Abstract: The present invention provides a control method for a microscope apparatus, comprising: a first step for recognizing a type of a specimen retention member retaining a specimen; a second step for obtaining a first image including the whole image of a specimen retention member showing a picture of the entirety of the specimen retention member and an image of the specimen, and obtaining a second image including only the whole image of the specimen retention member in accordance with the type of the specimen retention member; and a third step for obtaining a macro observation image with a self fluorescence removed except for the specimen based on the first image and second image.

Abstract: A microscope includes an illuminating unit that includes an excitation light source emitting an excitation light, and a phosphor receiving the excitation light and emitting illumination light in a specific wavelength range. The illuminating unit illuminates a specimen with the illumination light. The microscope also includes an observation unit for observing the specimen illuminated by the illuminating unit.

Abstract: The object of the invention is to provide a semiconductor device having a nitride-based hetero-structure in which an epitaxial nitride film has a uniformly flat surface at a single molecule level, and a method of easily fabricating such a device. The object of the invention is achieved by providing a semiconductor device comprising a sapphire substrate whose c-surface is modified to be nitride-surfaced, GaN buffer layer, N polarity GaN layer, N polarity AlN layer, N polarity InN/InGaN multi-layered device structure, Al polarity AlN layer, and GaN cap layer.

Abstract: The object of the invention is to provide a semiconductor device having a nitride-based hetero-structure in which an epitaxial nitride film has a uniformly flat surface at a single molecule level, and a method of easily fabricating such a device. The object of the invention is achieved by providing a semiconductor device comprising a sapphire substrate whose c-surface is modified to be nitride-surfaced, GaN buffer layer, N polarity GaN layer, N polarity AlN layer, N polarity InN/InGaN multi-layered device structure, Al polarity AlN layer, and GaN cap layer.