Abstract: An injection molding machine system includes an injection molding machine, a mold, a heating heater device, and a pressing device. When the mold is closed or clamped, two or more primary molding cavities and one or more secondary molding cavities are formed. Primary molded articles are molded through injection molding when injected into the primary molding cavities. The pair of primary molded articles are placed in the secondary molding cavity, bonding end surfaces are melted by the heating heater device, and the mold is closed or clamped. When the pair of primary molded articles are pressed together by the pressing device, the primary molded articles are fused to each other to form a molded article.

Abstract: A mold includes a guide pin configured to guide mold closing. The guide pin is housed in a guide pin housing hole formed in a parting line and is configured to be driven by a predetermined drive mechanism. The guide pin is configured to protrude its tip end from the parting line and to retract into the guide pin housing hole by the drive mechanism.

Abstract: The present invention provides a metal alkoxide compound represented by the following general formula (1), a thin-film-forming raw material containing the same, and a thin film production method of forming a metal-containing thin film using the raw material:

Abstract: Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300° C. or more and less than 450° C. to form the thin-film containing a hafnium atom on the surface of the substrate: wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms.

Abstract: Provided is a method of producing a thin-film containing a zirconium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a zirconium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 240° C. or more and 450° C. or less to form the thin-film containing a zirconium atom on the surface of the substrate: wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms, provided that a zirconium compound in which both of R1 and R2 represent hydrogen atoms is excluded.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.

Abstract: Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

Abstract: The present invention provides a method for producing an yttrium oxide-containing film by an atomic layer deposition method, including: a step (A) of introducing a raw material gas obtained by vaporizing a thin film-forming raw material containing tris(sec-butylcyclopentadienyl)yttrium into a processing atmosphere to deposit the tris(sec-butylcyclopentadienyl)yttrium on a substrate; and a step (B) of reacting the tris(sec-butylcyclopentadienyl)yttrium deposited on the substrate with a reactive gas containing a gas selected from the group consisting of oxygen plasma, ozone, ozone plasma, and mixtures thereof in the processing atmosphere to oxidize yttrium.

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

Abstract: A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

Abstract: Pyridine compounds of Formula (1) are provided: wherein R1, R2, X, Y and Het are defined. The pyridine compounds can be used to treat or prevent plant diseases.

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.).

Abstract: Pyridone compounds of formula (1) and salts thereof: wherein R1, R2, R3, X, Y1, Y2, Y3 and n are defined. The pyridone compounds can control plant diseases.

Abstract: An object of the invention is to provide compounds of formula (1) or salts thereof which are effective as agricultural and horticultural fungicides. In the formula, R1 represents, for example, a hydroxy group or a cyano group, R2, R3 and R4 are independent of one another and each represent, for example, a hydrogen atom or a halogen atom, R5 represents, for example, a hydrogen atom or a halogen atom, X represents an oxygen atom or a sulfur atom, Y represents, for example, a phenyl group or a pyridyl group, and the bond including the broken line represents a double bond or a single bond.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a magnesium compound represented by the following general formula (1): where R1 represents an isopropyl group, a sec-butyl group, or a tert-butyl group. A thin-film containing a magnesium atom is produced on a surface of a substrate with high productivity through use of the raw material.

Abstract: A pyridone compound represented by Formula (1): wherein R1, R2, X, Y and Z are defined. The pyridone compound can control plant diseases.