Abstract: A method for producing low-molecular-weight polytetrafluoroethylene which includes: (1) irradiating high-molecular-weight polytetrafluoroethylene with radiation to a dose of 250 kGy or higher substantially in the absence of oxygen to provide low-molecular-weight polytetrafluoroethylene having a melt viscosity at 380° C. of 1.0×102 to 7.0×105 Pa·s. Also disclosed is a powder containing the low-molecular-weight polytetrafluoroethylene, the powder being substantially free from any of perfluorooctanoic acid and salts thereof.

Abstract: Provided is a method for producing low-molecular-weight polytetrafluoroethylene which is less likely to generate C6-C14 perfluorocarboxylic acids and salts thereof. The disclosure relates to a method for producing low-molecular-weight polytetrafluoroethylene having a melt viscosity at 380° C. of 1.0×102 to 7.0×105 Pa·s. The method includes (1) irradiating high-molecular-weight polytetrafluoroethylene with radiation in a substantially oxygen-free state and decomposing the high-molecular-weight polytetrafluoroethylene into a low-molecular-weight component and (2) deactivating, in a substantially oxygen-free state, at least part of main-chain radicals and end radicals generated by the irradiation and providing the low-molecular-weight polytetrafluoroethylene.

Abstract: A method for producing a paper, which includes applying at least one of ionizing radiation and plasma to at least one of a paper base and a compound (A) selected from: a compound having a carbon-carbon unsaturated bond and containing no fluorine atom in a molecular structure, and a compound containing no fluorine atom in a molecular structure in which radicals are generated by irradiation of an electron beam to the compound, to introduce a layer formed from the compound (A) on a surface of the paper base.

Abstract: A molding material including a resin material that has a graft chain containing constituent units derived from a fluorine-containing compound and a non-fluorinated compound. The graft chain thereof may be formed, for example, using ionizing radiation.

Abstract: This disclosure provides a method for producing a hydrofluoroolefin (HFO) or fluoroolefin (FO), which is a target compound, with high selectivity, without requiring a high temperature and a catalyst in a synthesis process of the target compound. Specifically, the present disclosure provides a method for producing a hydrofluoroolefin or fluoroolefin having two, three, or four carbon atoms, comprising irradiating at least one starting material compound selected from the group consisting of hydrofluorocarbons having one or two carbon atoms and hydrofluoroolefin As having two or three carbon atoms with ionizing radiation and/or an ultraviolet ray having a wavelength of 300 nm or less, with the proviso that when the at least one starting material compound is the hydrofluoroolefin A, the resulting hydrofluoroolefin is different from the hydrofluoroolefin A.

Abstract: A method for producing low molecular weight polytetrafluoroethylene having a melt viscosity at 380° C. of 1.0×102 to 7.0×105 Pa·s. The method includes: (1) irradiating high molecular weight polytetrafluoroethylene with radiation in the presence of a substance capable of generating a free hydrogen atom and decomposing the high molecular weight polytetrafluoroethylene into a low molecular weight component; and (2) deactivating at least part of main-chain radicals and end radicals generated by the irradiation and providing the low molecular weight polytetrafluoroethylene. Also disclosed is a composition containing the low molecular weight polytetrafluoroethylene and a low molecular weight polytetrafluoroethylene.

Abstract: A method for producing low-molecular-weight polytetrafluoroethylene which includes: (1) irradiating high-molecular-weight polytetrafluoroethylene with radiation to a dose of 250 kGy or higher substantially in the absence of oxygen to provide low-molecular-weight polytetrafluoroethylene having a melt viscosity at 380° C. of 1.0×102 to 7.0×105 Pa·s. Also disclosed is a powder containing the low-molecular-weight polytetrafluoroethylene, the powder being substantially free from any of perfluorooctanoic acid and salts thereof.

Abstract: Provided is a method for producing low-molecular-weight polytetrafluoroethylene which is less likely to generate C6-C14 perfluorocarboxylic acids and salts thereof. The disclosure relates to a method for producing low-molecular-weight polytetrafluoroethylene having a melt viscosity at 380° C. of 1.0×102 to 7.0×105 Pa·s. The method includes (1) irradiating high-molecular-weight polytetrafluoroethylene with radiation in a substantially oxygen-free state and decomposing the high-molecular-weight polytetrafluoroethylene into a low-molecular-weight component and (2) deactivating, in a substantially oxygen-free state, at least part of main-chain radicals and end radicals generated by the irradiation and providing the low-molecular-weight polytetrafluoroethylene.

Abstract: A method for producing a paper, which includes applying at least one of ionizing radiation and plasma to at least one of a paper base and a compound (A) selected from: a compound having a carbon-carbon unsaturated bond and containing no fluorine atom in a molecular structure, and a compound containing no fluorine atom in a molecular structure in which radicals are generated by irradiation of an electron beam to the compound, to introduce a layer formed from the compound (A) on a surface of the paper base.

Abstract: A molding material including a resin material that has a graft chain containing constituent units derived from a fluorine-containing compound and a non-fluorinated compound. The graft chain thereof may be formed, for example, using ionizing radiation.

Abstract: A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer (12) on a substrate (11); an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.

Abstract: A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

Abstract: A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10?28 m3.

Abstract: A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer (12) on a substrate (11); an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.

Abstract: A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer 12 on a substrate 11; an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.

Abstract: A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

Abstract: A self-oscillation circuit includes a vibration unit having a vibrator, a positive feedback path which positively feeds back a signal based on vibration of the vibrator to the vibration unit, a negative feedback circuit which generates a pulse-width-modulated signal having a frequency lower than a vibration frequency of the vibrator, based on a comparison result between a value corresponding to an amplitude of the vibrator and a reference value, and a switch circuit which switches connection and disconnection of the positive feedback path to the vibration unit by the pulse-width-modulated signal.

Abstract: A self-oscillation circuit includes a vibration unit having a vibrator, a positive feedback path which positively feeds back a signal based on vibration of the vibrator to the vibration unit, a negative feedback circuit which generates a pulse-width-modulated signal having a frequency lower than a vibration frequency of the vibrator, based on a comparison result between a value corresponding to an amplitude of the vibrator and a reference value, and a switch circuit which switches connection and disconnection of the positive feedback path to the vibration unit by the pulse-width-modulated signal.