Abstract: A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

Abstract: A metal base circuit substrate for an optical device, which effectively reflects the generated light and radiates heat from the substrate, comprises a metal base substrate made from aluminum or aluminum alloy that supports an electric circuit via an insulation layer, wherein the insulation layer is formed from a transparent cross-linked silicone body, and the electric circuit is formed directly on the insulation layer.

Abstract: An optical disk (10) of the present invention has a substrate (11) included a resin-impregnated paper, in which resin is impregnated into paper, or resin-coated paper, in which the paper surface is coated with a resin, and a recording layer (13) formed on at least one side of the substrate (11). This type of optical disk (10) has performance equal to that of conventional optical disks and has a minimal effect on the environment during disposal.

Abstract: An anisotropically electroconductive adhesive film is characterized by containing an electroconductive elastomer that traverses the thickness of the adhesive film and is insulated in the plane of the adhesive film comprising electrically insulating elastomer, and both the electroconductive elastomer and the electrically insulating elastomer have a modulus of elasticity at 150° C. that is no greater than 100 MPa. A method for producing the anisotropically electroconductive adhesive film is characterized by forming through holes across the thickness of the adhesive film comprising electrically insulating elastomer, thereafter filling the through holes with an electroconductive elastomer composition, and curing the electroconductive elastomer composition to form the electroconductive elastomer after filling the through holes.

Abstract: At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

Abstract: An optical disk (10) of the present invention comprises a substrate (11) included a biodegradable resin or polyolefin resin, a recording layer (13) provided on at least one side of the substrate (11), and a printing layer (15) provided on the other side of substrate (11), wherein recording layer (13) and printing layer (15) have a base material layer (recording layer base material, printing base material (21)) included a non-hydrophilic film. This type of optical disk (10) has performance equal to that of conventional optical disks, has a minimal effect on the environment during disposal and is able to suppress warping of the substrate.

Abstract: An anisotropically electroconductive adhesive film is characterized by containing an electroconductive elastomer that traverses the thickness of the adhesive film and is insulated in the plane of the adhesive film comprising electrically insulating elastomer, and both the electroconductive elastomer and the electrically insulating elastomer have a modulus of elasticity at 150° C. that is no greater than 100 MPa. A method for producing the anisotropically electroconductive adhesive film is characterized by forming through holes across the thickness of the adhesive film comprising electrically insulating elastomer, thereafter filling the through holes with an electroconductive elastomer composition, and curing the electroconductive elastomer composition to form the electroconductive elastomer after filling the through holes.

Abstract: A removable electronic device includes an enclosure and connector device, wherein the connector device has a connector device guide formed on each of two sides of the connector device. The enclosure has an enclosure guide, which is in a shape generally continuous with the connector device guide, formed on each of two sides thereof.

Abstract: At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

Abstract: A removable electronic device includes an enclosure and connector device, wherein the connector device has a connector device guide formed on each of two sides of the connector device. The enclosure has an enclosure guide, which is in a shape generally continuous with the connector device guide, formed on each of two sides thereof.

Abstract: A removable electronic device includes an enclosure and connector device, wherein the connector device has a connector device guide formed on each of two sides of the connector device. The enclosure has an enclosure guide, which is in a shape generally continuous with the connector device guide, formed on each of two sides thereof.

Abstract: A method for forming an electrically insulating thin film coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.

Abstract: This invention provides a recording/playback apparatus comprising a first unit which performs recording/playback processing of video data, a second unit which communicates with a terminal, and a control section for independently controlling power supplied to the first unit and power supplied to the second unit.

Abstract: A method for forming an electrically insulating thin film coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.

Abstract: The present invention provides an electronic device to facilitate the attachment to and removal from a main apparatus.

Abstract: At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

Abstract: A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused liquid 7 in which nitrogen N and carbon C are doped in polycrystalline silicon, by using the Czochralski method, and its nitrogen density is 1×1013-5×1015 atoms/cm3, and the carbon density is 5×1015-3×1016 atoms/cm3.

Abstract: An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.

Abstract: To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.

Abstract: An electrically insulating thin-film-forming resin composition comprising (A) a hydrogen silsesquioxane resin, (B) a solvent-soluble polymer, and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.