Patents by Inventor Akihiko Kameoka
Akihiko Kameoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6803258Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.Type: GrantFiled: May 23, 2002Date of Patent: October 12, 2004Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd., Hitachi Hokkai Semiconductor, Ltd.Inventors: Fujio Ito, Hiroaki Tanaka, Hiromichi Suzuki, Tokuji Toida, Takafumi Konno, Kunihiro Tsubosaki, Shigeki Tanaka, Kazunari Suzuki, Akihiko Kameoka
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Patent number: 6791182Abstract: At least a part of the inner leads 1a of a lead frame 1 is covered with a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating. The metal or alloy is selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of defects, such as leakage and shorting, due to ion migration can be prevented.Type: GrantFiled: March 25, 2002Date of Patent: September 14, 2004Assignee: Renesas Technology Corp.Inventors: Junpei Kusukawa, Ryozo Takeuchi, Toshiaki Ishii, Hiromichi Suzuki, Fujio Ito, Takafumi Nishita, Akihiko Kameoka, Masaru Yamada
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Publication number: 20040159922Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.Type: ApplicationFiled: February 13, 2004Publication date: August 19, 2004Inventors: Yoshinori Miyaki, Hiromichi Suzuki, Kazunari Suzuki, Takafumi Nishita, Fujio Ito, Kunihiro Tsubosaki, Akihiko Kameoka, Kunihiko Nishi
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Publication number: 20040126932Abstract: A method of manufacturing a semiconductor device is provided including preparing a lead frame having a plurality of leads, wherein the lead widths of the lead tips are smaller than the lead thickness of the tips. A plate is also prepared having a first portion and second portion on a main surface thereof, the second portion being located at the outer periphery of said first portion. A semiconductor chip having a semiconductor element and a plurality of electrodes is fastened to the first portion of the plate and the lead tips are fastened on the second portion of the plate. Bonding wires are then formed to electrically connect the lead tips and the electrodes of the semiconductor chip, and then the lead tips, the plate, the semiconductor chip and the bonding wires are sealed with a molding member.Type: ApplicationFiled: December 15, 2003Publication date: July 1, 2004Inventors: Fujio Ito, Hiroaki Tanaka, Hiromichi Suzuki, Tokuji Toida, Takafumi Konno, Kunihiro Tsubosaki, Shigeki Tanaka, Kazunari Suzuki, Akihiko Kameoka
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Patent number: 6692989Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.Type: GrantFiled: February 24, 2003Date of Patent: February 17, 2004Assignees: Renesas Technology Corporation, Hitachi ULSI Systems, Co., Ltd.Inventors: Yoshinori Miyaki, Hiromichi Suzuki, Kazunari Suzuki, Takafumi Nishita, Fujio Ito, Kunihiro Tsubosaki, Akihiko Kameoka, Kunihiko Nishi
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Patent number: 6673655Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.Type: GrantFiled: May 23, 2002Date of Patent: January 6, 2004Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd., Hitachi Hokkai Semiconductor, Ltd.Inventors: Fujio Ito, Hiroaki Tanaka, Hiromichi Suzuki, Tokuji Toida, Takafumi Konno, Kunihiro Tsubosaki, Shigeki Tanaka, Kazunari Suzuki, Akihiko Kameoka
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Publication number: 20030124770Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.Type: ApplicationFiled: February 24, 2003Publication date: July 3, 2003Inventors: Yoshinori Miyaki, Hiromichi Suzuki, Kazunari Suzuki, Takafumi Nishita, Fujio Ito, Kunihiro Tsubosaki, Akihiko Kameoka, Kunihiko Nishi
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Patent number: 6558980Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.Type: GrantFiled: April 11, 2001Date of Patent: May 6, 2003Inventors: Yoshinori Miyaki, Hiromichi Suzuki, Kazunari Suzuki, Takafumi Nishita, Fujio Ito, Kunihiro Tsubosaki, Akihiko Kameoka, Kunihiko Nishi
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Publication number: 20030052420Abstract: Described is a semiconductor device comprising a plurality of inner leads each made of copper or an alloy thereof; a heat sink made of copper or an alloy thereof, bonded to one end of each of a plurality of inner leads via an insulating adhesive layer and having a semiconductor element mounted on the heat sink via a metal wire; a plurality of metal wires each electrically connecting the semiconductor element and each of the plurality of inner leads; an encapsulating resin encapsulating the semiconductor element and the plurality of metal wires; and a plurality of outer leads protruded outside of the encapsulating resin and bent in the gullwing form. The encapsulating resin has been added with an additive forming a compound with an ionic impurity so that water at the peeling portion becomes near neutral, which prevents reaction and easy elution of copper, thereby preventing Cu migration.Type: ApplicationFiled: August 22, 2002Publication date: March 20, 2003Applicant: Hitachi, Ltd.Inventors: Hiromichi Suzuki, Akihiko Kameoka, Masaru Yamada, Takafumi Nishita, Fujio Ito, Junpei Kusukawa, Ryozo Takeuchi, Toshiaki Ishii
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Publication number: 20030042597Abstract: In a semiconductor device which is assembled by making use of a lead frame 1 with a heat radiation plate 3 in which the lead frame 1 and the heat radiation plate 3 made of copper or copper alloy are joined by an adhesive layer 2 formed on a surface of the heat radiation plate 3 and at least a part of the inner leads 1a of the lead frame 1 is applied of a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of inconveniences such as leakage and shorting due to ion migration can be prevented.Type: ApplicationFiled: March 25, 2002Publication date: March 6, 2003Inventors: Junpei Kusukawa, Ryozo Takeuchi, Toshiaki Ishii, Hiromichi Suzuki, Fujio Ito, Takafumi Nishita, Akihiko Kameoka, Masaru Yamada
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Publication number: 20020192871Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≧1.2 t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.Type: ApplicationFiled: July 26, 2002Publication date: December 19, 2002Inventors: Fujio Ito, Hiroaki Tanaka, Hiromichi Suzuki, Tokuji Toida, Takafumi Konno, Kunihiro Tsubosaki, Shigeki Tanaka, Kazunari Suzuki, Akihiko Kameoka
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Publication number: 20020137262Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.Type: ApplicationFiled: May 23, 2002Publication date: September 26, 2002Inventors: Fujio Ito, Hiroaki Tanaka, Hiromichi Suzuki, Tokuji Toida, Takafumi Konno, Kunihiro Tsubosaki, Shigeki Tanaka, Kazunari Suzuki, Akihiko Kameoka
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Publication number: 20020137261Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads. In a molding member-sealed semiconductor device wherein the semiconductor chip is fixed to the heat radiation plate, the tip thickness t′ of the inner leads is made less than the thickness t of the other portions of the inner leads secured to the heat radiation plate.Type: ApplicationFiled: May 23, 2002Publication date: September 26, 2002Inventors: Fujio Ito, Hiroaki Tanaka, Hiromichi Suzuki, Tokuji Toida, Takafumi Konno, Kunihiro Tsubosaki, Shigeki Tanaka, Kazunari Suzuki, Akihiko Kameoka
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Patent number: 6396142Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.Type: GrantFiled: August 6, 1999Date of Patent: May 28, 2002Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd., Hitachi Hokkai Semiconductor, Ltd.Inventors: Fujio Ito, Hiroaki Tanaka, Hiromichi Suzuki, Tokuji Toida, Takafumi Konno, Kunihiro Tsubosaki, Shigeki Tanaka, Kazunari Suzuki, Akihiko Kameoka
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Publication number: 20020043717Abstract: The cost of a semiconductor device is to be reduced. An electrical connection between a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip is made through an inner lead portion of a lead disposed at a position around the first semiconductor chip and two bonding wires.Type: ApplicationFiled: September 28, 2001Publication date: April 18, 2002Inventors: Toru Ishida, Tetsuharu Urawa, Fujio Ito, Tomoo Matsuzawa, Kazunari Suzuki, Akihiko Kameoka, Hiromichi Suzuki, Takuji Ide
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Patent number: 6291273Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.Type: GrantFiled: October 20, 1999Date of Patent: September 18, 2001Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.Inventors: Yoshinori Miyaki, Hiromichi Suzuki, Kazunari Suzuki, Takafumi Nishita, Fujio Ito, Kunihiro Tsubosaki, Akihiko Kameoka, Kunihiko Nishi
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Publication number: 20010010949Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.Type: ApplicationFiled: April 11, 2001Publication date: August 2, 2001Inventors: Yoshinori Miyaki, Hiromichi Suzuki, Kazunari Suzuki, Takafumi Nishita, Fujio Ito, Kunihiro Tsubosaki, Akihiko Kameoka, Kunihiko Nishi