layer by a wet etching method; selectively forming a catalyst layer; and forming a metal layer on the catalyst layer by an electroless plating method.

Abstract: A method for forming a metal wiring according to embodiments includes forming a first insulating layer on a substrate; forming a catalyst adsorption layer by bringing a surface of the first insulating layer into contact with a solution containing a compound having a triazine skeleton, a first functional group of one of a silanol group and an alkoxysilyl group, and a second functional group of at least one selected from the group consisting of an amino group, a thiol group, a carboxyl group, and an azide group; forming a second insulating layer different from the first insulating layer on the catalyst adsorption layer; patterning the second insulating layer to form a mask pattern; etching the first insulating layer by a wet etching method; selectively forming a catalyst layer; and forming a metal layer on the catalyst layer by an electroless plating method.

Abstract: A semiconductor device includes a semiconductor chip having a terminal thereon, a lead frame for connection to an external device, a bonding wire connecting the terminal of the semiconductor chip and the lead frame. A mold resin layer encloses the semiconductor chip and the bonding wire, such that a portion of the lead frame extends out of the mold resin layer. A molecular bonding layer has a portion on a surface of the bonding wire and includes a first molecular portion covalently bonded to a material of the bonding wire and a material of the mold resin layer.

Abstract: A metal pattern forming method according to an embodiment includes forming a metal film on a surface of a substrate by an electroless plating method, the substrate including a first layer including a protrusion and a recess, and a film thickness of the metal film being a half or more of a width of the recess; and performing wet etching, the metal film in the recess removed by the wet etching and the metal film on the protrusion remained after the wet etching.

Abstract: A metal pattern forming method according to an embodiment includes forming a metal film on a surface of a substrate by an electroless plating method, the substrate including a first layer including a protrusion and a recess, and a film thickness of the metal film being a half or more of a width of the recess; and performing wet etching, the metal film in the recess removed by the wet etching and the metal film on the protrusion remained after the wet etching.

Abstract: A method of forming a metal pattern includes forming a catalyst adsorption layer by bringing a surface of a substrate into contact with a solution, the substrate having a base region and a plurality of protrusions provided on the base region, the base region includes a first material, the protrusions includes a second material different from the first material, the first and the second material being exposed on the surface, and the solution containing a compound having a triazine skeleton, a first functional group of any one of a silanol group and an alkoxysilyl group, and a second functional group of at least one selected from the group consisting of an amino group, a thiol group, and an azido group, forming a catalyst layer on the catalyst adsorption layer, forming a metal film on the catalyst layer by an electroless plating method, and removing the metal film on the protrusions.

Abstract: According to an embodiment, a wireless apparatus includes an interposer including a conductive portion; a semiconductor chip mounted on a component mounting surface of the interposer; a sealing resin on the component mounting surface and sealing the semiconductor chip; a conductive layer covering a surface of the sealing resin and a side surface of the interposer and electrically connected to the conductive portion; a first slot-shaped aperture on a principal surface portion of the conductive layer facing the component mounting surface; a second slot-shaped aperture on a side surface portion of the conductive layer facing the side surface and continuing to the first aperture; and a slot-shaped aperture at the conductive portion and continuing to the second aperture. The first to third apertures function as an integrated slot antenna. A total length of the first aperture is longer than a total length of the third aperture.

Abstract: A semiconductor device includes a semiconductor chip having a terminal thereon, a lead frame for connection to an external device, a bonding wire connecting the terminal of the semiconductor chip and the lead frame. A mold resin layer encloses the semiconductor chip and the bonding wire, such that a portion of the lead frame extends out of the mold resin layer. A molecular bonding layer has a portion on a surface of the bonding wire and includes a first molecular portion covalently bonded to a material of the bonding wire and a material of the mold resin layer.

Abstract: According to an embodiment, a wireless apparatus includes an interposer substrate, a semiconductor chip, a nonconductive layer, and a conductive film. The interposer substrate includes a conductive portion. The semiconductor chip is mounted on a component mounting face of the interposer substrate. The nonconductive layer is provided on the component mounting face to seal the chip. The conductive film is configured to cover a surface of the nonconductive layer and a side of the interposer substrate and is electrically connected to the conductive portion. The film has a first slot aperture. The conductive portion has a second slot aperture connecting to the first slot aperture. The first and second slot apertures serve as an integrated slot antenna. The antenna has first and second portions. The first portion includes a boundary between the first and second slot apertures and has a width larger than a width of the second portion.

Abstract: A semiconductor device includes a substrate including, on a surface thereof, a first conductive pad and a first insulating layer formed around the first conductive pad, a semiconductor chip including, on a surface thereof, a second conductive pad and a second insulating layer around the second conductive pad, an intermediate layer formed between the substrate and the semiconductor chip, and including a conductive portion between the first and second conductive pads, and an insulating portion between the first and second insulating layers, and a molecular bonding layer formed between the substrate and the intermediate layer, and including at least one of a first molecular portion covalently bonded to a material of the first conductive pad and a material of the conductive portion, and a second molecular portion covalently bonded to a material of the first insulating layer and a material of the insulating portion.

Abstract: A semiconductor device includes a semiconductor chip covered with a resin layer, the semiconductor chip including an electrode pad at a surface of the semiconductor chop, a first insulating layer covering the surface of the semiconductor chip and having a via hole at a region corresponding to the electrode pad, a conductive layer extending along a surface of the electrode pad, a side surface of the via hole, and a planar surface the first insulating layer to a region beyond a planar region defined by the semiconductor chip. A molecular bonding layer is between the first insulating layer and the conductive layer and includes a molecular portion covalently bonded to a material of the first insulating layer and a material of the first insulating layer. A second insulating layer is on the first insulating layer and covering the conductive layer.

Abstract: A semiconductor device includes a semiconductor chip covered with a resin layer, the semiconductor chip including an electrode pad at a surface of the semiconductor chip, a first insulating layer covering the surface of the semiconductor chip and having a via hole at a region corresponding to the electrode pad, a conductive layer extending along a surface of the electrode pad, a side surface of the via hole, and a planar surface the first insulating layer, to a region beyond a planar region defined by the semiconductor chip, a second insulating layer on the first insulating layer and covering the conductive layer; and a molecular bonding layer formed between the first insulating layer and the second insulating layer and including a molecular portion covalently bonded to a material of the conductive layer and a material of the second insulating layer.

Abstract: A semiconductor device includes a base, a semiconductor chip on the base, a conductive bonding layer between a surface of the base and a surface of the semiconductor chip, the conductive bonding layer including a resin and a plurality of conductive particles contained in the resin, and a molecular bonding layer between the surface of the semiconductor chip and a surface of the conductive bonding layer, and including a molecular portion covalently bonded to a material of the semiconductor chip and a material of the conductive bonding layer.

Abstract: According to one embodiment, an electronic component includes a metal portion, a mold resin covering at least a part of the metal portion, and a molecular adhesion layer provided between a surface of the metal portion and the mold resin.

Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.