Patents by Inventor Akihiro Koyama
Akihiro Koyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9237994Abstract: A glass flake (10) having improved heat resistance and chemical resistance is formed from a glass base material satisfying, in mass %, 60?SiO2?75, 5<Al2O3?15, 3?CaO?20, 6?Na2O?20 and 9?(Li2O+Na2O+K2O)?13. When 9?(Li2O+Na2O+K2O)?13 is satisfied in mass %, the CaO content and the Na2O content are preferably set within the ranges of 5?CaO?20 and 6?Na2O?13, respectively. When 13?(Li2O+Na2O+K2O)?20 is satisfied in mass %, the CaO content and the Na2O content are preferably set within the ranges of 3?CaO?15 and 9?Na2O?20, respectively. The working temperature of the glass base material is preferably 1180° C.-1300° C. The temperature difference AT obtained by taking the devitrification temperature of the glass base material from the working temperature of the glass base material is preferably 0° C.-200° C. The glass transition temperature of the glass base material is preferably 550° C.-700° C. The acid resistance index ?W of the glass base material is preferably 0.05-1.5 mass %.Type: GrantFiled: August 26, 2009Date of Patent: January 19, 2016Assignee: NIPPON SHEET GLASS COMPANY, LIMITEDInventors: Kosuke Fujiwara, Akihiro Koyama
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Publication number: 20160003889Abstract: The present invention provides a method for manufacturing silicon carbide semiconductor apparatus including a testing step of testing a PN diode for the presence or absence of stacking faults in a relatively short time and an energization test apparatus. The present invention sets the temperature of a bipolar semiconductor element at 150° C. or higher and 230° C. or lower, causes a forward current having a current density of 120 [A/cm2] or more and 400 [A/cm2] or less to continuously flow through the bipolar semiconductor element, calculates, in a case where a forward resistance of the bipolar semiconductor element through which the forward current flows reaches a saturation state, the degree of change in the forward resistance, and determines whether the calculated degree of change is smaller than a threshold value.Type: ApplicationFiled: March 10, 2014Publication date: January 7, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Shoyu WATANABE, Akihiro KOYAMA, Shigehisa YAMAMOTO, Yukiyasu NAKAO, Kazuya KONISHI
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Patent number: 9212288Abstract: Disclosed is a glass flake (10) having improved heat resistance and improved chemical durability, which is composed of a glass base material satisfying, as expressed in mass %, 60?SiO2?70, 5?Al2O3?15, 1?MgO?10, 10?CaO?25 and 4<(Li2O+Na2O+K2O)<9. The temperature difference ?T obtained by taking the devitrification temperature of the glass base material from the working temperature thereof is preferably within the range of 0-200° C. The glass transition temperature of the glass base material is preferably within the range of 560-750° C. It is desirable that the value of ?W, which serves as an index for the acid resistance of the glass base material, is within the range of 0.05-1.2 mass %.Type: GrantFiled: May 28, 2009Date of Patent: December 15, 2015Assignee: NIPPON SHEET GLASS COMPANY, LIMITEDInventors: Kosuke Fujiwara, Akihiro Koyama
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Publication number: 20150218040Abstract: A substrate for p-Si TFT flat panel displays made of a glass having a high low-temperature-viscosity characteristic temperature and manufactured while avoiding erosion/wear of a melting tank during melting through direct electrical heating. The glass substrate comprises 52-78 mass % of SiO2, 3-25 mass % of Al2O3, 3-15 mass % of B2O3, 3-20 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-0.8 mass % of R2O, wherein R2O is total amount of Li2O, Na2O, and K2O, and 0-0.3 mass % of Sb2O3, and substantially does not comprise As2O3, wherein the mass ratio CaO/RO is equal to or greater than 0.65, the mass ratio (SiO2+Al2O3)/B2O3 is in a range of 7-30, and the mass ratio (SiO2+Al2O3)/RO is equal to or greater than 5. A related method involves melting glass raw materials blended to provide the glass composition; a forming step of forming the molten glass into a flat-plate glass; and an annealing step of annealing the flat-plate glass.Type: ApplicationFiled: April 14, 2015Publication date: August 6, 2015Applicant: AVANSTRATE INC.Inventors: Akihiro KOYAMA, Satoshi AMI, Manabu ICHIKAWA
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Patent number: 9096459Abstract: A flat panel display glass substrate includes a glass comprising, in mol %, 55-80% SiO2, 3-20% Al2O3, 3-15% B2O3, and 3-25% RO (the total amount of MgO, CaO, SrO, and BaO). The contents in mol % of SiO2, Al2O3, and B2O3 satisfy a relationship (SiO2+Al2O3)/(B2O3)=7.5-17. The strain point of the glass is 665° C. or more. The devitrification temperature of the glass is 1250° C. or less. The substrate has a heat shrinkage rate of 75 ppm or less. The rate of heat shrinkage is calculated from the amount of shrinkage of the substrate measured after a heat treatment which is performed at a rising and falling temperature rate of 10° C./min and at 550° C. for 2 hours by the rate of heat shrinkage (ppm)={the amount of shrinkage of the substrate after the heat treatment/the length of the substrate before the heat treatment}×106.Type: GrantFiled: June 29, 2012Date of Patent: August 4, 2015Assignee: AvanStrate Inc.Inventors: Akihiro Koyama, Satoshi Ami, Manabu Ichikawa
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Publication number: 20150191394Abstract: The disclosed cover glass is produced by etching a glass substrate that has been formed by a down-drawing process, and chemically strengthening the glass substrate to provide the glass substrate with a compressive-stress layer on the principal surfaces thereof. The glass substrate contains, as components thereof, 50% to 70% by mass of SiO2, 5% to 20% by mass of Al2O3, 6% to 30% by mass of Na2O, and 0% to less than 8% by mass of Li2O. The glass substrate may also contain 0% to 2.6% by mass of CaO, if necessary. The glass substrate has an etching characteristic in which the etching rate is at least 3.7 ?m/minute in an etching environment having a temperature of 22° C. and containing hydrogen fluoride with a concentration of 10% by mass.Type: ApplicationFiled: March 18, 2015Publication date: July 9, 2015Inventors: Akihiro KOYAMA, Mikiko MORISHITA, Satoshi AMI, Kazuaki HASHIMOTO, Tetsuo TAKANO
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Patent number: 9029280Abstract: A substrate for p-Si TFT flat panel displays made of a glass having a high low-temperature-viscosity characteristic temperature and manufactured while avoiding erosion/wear of a melting tank during melting through direct electrical heating. The glass substrate comprises 52-78 mass % of SiO2, 3-25 mass % of Al2O3, 3-15 mass % of B2O3, 3-20 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-0.8 mass % of R2O, wherein R2O is total amount of Li2O, Na2O, and K2O, and 0-0.3 mass % of Sb2O3, and substantially does not comprise As2O3, wherein the mass ratio CaO/RO is equal to or greater than 0.65, the mass ratio (SiO2+Al2O3)/B2O3 is in a range of 7-30, and the mass ratio (SiO2+Al2O3)/RO is equal to or greater than 5. A related method involves melting glass raw materials blended to provide the glass composition; a forming step of forming the molten glass into a flat-plate glass; and an annealing step of annealing the flat-plate glass.Type: GrantFiled: June 29, 2012Date of Patent: May 12, 2015Assignee: AvanStrate Inc.Inventors: Akihiro Koyama, Satoshi Ami, Manabu Ichikawa
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Patent number: 8932969Abstract: Provided are: a glass substrate for p-Si TFT flat panel displays that is composed of a glass having high characteristic temperatures in the low-temperature viscosity range, typified by the strain point and glass transition point, having a small heat shrinkage rate, and being capable of avoiding the occurrence of the problem regarding the erosion/wear of a melting tank at the time of melting through direct electrical heating; and a method for manufacturing same. The present glass substrate is composed of a glass comprising 52-78 mass % of SiO2, 3-25 mass % of Al2O3, 3-15 mass % of B2O3, 3-25 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-1 mass % of Fe2O3, and 0-0.3 mass % of Sb2O3, and substantially not comprising As2O3, the glass having a mass ratio (SiO2+Al2O3)/B2O3 in a range of 7-30 and a mass ratio (SiO2+Al2O3)/RO equal to or greater than 6.Type: GrantFiled: June 29, 2012Date of Patent: January 13, 2015Assignee: AvanStrate Inc.Inventors: Akihiro Koyama, Satoshi Ami, Manabu Ichikawa
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Patent number: 8895461Abstract: Provided are: a glass substrate for p-Si TFT flat panel displays that is composed of a glass having high characteristic temperatures in the low-temperature viscosity range, typified by the strain point and glass transition point, having a small heat shrinkage rate, and being capable of avoiding the occurrence of the problem regarding the erosion/wear of a melting tank at the time of melting through direct electrical heating; and a method for manufacturing same. The present glass substrate is composed of a glass comprising 52-78 mass % of SiO2, 3-25 mass % of Al2O3, 3-15 mass % of B2O3, 3-25 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-1 mass % of Fe2O3, and 0-0.3 mass % of Sb2O3, and substantially not comprising As2O3, the glass having a mass ratio (SiO2+Al2O3)/B2O3 in a range of 7-30 and a mass ratio (SiO2+Al2O3)/RO equal to or greater than 6.Type: GrantFiled: June 29, 2012Date of Patent: November 25, 2014Assignee: AvanStrate Inc.Inventors: Akihiro Koyama, Satoshi Ami, Manabu Ichikawa
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Publication number: 20140325837Abstract: A ground connection structure is a structure for collectively connecting, to a body of a vehicle, a plurality of grounding wires which are connected to respective electrical components installed in the vehicle. The ground connection structure includes: a connection box to which the plurality of grounding wires are connected; a grounding terminal part connected to the vehicle in an electrically conducting state; and an electrically conducting connection part having one end connected to the connection box and the other end connected to the grounding terminal part, the electrically conducting connection part connecting the connection box and the grounding terminal part in an electrically conducting manner. The electrically conducting connection part is made of a low-inductance material having low inductance.Type: ApplicationFiled: July 18, 2014Publication date: November 6, 2014Applicant: YAZAKI CORPORATIONInventors: Yukinari NAGANISHI, Akira BABA, Takashi ODAJIMA, Hirohito HABARA, Hideaki SAITOH, Takao OTA, Akihiro KOYAMA, Atsushi NAKATA
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Publication number: 20140327303Abstract: A ground connection structure is a structure for collectively connecting, to a body of a vehicle, a plurality of grounding wires which are connected to respective electrical components installed in the vehicle. The ground connection structure includes: a connection box to which the plurality of grounding wires are connected; a grounding terminal part connected to the vehicle in an electrically conducting state; and an electrically conducting connection part having one end connected to the connection box and the other end connected to the grounding terminal part, the electrically conducting connection part connecting the connection box and the grounding terminal part in an electrically conducting manner. The electrically conducting connection part is made of a low-inductance material having low inductance.Type: ApplicationFiled: July 18, 2014Publication date: November 6, 2014Applicant: YAZAKI CORPORATIONInventors: Yukinari NAGANISHI, Akira BABA, Takashi ODAJIMA, Hirohito HABARA, Hideaki SAITOH, Takao OTA, Akihiro KOYAMA, Atsushi NAKATA
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Publication number: 20140309098Abstract: A flat panel display glass substrate includes a glass comprising, in mol %, 55-80% SiO2, 3-20% Al2O3, 3-15% B2O3, and 3-25% RO (the total amount of MgO, CaO, SrO, and BaO). The contents in mol % of SiO2, Al2O3, and B2O3 satisfy a relationship (SiO2+Al2O3)/(B2O3)=7.5-17. The strain point of the glass is 665° C. or more. The devitrification temperature of the glass is 1250° C. or less. The substrate has a heat shrinkage rate of 75 ppm or less. The rate of heat shrinkage is calculated from the amount of shrinkage of the substrate measured after a heat treatment which is performed at a rising and falling temperature rate of 10° C./min and at 550° C. for 2 hours by the rate of heat shrinkage (ppm)={the amount of shrinkage of the substrate after the heat treatment/the length of the substrate before the heat treatment}×106.Type: ApplicationFiled: June 25, 2014Publication date: October 16, 2014Applicant: AvanStrate Inc.Inventors: Akihiro KOYAMA, Satoshi AMI, Manabu ICHIKAWA
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Patent number: 8853113Abstract: A flat panel display glass substrate according to the present invention includes a glass comprising, as expressed in mol %, 55-80% SiO2, 3-20% Al2O3, 3-15% B2O3, 3-25% RO (the total amount of MgO, CaO, SrO, and BaO), and substantially no As2O3 and Sb2O3. The devitrification temperature of the glass is 1250° C. or less. The glass substrate has a heat shrinkage rate of 75 ppm or less. The heat shrinkage rate is calculated from the amount of shrinkage of the glass substrate measured after a heat treatment which is performed at a temperature rising and falling rate of 10° C./min and at 550° C. for 2 hours by the heat shrinkage rate (ppm)={the amount of shrinkage of the glass substrate after the heat treatment/the length of the glass substrate before the heat treatment}×106.Type: GrantFiled: June 29, 2012Date of Patent: October 7, 2014Assignee: AvanStrate Inc.Inventors: Akihiro Koyama, Satoshi Ami, Manabu Ichikawa
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Patent number: 8840997Abstract: A cover glass having a compressive-stress layer on the principal surfaces thereof, and having a glass composition containing 50% to 70% by mole of SiO2, 3% to 20% by mole of Al2O3, 5% to 25% by mole of Na2O, more than 0% by mole and less than or equal to 2.5% by mole of Li2O, 0% to 5.5% by mole of K2O, and 0% to less than 3% by mole of B2O3. Also disclosed is a method for producing a cover glass which includes: (i) preparing molten glass by melting a glass raw material; (ii) forming the prepared molten glass into a plate-like shape by a down-draw process and thereby obtaining a glass substrate; and (iii) forming a compressive-stress layer on the surface of the glass substrate.Type: GrantFiled: December 28, 2011Date of Patent: September 23, 2014Assignees: AvanStrate Inc., Hoya CorporationInventors: Akihiro Koyama, Satoshi Ami, Kazuaki Hashimoto, Tetsuo Takano
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Publication number: 20140249018Abstract: A flat panel display glass substrate according to the present invention includes a glass comprising, as expressed in mol %, 55-80% SiO2, 3-20% Al2O3, 3-15% B2O3, 3-25% RO (the total amount of MgO, CaO, SrO, and BaO), and substantially no As2O3, and Sb2O3. The devitrification temperature of the glass is 1250° C. or less. The glass substrate has a heat shrinkage rate of 75 ppm or less. The heat shrinkage rate is calculated from the amount of shrinkage of the glass substrate measured after a heat treatment which is performed at a temperature rising and falling rate of 10° C./min and at 550° C. for 2 hours by the heat shrinkage rate (ppm)={the amount of shrinkage of the glass substrate after the heat treatment/the length of the glass substrate before the heat treatment}×106.Type: ApplicationFiled: May 13, 2014Publication date: September 4, 2014Applicant: AVANSTRATE INC.Inventors: Akihiro KOYAMA, Satoshi AMI, Manabu ICHIKAWA
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Publication number: 20140249019Abstract: A glass substrate for p-Si TFT flat panel displays that is composed of a glass comprising 52-78 mass % of SiO2, 3-25 mass % of Al2O3, 3-15 mass % of B2O3, 3-25 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-1 mass % of Fe2O3, and 0-0.3 mass % of Sb2O3, and substantially not comprising As2O3, the glass having a mass ratio (SiO2+Al2O3)/B2O3 in a range of 7-30 and a mass ratio (SiO2+Al2O3)/RO equal to or greater than 6. A method for manufacturing a glass substrate involves: a melting step of obtaining a molten glass by melting, by employing at least direct electrical heating, glass raw materials blended so as to provide the aforementioned glass composition; a forming step of forming the molten glass into a flat-plate glass; and an annealing step of annealing the flat-plate glass.Type: ApplicationFiled: May 15, 2014Publication date: September 4, 2014Applicant: AvanStrate Inc.Inventors: Akihiro KOYAMA, Satoshi AMI, Manabu ICHIKAWA
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Patent number: 8741794Abstract: A glass substrate for a display, which is formed of a glass having a light weight and having high refinability with decreasing environmental burdens, the glass comprising, by mass %, 50 to 70% of SiO2, 5 to 18% of B2O3, 10 to 25% of Al2O3, 0 to 10% of MgO, 0 to 20% of CaO, 0 to 20% of SrO, 0 to 10% of BaO, 5 to 20% of RO (in which R is at least one member selected from the group consisting of Mg, Ca, Sr and Ba), and over 0.20% but not more than 2.0% of R?2O (in which R? is at least one member selected from the group consisting of Li, Na and K), and containing, by mass %, 0.05 to 1.5% of oxide of metal that changes in valence number in a molten glass, and substantially containing none of As2O3, Sb2O3 and PbO.Type: GrantFiled: January 18, 2013Date of Patent: June 3, 2014Assignee: Avanstrate Inc.Inventors: Junji Kurachi, Akihiro Koyama, Yoichi Hachitani
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Publication number: 20140031192Abstract: A glass substrate for a display, which is formed of a glass having a light weight and having high refinability with decreasing environmental burdens, the glass comprising, by mass %, 50 to 70% of SiO2, 5 to 18% of B2O3, 10 to 25% of Al2O3, 0 to 10% of MgO, 0 to 20% of CaO, 0 to 20% of SrO, 0 to 10% of BaO, 5 to 20% of RO (in which R is at least one member selected from the group consisting of Mg, Ca, Sr and Ba), and over 0.20% but not more than 2.0% of R?2O (in which R? is at least one member selected from the group consisting of Li, Na and K), and containing, by mass %, 0.05 to 1.5% of oxide of metal that changes in valence number in a molten glass, and substantially containing none of As2O3, Sb2O3 and PbO.Type: ApplicationFiled: January 18, 2013Publication date: January 30, 2014Applicant: AVANSTRATE, INC.Inventors: Junji Kurachi, Akihiro Koyama, Yoichi Hachitani
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Publication number: 20130345041Abstract: Provided is a glass composition suitable for a glass substrate for a flat panel display such as a liquid crystal display. This glass composition has high thermal stability, and is substantially free of BaO but has a low devitrification temperature. It is suitable for the production of a glass substrate by a downdraw process. This glass composition contains, in terms of mass %: 54 to 62% of SiO2; 4 to 11% of B2O3; 15 to 20% of Al2O3; 2 to 5% of MgO; 0 to 7% of CaO; 0 to 13.5% of SrO; 0 to 1% of K2O; 0 to 1% of SnO2; and 0 to 0.2% of Fe2O3, and is substantially free of BaO. In this glass composition, the total content of alkaline earth metal oxides (MgO+CaO+SrO) is 10 to 18.5 mass %. The devitrification temperature of the glass composition is 1200° C. or lower.Type: ApplicationFiled: August 30, 2013Publication date: December 26, 2013Applicant: AvanStrate Inc.Inventors: Akihiro KOYAMA, Mikiko HASHIMOTO
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Patent number: 8575050Abstract: Provided is a glass composition suitable for a glass substrate for a flat panel display such as a liquid crystal display. This glass composition has high thermal stability, and is substantially free of BaO but has a low devitrification temperature. It is suitable for the production of a glass substrate by a downdraw process. This glass composition contains, in terms of mass %; 54 to 62% of SiO2; 4 to 11% of B2O3; 15 to 20% of Al2O3; 2 to 5% of MgO; 0 to 7% of CaO; 0 to 13.5% of SrO; 0 to 1% of K2O; 0 to 1% of SnO2; and 0 to 0.2% of Fe2O3, and is substantially free of BaO. In this glass composition, the total content of alkaline earth metal oxides (MgO+CaO+SrO) is 10 to 18.5 mass %. The devitrification temperature of the glass composition is 1200° C. or lower.Type: GrantFiled: December 15, 2010Date of Patent: November 5, 2013Assignee: AvanStrate Inc.Inventors: Akihiro Koyama, Mikiko Hashimoto