Abstract: Provided is an orally administrable vaccine against a coronavirus infectious disease. A transformed Bifidobacterium designed to display a part or a whole of a constituent protein of a coronavirus on a surface of the Bifidobacterium enables the provision of the orally administrable vaccine against a coronavirus infectious disease. The transformed Bifidobacterium designed to display a part or a whole of a constituent protein of a coronavirus on a surface of the Bifidobacterium can induce humoral immunity and cellular immunity through oral administration to suppress an increase in severity of pneumonia or the like even after viral infection.

Abstract: A method for manufacturing a semiconductor device includes mounting a first chip over a first area of a chip mounting section of a lead frame and mounting a second chip over a second area of the chip mounting section, wherein the second area is adjacent to the first area via the slit. The chip mounting section is disposed on a flat heating jig. First pads of the first chip are connected with second pads of the second chip via first wires, respectively, and the first pads are connected with leads of the lead frame via second wires, respectively. the first chip, the second chip, the first wires and the second wires are sealed with a resin such that a part of each of the leads is exposed from the resin, and each of the leads is then separated from the lead frame.

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: A method for manufacturing a semiconductor device includes mounting a first chip over a first area of a chip mounting section of a lead frame and mounting a second chip over a second area of the chip mounting section, wherein the second area is adjacent to the first area via the slit. The chip mounting section is disposed on a flat heating jig. First pads of the first chip are connected with second pads of the second chip via first wires, respectively, and the first pads are connected with leads of the lead frame via second wires, respectively, the first chip, the second chip, the first wires and the second wires are sealed with a resin such that a part of each of the leads is exposed from the resin, and each of the leads is then separated from the lead frame.

Abstract: A method for manufacturing a semiconductor device includes mounting a first chip over a first area of a chip mounting section of a lead frame and mounting a second chip over a second area of the chip mounting section, wherein the second area is adjacent to the first area via the slit. The chip mounting section is disposed on a flat heating jig. First pads of the first chip are connected with second pads of the second chip via first wires, respectively, and the first pads are connected with leads of the lead frame via second wires, respectively. the first chip, the second chip, the first wires and the second wires are sealed with a resin such that a part of each of the leads is exposed from the resin, and each of the leads is then separated from the lead frame.

Abstract: The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.

Abstract: A method for manufacturing a semiconductor device includes mounting a first chip over a first area of a chip mounting section of a lead frame and mounting a second chip over a second area of the chip mounting section, wherein the second area is adjacent to the first area via the slit. The chip mounting section is disposed on a flat heating jig. First pads of the first chip are connected with second pads of the second chip via first wires, respectively, and the first pads are connected with leads of the lead frame via second wires, respectively. the first chip, the second chip, the first wires and the second wires are sealed with a resin such that a part of each of the leads is exposed from the resin, and each of the leads is then separated from the lead frame.

Abstract: A semiconductor device comprises a microcomputer chip, an SDRAM which is disposed alongside the microcomputer chip and is thinner than the microcomputer chip, a tub, a plurality of inner leads and outer leads, first wires that connect pads of the microcomputer chip and pads of the SDRAM, and second wires which connect the pads of the microcomputer chip and the inner leads and which are disposed so as to bridge over the SDRAM and are formed with loops at positions higher than loops of the first wires. An interface circuit for a memory bus is connected only between the chips, without connecting to external terminals, and is closed within a package. Therefore, pins can be utilized for other functions correspondingly and a multi-pin configuration can be achieved. Further, the cost of an SIP (semiconductor device) can be reduced owing to the adoption of a frame type.

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.

Abstract: The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.

Abstract: The cost of a semiconductor device is to be reduced. An electrical connection between a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip is made through an inner lead portion of a lead disposed at a position around the first semiconductor chip and two bonding wires.

Abstract: A semiconductor device comprises a microcomputer chip, an SDRAM which is disposed alongside the microcomputer chip and is thinner than the microcomputer chip, a tub, a plurality of inner leads and outer leads, first wires that connect pads of the microcomputer chip and pads of the SDRAM, and second wires which connect the pads of the microcomputer chip and the inner leads and which are disposed so as to bridge over the SDRAM and are formed with loops at positions higher than loops of the first wires. An interface circuit for a memory bus is connected only between the chips, without connecting to external terminals, and is closed within a package. Therefore, pins can be utilized for other functions correspondingly and a multi-pin configuration can be achieved. Further, the cost of an SIP (semiconductor device) can be reduced owing to the adoption of a frame type.

Abstract: A semiconductor device is manufactured by adhering a fixing tape to plural leads of a lead frame comprising a copper alloy, mounting a semiconductor chip on a tab of the lead frame, electrically connecting the leads to electrodes a of the semiconductor chip via bonding wires, forming a sealing resin portion that seals the semiconductor chip, the tab, the bonding wires, the leads and the fixing tape, and cutting the lead frame. A binder layer of the fixing tape includes at least % by weight of an amine-curable epoxy resin as its main component, and does not include a phenol resin. The binder layer of the fixing tape further includes no more than % by weight of acrylonitrile butadiene rubber. By using this material for the binder layer of the fixing tape, migration of the copper in the leads is suppressed even when a degradation test with strict environmental degradation conditions is conducted.

Abstract: The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.

Abstract: The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: A semiconductor device comprises a microcomputer chip, an SDRAM which is disposed alongside the microcomputer chip and is thinner than the microcomputer chip, a tub, a plurality of inner leads and outer leads, first wires that connect pads of the microcomputer chip and pads of the SDRAM, and second wires which connect the pads of the microcomputer chip and the inner leads and which are disposed so as to bridge over the SDRAM and are formed with loops at positions higher than loops of the first wires. An interface circuit for a memory bus is connected only between the chips, without connecting to external terminals, and is closed within a package. Therefore, pins can be utilized for other functions correspondingly and a multi-pin configuration can be achieved. Further, the cost of an SIP (semiconductor device) can be reduced owing to the adoption of a frame type.

Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.