Patents by Inventor Akihiro HIKASA
Akihiro HIKASA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942531Abstract: A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell.Type: GrantFiled: August 27, 2021Date of Patent: March 26, 2024Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Publication number: 20230343868Abstract: The semiconductor device includes a semiconductor layer which has a main surface, a switching device which is formed in the semiconductor layer, a first electrode which is arranged on the main surface and electrically connected to the switching device, a second electrode which is arranged on the main surface at an interval from the first electrode and electrically connected to the switching device, a first terminal electrode which has a portion that overlaps the first electrode in plan view and a portion that overlaps the second electrode and is electrically connected to the first electrode, and a second terminal electrode which has a portion that overlaps the second electrode in plan view and is electrically connected to the second electrode.Type: ApplicationFiled: September 9, 2021Publication date: October 26, 2023Applicant: ROHM CO., LTD.Inventor: Akihiro HIKASA
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Publication number: 20230197712Abstract: A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n+ emitter region and an n? drain region facing each other in the depth direction of the looped trench across a p-type base region; a p-type floating region formed on the side of the looped trench opposite to the FET structure; and an emitter connecting part that is electrically connected to the n+ emitter region and a trench gate provided in the same trench, the emitter connecting part and the trench gate being insulated from each other by the looped trench. The trench gate faces the FET structure, and the emitter connecting part faces the p-type floating region, across an insulating film.Type: ApplicationFiled: February 21, 2023Publication date: June 22, 2023Applicant: ROHM CO., LTD.Inventor: Akihiro HIKASA
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Patent number: 11610884Abstract: A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n+ emitter region and an n? drain region facing each other in the depth direction of the looped trench across a p-type base region; a p-type floating region formed on the side of the looped trench opposite to the FET structure; and an emitter connecting part that is electrically connected to the n+ emitter region and a trench gate provided in the same trench, the emitter connecting part and the trench gate being insulated from each other by the looped trench. The trench gate faces the FET structure, and the emitter connecting part faces the p-type floating region, across an insulating film.Type: GrantFiled: August 10, 2020Date of Patent: March 21, 2023Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Publication number: 20220165878Abstract: A semiconductor device includes a semiconductor layer having a main surface in which a trench is formed, a first-conductivity-type body region formed along a sidewall of the trench in a surface layer portion of the main surface of the semiconductor layer, a second-conductivity-type impurity region formed along the sidewall of the trench in a surface layer portion of the body region, a gate insulating layer formed on an inner wall of the trench, a gate electrode that is embedded in the trench and that faces the body region and the impurity region with the gate insulating layer placed between the gate electrode and the body region and between the gate electrode and the impurity region, a contact electrode that passes through the sidewall of the trench from inside the trench and is drawn out to the surface layer portion of the main surface of the semiconductor layer and is electrically connected to the body region and to the impurity region, and an embedded insulating layer that is interposed between the gate elType: ApplicationFiled: February 14, 2022Publication date: May 26, 2022Inventor: Akihiro HIKASA
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Patent number: 11282952Abstract: A semiconductor device includes a semiconductor layer having a main surface in which a trench is formed, a first-conductivity-type body region formed along a sidewall of the trench in a surface layer portion of the main surface of the semiconductor layer, a second-conductivity-type impurity region formed along the sidewall of the trench in a surface layer portion of the body region, a gate insulating layer formed on an inner wall of the trench, a gate electrode that is embedded in the trench and that faces the body region and the impurity region with the gate insulating layer placed between the gate electrode and the body region and between the gate electrode and the impurity region, a contact electrode that passes through the sidewall of the trench from inside the trench and is drawn out to the surface layer portion of the main surface of the semiconductor layer and is electrically connected to the body region and to the impurity region, and an embedded insulating layer that is interposed between the gate elType: GrantFiled: November 26, 2018Date of Patent: March 22, 2022Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Publication number: 20210391445Abstract: A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell.Type: ApplicationFiled: August 27, 2021Publication date: December 16, 2021Inventor: Akihiro HIKASA
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Patent number: 11133398Abstract: A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell.Type: GrantFiled: October 11, 2019Date of Patent: September 28, 2021Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Publication number: 20210126117Abstract: A semiconductor device of the present invention includes a semiconductor layer, a plurality of gate trenches formed in the semiconductor layer, a gate electrode filled via a gate insulating film in the plurality of gate trenches, an n+-type emitter region, a p-type base region, and an n?-type drift region disposed, lateral to each gate trench, in order in a depth direction of the gate trench from a front surface side of the semiconductor layer, a p+-type collector region disposed on a back surface side of the semiconductor layer with respect to the n?-type drift region, a plurality of emitter trenches formed between the plurality of gate trenches adjacent to each other, a buried electrode filled via an insulating film in the plurality of emitter trenches, and electrically connected with the n+-type emitter region, and a p-type floating region formed between the plurality of emitter trenches, and the p-type floating region is formed deeper than the p-type base region, and includes an overlap portion that goesType: ApplicationFiled: January 6, 2021Publication date: April 29, 2021Inventor: Akihiro HIKASA
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Patent number: 10923582Abstract: A semiconductor device is disclosed having a plurality of gate trenches formed on the surface thereof, each filled with a gate insulating film and a gate electrode. A transistor region is defined between adjacent gate trenches forming a pair, and includes an n+-type emitter region, a p-type base region, and an n?-type drift region disposed lateral to each gate trench in the pair, in order in a depth direction of the gate trench from a front surface side of the semiconductor layer. A p+-type collector region disposed on a back surface side of the semiconductor layer with respect to the n?-type drift region. A plurality of emitter trenches are formed one either side of each of the gate trenches in the pair of gate trenches.Type: GrantFiled: July 31, 2018Date of Patent: February 16, 2021Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Patent number: 10923571Abstract: A semiconductor device includes a semiconductor layer, having an active region, in which a functional element is formed, a first impurity region of a first conductivity type, formed at a surface layer portion of the semiconductor layer, a second impurity region of a second conductivity type, formed at a surface layer portion of the first impurity region and defining the active region, and a well region of the second conductivity type, formed along a periphery of the second impurity region at the surface layer portion of the first impurity region and having an inner side edge portion positioned at the second impurity region side, and an outer side edge portion positioned at an opposite side with respect to the second impurity region and having a second conductivity type impurity concentration lower than a second conductivity type impurity concentration of the inner side edge portion.Type: GrantFiled: February 20, 2020Date of Patent: February 16, 2021Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Publication number: 20200381542Abstract: A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is arranged in the front surface portion of the semiconductor layer, a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region with an active region being defined therebetween, a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other, a gate electrode that is embedded in the trench, an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region.Type: ApplicationFiled: August 19, 2020Publication date: December 3, 2020Inventor: Akihiro HIKASA
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Publication number: 20200373296Abstract: A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n+ emitter region and an n? drain region facing each other in the depth direction of the looped trench across a p-type base region; a p-type floating region formed on the side of the looped trench opposite to the FET structure; and an emitter connecting part that is electrically connected to the n+ emitter region and a trench gate provided in the same trench, the emitter connecting part and the trench gate being insulated from each other by the looped trench. The trench gate faces the FET structure, and the emitter connecting part faces the p-type floating region, across an insulating film.Type: ApplicationFiled: August 10, 2020Publication date: November 26, 2020Applicant: ROHM CO., LTD.Inventor: Akihiro HIKASA
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Patent number: 10818784Abstract: A semiconductor device according to the present invention includes a channel region of a first conductivity type, disposed at a front surface portion of a semiconductor layer, an emitter region of a second conductivity type, disposed at a front surface portion of the channel region, a drift region of the second conductivity type, disposed in the semiconductor layer at a rear surface side of the channel region, a collector region of the first conductivity type, disposed in the semiconductor layer at a rear surface side of the drift region, a gate trench, formed in the semiconductor layer, a gate electrode, embedded in the gate trench, and a convex region of the second conductivity type, projecting selectively from the drift region to the channel region side at a position separated from a side surface of the gate trench.Type: GrantFiled: February 4, 2019Date of Patent: October 27, 2020Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Patent number: 10777548Abstract: A method of manufacturing a semiconductor device includes forming a first trench and a second trench on a surface of a semiconductor substrate, the second trench being narrower than the first trench; forming an emitter connecting part and a trench gate that are separated from each other in the first trench and forming an embedded electrode in the second trench; forming a center insulating film in the first trench between the emitter connecting part and the trench gate; forming an interlayer insulating layer on the semiconductor substrate; forming a contact hole in the interlayer film at a location corresponding to the second trench; and forming an electrode material on the insulating layer so as to connect the electrode material and the embedded electrode in the second trench via the contact hole.Type: GrantFiled: August 28, 2018Date of Patent: September 15, 2020Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Publication number: 20200287044Abstract: A semiconductor device includes a semiconductor layer having a main surface in which a trench is formed, a first-conductivity-type body region formed along a sidewall of the trench in a surface layer portion of the main surface of the semiconductor layer, a second-conductivity-type impurity region formed along the sidewall of the trench in a surface layer portion of the body region, a gate insulating layer formed on an inner wall of the trench, a gate electrode that is embedded in the trench and that faces the body region and the impurity region with the gate insulating layer placed between the gate electrode and the body region and between the gate electrode and the impurity region, a contact electrode that passes through the sidewall of the trench from inside the trench and is drawn out to the surface layer portion of the main surface of the semiconductor layer and is electrically connected to the body region and to the impurity region, and an embedded insulating layer that is interposed between the gate elType: ApplicationFiled: November 26, 2018Publication date: September 10, 2020Inventor: Akihiro HIKASA
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Patent number: 10763344Abstract: A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is arranged in the front surface portion of the semiconductor layer, a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region with an active region being defined therebetween, a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other, a gate electrode that is embedded in the trench, an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region.Type: GrantFiled: September 10, 2018Date of Patent: September 1, 2020Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Publication number: 20200194561Abstract: A semiconductor device includes a semiconductor layer, having an active region, in which a functional element is formed, a first impurity region of a first conductivity type, formed at a surface layer portion of the semiconductor layer, a second impurity region of a second conductivity type, formed at a surface layer portion of the first impurity region and defining the active region, and a well region of the second conductivity type, formed along a periphery of the second impurity region at the surface layer portion of the first impurity region and having an inner side edge portion positioned at the second impurity region side, and an outer side edge portion positioned at an opposite side with respect to the second impurity region and having a second conductivity type impurity concentration lower than a second conductivity type impurity concentration of the inner side edge portion.Type: ApplicationFiled: February 20, 2020Publication date: June 18, 2020Inventor: Akihiro HIKASA
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Patent number: 10608087Abstract: A semiconductor device includes a semiconductor layer, having an active region, in which a functional element is formed, a first impurity region of a first conductivity type, formed at a surface layer portion of the semiconductor layer, a second impurity region of a second conductivity type, formed at a surface layer portion of the first impurity region and defining the active region, and a well region of the second conductivity type, formed along a periphery of the second impurity region at the surface layer portion of the first impurity region and having an inner side edge portion positioned at the second impurity region side, and an outer side edge portion positioned at an opposite side with respect to the second impurity region and having a second conductivity type impurity concentration lower than a second conductivity type impurity concentration of the inner side edge portion.Type: GrantFiled: March 30, 2017Date of Patent: March 31, 2020Assignee: ROHM CO., LTD.Inventor: Akihiro Hikasa
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Publication number: 20200044047Abstract: A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell.Type: ApplicationFiled: October 11, 2019Publication date: February 6, 2020Inventor: Akihiro HIKASA