Abstract: A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10?28 m3.

Abstract: A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

Abstract: A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

Abstract: There are provided a microstructural material allowing a concavo-convex pattern of a mold to be imprinted thereon by hardening a pattern formative layer through an unprecedented method, and a fabrication method thereof. A PTFE dispersion liquid is used in a pattern formative layer 2a forming an imprint section 2, thereby allowing such pattern formative layer 2a formed on a concavo-convex pattern of a mold 5 to be hardened when irradiated with an ionizing radiation. Accordingly, the fabrication method of a microstructural material 1 of the present invention employs an imprinting method allowing the pattern formative layer 2a to be hardened through an ionizing radiation R, which is completely different from a thermal imprinting and an optical imprinting. That is, the pattern formative layer 2a can be hardened, and the concavo-convex pattern of the mold 5 can thus be imprinted thereon, through an unprecedented method.

Abstract: A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer 12 on a substrate 11; an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.

Abstract: An antenna device includes a feeding line having a first conductor and a second conductor and an antenna element having a conductive flat plate in which a slit is formed. The conductive flat plate has first and second sides opposite to each other and a third side. The antenna element is divided into an antenna pattern portion and a ground pattern portion via the slit. The slit is configured with a first slit portion apart from a center line towards the first side, a second slit portion apart from the center line towards the second side, a third slit portion coupling the first slit portion with the second slip portion, and a cutting portion coupling the third slit portion with the third side.

Abstract: An antenna device includes a feeding line having a first conductor and a second conductor and an antenna element having a conductive flat plate in which a slit is formed. The conductive flat plate has first and second sides opposite to each other and a third side. The antenna element is divided into an antenna pattern portion and a ground pattern portion via the slit. The slit is configured with a first slit portion apart from a center line towards the first side, a second slit portion apart from the center line towards the second side, a third slit portion coupling the first slit portion with the second slip portion, and a cutting portion coupling the third slit portion with the third side.

Abstract: There are provided a microstructural material allowing a concavo-convex pattern of a mold to be imprinted thereon by hardening a pattern formative layer through an unprecedented method, and a fabrication method thereof. A PTFE dispersion liquid is used in a pattern formative layer 2a forming an imprint section 2, thereby allowing such pattern formative layer 2a formed on a concavo-convex pattern of a mold 5 to be hardened when irradiated with an ionizing radiation. Accordingly, the fabrication method of a microstructural material 1 of the present invention employs an imprinting method allowing the pattern formative layer 2a to be hardened through an ionizing radiation R, which is completely different from a thermal imprinting and an optical imprinting. That is, the pattern formative layer 2a can be hardened, and the concavo-convex pattern of the mold 5 can thus be imprinted thereon, through an unprecedented method.

Abstract: Glove type input articles 7L and 7R are imaged by an imaging unit 51 of a cartridge 3 in order to calculate the positions thereof. Virtual screens are prepared respectively for the input articles 7L and 7R. Each virtual screen is divided into an immovable area, a straight area and a cross area, and determines the areas in which the current positions of the input articles 7L and 7R are located in the virtual screens, the origins of which are located in past positions of the input articles 7L and 7R as determined twice before. If the current position is located in the straight area, a straight punch is displayed; if the current position is located in the cross area, a cross punch is displayed; and if the current position is located in the immovable area, globes are displayed in accordance with the positions of the input articles 7L and 7R. The left and right hands are distinguished on the basis of positions predicted from the past positions of the input articles 7L and 7R.

Abstract: Unsintered poly(tetrafluoroethylene) resin feeds are treated with ionizing radiation in an absorbed dose of no more than 1,000 Gy at room temperature in air so that only the melting temperature of the resin feeds is shifted toward the lower end without changing the quantities of heat of fusion and crystallization.

Abstract: Unsintered poly(tetrafluoroethylene) resin feeds are treated with ionizing radiation in an absorbed dose of no more than 1,000 Gy at room temperature in air so that only the melting temperature of the resin feeds is shifted toward the lower end without changing the quantities of heat of fusion and crystallization.

Abstract: Unsintered poly(tetrafluoroethylene) resin feeds are treated with ionizing radiation in an absorbed dose of no more than 1,000 Gy at room temperature in air so that only the melting temperature of the resin feeds is shifted toward the lower end without changing the quantities of heat of fusion and crystallization.

Abstract: Unsintered poly(tetrafluoroethylene) resin feeds are treated with ionizing radiation in an absorbed dose of no more than 1,000 Gy at room temperature in air so that only the melting temperature of the resin feeds is shifted toward the lower end without changing the quantities of heat of fusion and crystallization.

Abstract: Fibers as a reinforcing substrate are impregnated with the particles of polytetrafluoroethylene and pressed into a shape at the melting point of polytetrafluoroethylene. Alternatively, the reinforcing substrate sandwiched between polytetrafluoroethylene sheets is pressed into a shape at the melting point of polytetrafluoroethylene. In either case, the shaped article is then exposed to an ionizing radiation in an oxygen-free atmosphere at the melting point of polytetrafluoroethylene. The inherent characteristics of the polytetrafluoroethylene, i.e., heat resistance, chemical resistance, abrasion resistance and lubricity, are retained and yet radiation resistance and resin transparency are imparted.

Abstract: Modified PTFE is produced by exposing a starting PTFE to an ionizing radiation for a total dose of at least 100 kGy in the absence of oxygen at a temperature not lower than the crystal melting point of the starting PTFE. The thus modified PTFE is improved in radiation resistance and has rubber characteristics.