Patents by Inventor Akihisa Iwasaki
Akihisa Iwasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240071774Abstract: A wiring forming method includes a loading step (Si), an etching step (S3), and a reducing step (S6). In the loading step (S1), a substrate having a metal wiring portion formed thereon is loaded into a chamber. In the etching step (S3), an oxidizing gas is supplied to the substrate to etch one part of the metal wiring portion. In the reducing step (S6), a reducing gas is supplied to the substrate to reduce an oxide film of the metal wiring portion formed by the etching step (S3).Type: ApplicationFiled: December 23, 2021Publication date: February 29, 2024Inventors: Masaki INABA, Akihisa IWASAKI
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Publication number: 20230256479Abstract: A substrate processing method includes a substrate holding step of holding a substrate having a front surface on which a metal is exposed, an inert gas replacing step of replacing an atmosphere around the front surface of the substrate with an inert gas by supplying an inert gas to a vicinity of the front surface of the substrate, an adjusting step of adjusting a pH of the rinsing liquid so as to form an inactive state in which the metal does not react with the rinsing liquid or so as to form a passive state by allowing the metal to react with the rinsing liquid, and a rinsing liquid supplying step of supplying the rinsing liquid whose pH has been adjusted to the front surface of the substrate after the atmosphere around the front surface of the substrate has been replaced with the inert gas.Type: ApplicationFiled: April 24, 2023Publication date: August 17, 2023Inventors: Akihisa IWASAKI, Hiroaki TAKAHASHI
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Patent number: 11660644Abstract: A substrate processing method includes a substrate holding step of holding a substrate having a front surface on which a metal is exposed, an inert gas replacing step of replacing an atmosphere around the front surface of the substrate with an inert gas by supplying an inert gas to a vicinity of the front surface of the substrate, an adjusting step of adjusting a pH of the rinsing liquid so as to form an inactive state in which the metal does not react with the rinsing liquid or so as to form a passive state by allowing the metal to react with the rinsing liquid, and a rinsing liquid supplying step of supplying the rinsing liquid whose pH has been adjusted to the front surface of the substrate after the atmosphere around the front surface of the substrate has been replaced with the inert gas.Type: GrantFiled: April 10, 2018Date of Patent: May 30, 2023Inventors: Akihisa Iwasaki, Hiroaki Takahashi
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Publication number: 20220267909Abstract: A substrate processing method processes a substrate which has a metal layer on a principal surface. The substrate processing method includes a metal oxide layer forming step in which an oxidizing fluid is supplied toward the principal surface of the substrate, thereby forming a metal oxide layer constituted of one atomic layer or several atomic layers on a surface layer of the metal layer and a metal oxide layer removing step in which an etching fluid containing at least one of water in a gaseous state and water in a mist state as well as a reactive gas that reacts with the metal oxide layer together with the water is supplied toward the principal surface of the substrate, thereby etching the metal oxide layer and selectively removing it from the substrate.Type: ApplicationFiled: February 24, 2022Publication date: August 25, 2022Inventors: Akihisa IWASAKI, Yasutoshi OKUNO, Masaki INABA
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Patent number: 11260436Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.Type: GrantFiled: May 28, 2020Date of Patent: March 1, 2022Inventors: Naoyuki Osada, Takahiro Yamaguchi, Eri Fujita, Akihisa Iwasaki, Ayumi Higuchi, Shota Iwahata
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Publication number: 20210276052Abstract: A substrate processing method includes a substrate holding step of holding a substrate having a front surface on which a metal is exposed, an inert gas replacing step of replacing an atmosphere around the front surface of the substrate with an inert gas by supplying an inert gas to a vicinity of the front surface of the substrate, an adjusting step of adjusting a pH of the rinsing liquid so as to form an inactive state in which the metal does not react with the rinsing liquid or so as to form a passive state by allowing the metal to react with the rinsing liquid, and a rinsing liquid supplying step of supplying the rinsing liquid whose pH has been adjusted to the front surface of the substrate after the atmosphere around the front surface of the substrate has been replaced with the inert gas.Type: ApplicationFiled: April 10, 2018Publication date: September 9, 2021Inventors: Akihisa IWASAKI, Hiroaki TAKAHASHI
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Patent number: 11018017Abstract: A substrate in which a low dielectric constant film is formed on a front surface thereof is processed. A densification step of densifying a surface layer portion of the low dielectric constant film to change to a densified layer is executed. Then, after a densified layer forming step, a repair liquid supplying step of supplying a repair liquid, for repairing the densified layer, to a front surface of the low dielectric constant film is executed.Type: GrantFiled: September 20, 2017Date of Patent: May 25, 2021Inventors: Ayumi Higuchi, Akihisa Iwasaki
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Patent number: 10892177Abstract: A substrate processing method which processes a substrate having a metal layer on a surface thereof includes a metal oxide layer forming step of forming a metal oxide layer formed of one atomic layer or several atomic layers on a surface layer of the metal layer by supplying an oxidizing fluid to the surface of the substrate, and a metal oxide layer removing step of selectively removing the metal oxide layer from the surface of the substrate by supplying an etchant to the surface of the substrate.Type: GrantFiled: August 31, 2018Date of Patent: January 12, 2021Assignee: SCREEN Holdings Co., Ltd.Inventors: Akihisa Iwasaki, Yuya Akanishi
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Publication number: 20200290101Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.Type: ApplicationFiled: May 28, 2020Publication date: September 17, 2020Inventors: Naoyuki OSADA, Takahiro YAMAGUCHI, Eri FUJITA, Akihisa IWASAKI, Ayumi HIGUCHI, Shota IWAHATA
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Patent number: 10755951Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.Type: GrantFiled: May 15, 2018Date of Patent: August 25, 2020Assignee: SCREEN Holdings Co., Ltd.Inventors: Kenji Izumoto, Takemitsu Miura, Kenji Kobayashi, Kazuhide Saito, Akihisa Iwasaki
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Patent number: 10717117Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.Type: GrantFiled: January 19, 2018Date of Patent: July 21, 2020Assignee: SCREEN Holdings Co., Ltd.Inventors: Naoyuki Osada, Takahiro Yamaguchi, Eri Fujita, Akihisa Iwasaki, Ayumi Higuchi, Shota Iwahata
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Patent number: 10622204Abstract: A substrate processing apparatus includes a spray nozzle that allows a plurality of liquid droplets to collide with a substrate held by a spin chuck, a liquid piping that supplies a mixed liquid of water and a chemical liquid to the spray nozzle, a first flow control valve and a second flow control valve each of which changes the concentration of the chemical liquid in the mixed liquid, and a controller that causes the liquid piping to supply the mixed liquid having a concentration of the chemical liquid determined in accordance with a substrate to be processed.Type: GrantFiled: November 17, 2016Date of Patent: April 14, 2020Assignee: SCREEN Holdings Co., Ltd.Inventors: Ayumi Higuchi, Akihisa Iwasaki
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Publication number: 20190189461Abstract: A substrate in which a low dielectric constant film is formed on a front surface thereof is processed. A densification step of densifying a surface layer portion of the low dielectric constant film to change to a densified layer is executed. Then, after a densified layer forming step, a repair liquid supplying step of supplying a repair liquid, for repairing the densified layer, to a front surface of the low dielectric constant film is executed.Type: ApplicationFiled: September 20, 2017Publication date: June 20, 2019Inventors: Ayumi HIGUCHI, Akihisa IWASAKI
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Publication number: 20190096721Abstract: A substrate processing method which processes a substrate having a metal layer on a surface thereof includes a metal oxide layer forming step of forming a metal oxide layer formed of one atomic layer or several atomic layers on a surface layer of the metal layer by supplying an oxidizing fluid to the surface of the substrate, and a metal oxide layer removing step of selectively removing the metal oxide layer from the surface of the substrate by supplying an etchant to the surface of the substrate.Type: ApplicationFiled: August 31, 2018Publication date: March 28, 2019Applicant: SCREEN Holdings Co., Ltd.Inventors: Akihisa IWASAKI, Yuya AKANISHI
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Publication number: 20180261471Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.Type: ApplicationFiled: May 15, 2018Publication date: September 13, 2018Inventors: Kenji IZUMOTO, Takemitsu MIURA, Kenji KOBAYASHI, Kazuhide SAITO, Akihisa IWASAKI
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Publication number: 20180236510Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.Type: ApplicationFiled: January 19, 2018Publication date: August 23, 2018Inventors: Naoyuki OSADA, Takahiro YAMAGUCHI, Eri FUJITA, Akihisa IWASAKI, Ayumi HIGUCHI, Shota IWAHATA
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Patent number: 9997382Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.Type: GrantFiled: September 2, 2016Date of Patent: June 12, 2018Assignee: SCREEN Holdings Co., Ltd.Inventors: Kenji Izumoto, Takemitsu Miura, Kenji Kobayashi, Kazuhide Saito, Akihisa Iwasaki
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Publication number: 20170236703Abstract: A substrate processing apparatus includes a spray nozzle that allows a plurality of liquid droplets to collide with a substrate held by a spin chuck, a liquid piping that supplies a mixed liquid of water and a chemical liquid to the spray nozzle, a first flow control valve and a second flow control valve each of which changes the concentration of the chemical liquid in the mixed liquid, and a controller that causes the liquid piping to supply the mixed liquid having a concentration of the chemical liquid determined in accordance with a substrate to be processed.Type: ApplicationFiled: November 17, 2016Publication date: August 17, 2017Inventors: Ayumi HIGUCHI, Akihisa IWASAKI
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Publication number: 20170053815Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.Type: ApplicationFiled: September 2, 2016Publication date: February 23, 2017Inventors: Kenji IZUMOTO, Takemitsu MIURA, Kenji KOBAYASHI, Kazuhide SAITO, Akihisa IWASAKI
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Publication number: 20160293447Abstract: A substrate processing apparatus (1) includes a processing part (11), a supply tank (12), and a recovery tank (13). In the supply tank (12), a processing liquid (91) circulates through a first circulation passage (211), and the temperature of the processing liquid is adjusted. The processing part performs etching processing on a substrate (9), using processing liquid from the first circulation passage. The used processing liquid is guided to the recovery tank and circulates through a second circulation passage (223). The second circulation passage includes a heater (224), a metal removal filter (231), and a metal concentration meter (233). The metal removal filter removes metal ions in the processing liquid. The metal concentration meter measures the metal ion concentration in the processing liquid, and the supply tank is replenished with appropriate processing liquid (91) from the recovery tank. This improves the utilization ratio of the processing liquid in etching processing.Type: ApplicationFiled: March 30, 2016Publication date: October 6, 2016Inventors: Akihisa IWASAKI, Ayumi HIGUCHI