Abstract: Embodiments of the invention generally provides an apparatus and method for heating substrates, comprising a heater disposed within a chamber, a plurality of heated supports movably disposed within the chamber to support at least two substrates thereon and a contamination collector disposed in communication with the chamber.

Abstract: An apparatus for supporting a substrate is provided. In one embodiment, a substrate support is provided having a body and an upper portion having a socket and ball adapted to minimize friction and/or chemical reactions between the substrate support and the substrate supported thereon. The substrate supports may be utilized in various chambers such as load locks and chambers having thermal processes.

Abstract: Generally, an end effector assembly for a substrate transfer robot is provided. In one embodiment, an end effector assembly for a substrate transfer robot includes an end effector having a plurality of metallic pads disposed thereon. A polymer pad is disposed on each metallic pad wherein a ratio of an exposed portion of an upper surface of the metallic pad to a top surface of the polymer pad is at least about 3.5 to 1. In another embodiment, an end effector assembly for a substrate transfer robot includes an end effector having a plurality of polymer pads disposed thereon. Each polymer pad includes a fluoropolymer coating disposed on at least a top surface of the polymer pad. The metallic pad and/or the coating allows the polymer pad to be at least temporarily utilized in applications above its normal operating temperature.

Abstract: An apparatus and method for processing substrates is provided, wherein the apparatus includes at least one substrate carrier for transporting a substrate within a processing environment. At least one temperature controlled plate positioned in the processing environment is selectively in communication with the at least one substrate carrier and is used to both transfer substrates from an external substrate shuttle to the substrate carrier in the processing environment and to regulate the temperature of the processing environment. At least one deposition device configured to deposit a selected film on the substrate and an annealing device are positioned proximate the at least one substrate carrier within the processing environment.

Abstract: In accordance with a first aspect, a susceptor is provided that includes (1) a supporting surface adapted to support a substrate, the supporting surface comprising a first material; and (2) a support frame encased within the first material, the support frame comprising a second material that has a lower coefficient of thermal expansion than the first material. The support frame is offset from a center of the susceptor toward the supporting surface. In accordance with a second aspect, a susceptor is provided that includes (1) a supporting surface adapted to support a substrate, the supporting surface comprising a first material; and (2) a support frame encased within the first material, the support frame comprising a second material that has a higher coefficient of thermal expansion than the first material. The support frame is offset from a center of the susceptor away from the supporting surface. Other aspects are also provided.

Abstract: Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.

Abstract: A sputter deposition apparatus and method includes perimeter magnets oriented an angle relative to the plane of the sputter target, either by magnetizing or by physically orienting the magnets at the chosen angle. The resulting magnetic flux extends radially outward, away from the central axis of the target, toward and beyond the target perimeter. This causes the return path of the flux to pass over the target surface more parallel to the plane of its sputtering surface. This spreads sputter erosion over a greater area of the target surface and mitigates development of sputtering grooves. Since target erosion is more uniform, more target material is used for sputter deposition, deterring waste. Each target can be used longer before the target material is penetrated, resulting in fewer target replacement cycles for a given volume of workpiece coating, raising the deposition chamber capacity factor.

Abstract: A significant change in the static angular position can be produced from a small physical displacement of the flexible member. The flexible member 12 in a magnetic head unit 95 is stressed for adjusting the static angular position. Simultaneously, the stressed areas 14 are irradiated by a laser beam LA.

Abstract: An apparatus and method for processing substrates is provided, wherein the apparatus includes at least one substrate carrier for transporting a substrate within a processing environment. At least one temperature controlled plate positioned in the processing environment is selectively in communication with the at least one substrate carrier and is used to both transfer substrates from an external substrate shuttle to the substrate carrier in the processing environment and to regulate the temperature of the processing environment. At least one deposition device configured to deposit a selected film on the substrate and an annealing device are positioned proximate the at least one substrate carrier within the processing environment.

Abstract: A sputter deposition apparatus and method having a sputtering target that is tilted and a shield that intercepts particles that may fall from the target so that the particles do not deposit on the workpiece. The invention permits the workpiece to be oriented horizontally. More specifically, the sputtering target is mounted higher than the workpiece position and is oriented at an angle of 30 to 60 degrees relative to the vertical axis. The shield occupies an area such that any vertical line extending vertically downward from the front surface of the target to a point on the workpiece intersects the shield above said point.

Abstract: Automated systems and methods for processing substrates are described. An automated processing system includes: a vacuum chamber; a substrate support located inside the vacuum chamber and constructed and arranged to support a substrate during processing; and a substrate alignment detector constructed and arranged to detect if the substrate is misaligned as the substrate is transferred into the vacuum chamber based upon a change in a physical condition inside the system. The substrate alignment detector may include a vibration detector coupled to the substrate support. A substrate may be transferred into the vacuum chamber. The position of the substrate may be recorded as it is being transferred into the vacuum chamber. Misalignment of the substrate with respect to the substrate support may be detected. The substrate may be processed. The processed substrate may be unloaded from the vacuum chamber. The position of the processed substrate may be recorded as it is being unloaded from the vacuum chamber.

Abstract: Automated systems and methods for processing substrates are described. An automated processing system includes: a vacuum chamber; a substrate support located inside the vacuum chamber and constructed and arranged to support a substrate during processing; and a substrate alignment detector constructed and arranged to detect if the substrate is misaligned as the substrate is transferred into the vacuum chamber based upon a change in a physical condition inside the system. The substrate alignment detector may include a vibration detector coupled to the substrate support. A substrate may be transferred into the vacuum chamber. The position of the substrate may be recorded as it is being transferred into the vacuum chamber. Misalignment of the substrate with respect to the substrate support may be detected. The substrate may be processed. The processed substrate may be unloaded from the vacuum chamber. The position of the processed substrate may be recorded as it is being unloaded from the vacuum chamber.

Abstract: The structure and method which improves the film thickness uniformity or thickness control when using magnetron sputtering by adjusting the distance between the magnetron or a portion of the magnetron and the sputtering target to provide an improvement in the film thickness uniformity. Shimmed rails, contoured rails, contoured surfaces, cam plates, and cam plate control followers are utilized to achieve an improvement in film thickness uniformity or thickness control due to anomalies in magnetic field as a magnetron assembly moves back and forth when sputtering substrates (utilized primarily for rectangularly shaped substrates).

Abstract: A sputtering target assembly is fabricated by diffusion bonding a target material plate to a backing plate. The plates are cleaned in a vacuum environment, and an interlayer is formed on one or more of the plates. The plates are then joined under heat and pressure, before an oxide layer can form on the joining surfaces of the plates. The plates may be sequentially processed through cleaning, interlayer deposition, and bonding chambers, all with vacuum environments, to form the finished part, or, a single chamber may be used to provide the cleaning, interlayer deposition and bonding functions.

Abstract: A sensor for measuring the temperature of a workpiece including a substrate, wafer, shield or other element in a semiconductor processing system. In the illustrated embodiment, the sensor has a heat shield to reflect away from the heat sensing element, heat from unwanted sources such as susceptors and heating cartridges which can adversely affect the accuracy of the measurement. In addition, the heat shield preferably has a small thermal mass for improved responsivity.

Abstract: A shield in a PVD vacuum processing chamber having a configuration which minimizes or eliminates particulates originating from flaking or peeling off from the shield and from arcing between the biased target and surrounding grounded pieces is disclosed. The shield has an "h" cross section with the lower arch of the "h" facing a heater assembly which heats the shield to a temperature approximately equivalent to the temperature of the sputter deposited material. The surface of the shield is polished to promote the release of H.sub.2 O molecules from its surface during the time when a vacuum is initially being pumped. The inside surface of the shield (facing a heater assembly) is treated to have a higher coefficient of surface emissivity than the outer surface to retain more energy and provide more efficient heating.

Abstract: A semiconductor wafer cooling pedestal has a wafer cooling surface which includes both an electrostatic chuck portion to hold the wafer securely to the pedestal during wafer cooling and a thermal transfer portion to cool the wafer. The entire wafer cooling surface of the pedestal is mirror finished to provide intimate contact between the pedestal cooling surface and the wafer, thereby providing efficient thermal transfer from the wafer to the pedestal without the need for placing a thermal transfer medium, such as Argon or other inert gas, between the wafer and the pedestal.

Abstract: A rail grinding apparatus for railroad rails has a grinding belt wrapped around motor-driven pulleys which are rotatably mounted on a frame. The frame is supported on the surface of a rail by rollers which bear the weight of the grinding apparatus. A noise guard surrounds the grinding belt to reduce noise.

Abstract: An apparatus for measuring the temperature of a wafer by a non-contact method includes a supporting device, at a specified position on which the wafer is placed horizontally. A thermocouple is provided with a heat collector at one end thereof. The heat collector is disposed near but in non-contacting relationship with the wafer at the specified position. A reflector capable of reflecting radiant heat is disposed near the heat collector and on the opposite side thereof from the wafer such that radiant heat from the wafer can be efficiently collected by the heat collector.