Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

Abstract: An inkjet head nozzle plate formed from stainless steel in which a deformation in a nozzle inner wall or a nozzle tip is less, a method of manufacturing the inkjet head nozzle plate, and an inkjet head and an inkjet recording device which use the inkjet head nozzle plate. The inkjet head nozzle plate may be an inkjet head nozzle plate formed from at least stainless steel. The stainless steel is austenitic stainless steel in which a content ratio of a martensite phase is 5.4% or less.

Abstract: An inkjet head contains a silicon nozzle substrate having an ink channel surface and an ink ejection surface facing the channel surface, and having a nozzle penetrating from the channel surface to the ejection surface; a channel substrate bonded to the channel surface of the silicon nozzle substrate, and including an ink channel and a substrate body that forms the ink channel; and a liquid-repellent film provided on the ejection surface of the silicon nozzle substrate. The channel substrate includes a through channel that penetrates the substrate body so as to face the nozzle, n-number of individual circulation channels that communicate with the through channel, extend in a direction away from the nozzle, and have a portion overlapping the substrate body in a plan view. A positional relationship between each of the individual circulation channels and the nozzle satisfies a specific Expression 1.

Abstract: Provided is an inkjet head containing a nozzle plate having at least a substrate, wherein the nozzle plate has a liquid-repellent layer on an outermost surface of the substrate on an ink ejection surface side; a liquid-repellent layer base film is provided between the substrate and the liquid-repellent layer; and the liquid-repellent layer base film contains at least silicon (Si) and carbon (C), and having a maximum peak P of a binding energy of a Si2p orbital of a surface portion measured by X-ray photoelectron spectroscopy is in the range represented by the following Formula (1), Formula (1): 99.6 (eV)?P?101.9 (eV).

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract: Provided is an inkjet head containing: a substrate having a nozzle hole, and a nozzle plate having a liquid repellent layer on an outermost surface of the substrate on an ink discharge surface side, wherein the nozzle plate has a conductive layer between the substrate and the liquid repellent layer.

Abstract: An inkjet head includes a first and a second channel substrates. At least one of the first and the second channel substrates is formed of silicon. A bonding interface of the first and the second channel substrates is bonded via an adhesive layer. A protective film containing a compound having a Si—C bond is formed on: an ink channel surface formed of silicon among the first and the second channel substrates; and a surface of the channel substrate side formed of silicon in the adhesive layer.

Abstract: There is provided a nozzle plate of an inkjet head, the nozzle plate including: a first surface that is bonded to an upper layer substrate by an adhesive; and a second surface in which an opening of a nozzle that ejects an ink is provided. A step is formed at an edge of the first surface.

Abstract: To provide a semiconductor device in which a large current can flow. To provide a semiconductor device which can be driven stably at a high driving voltage. The semiconductor device includes a semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer and apart from each other in a region overlapping with the semiconductor layer, a first gate electrode and a second gate electrode with the semiconductor layer therebetween, a first gate insulating layer between the semiconductor layer and the first gate electrode, and a second gate insulating layer between the semiconductor layer and the second gate electrode. The first gate electrode overlaps with part of the first electrode, the semiconductor layer, and part of the second electrode. The second gate electrode overlaps with the semiconductor layer and part of the first electrode, and does not overlap with the second electrode.

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Abstract: To provide a semiconductor device in which a large current can flow. To provide a semiconductor device which can be driven stably at a high driving voltage. The semiconductor device includes a semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer and apart from each other in a region overlapping with the semiconductor layer, a first gate electrode and a second gate electrode with the semiconductor layer therebetween, a first gate insulating layer between the semiconductor layer and the first gate electrode, and a second gate insulating layer between the semiconductor layer and the second gate electrode. The first gate electrode overlaps with part of the first electrode, the semiconductor layer, and part of the second electrode. The second gate electrode overlaps with the semiconductor layer and part of the first electrode, and does not overlap with the second electrode.

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Abstract: Disclosed is a method of manufacturing, a metal nozzle plate, in which is formed a nozzle for discharging a liquid and that is to be bonded with adhesive to a head chip provided with an actuator for discharging the liquid, the method including: forming the nozzle in a metal plate-like member; forming a groove in the metal plate-like member; and performing exterior processing with respect to the nozzle plate.

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

Abstract: An inkjet head manufacturing method for an inkjet head that includes a head chip including: a nozzle ejecting ink; and a flow path substrate including an ink flow path which communicates with the nozzle and through which the ink flows, the method including: composite substrate manufacturing that is manufacturing a composite substrate including a plurality of regions which forms flow path substrates by being split; first protective film forming that is forming a first protective film on a surface of the composite substrate and an inner wall surface of the ink flow path; splitting that is splitting the composite substrate into the flow path substrates; and second protective film forming that is forming a second protective film on at least an exposed face in a split face of the flow path substrate generated in the splitting, the exposed face being exposed in a surface of the head chip.

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Abstract: Provided is an inkjet head containing a nozzle plate having at least a substrate, wherein the nozzle plate has a liquid-repellent layer on an outermost surface of the substrate on an ink ejection surface side; a liquid-repellent layer base film is provided between the substrate and the liquid-repellent layer; and the liquid-repellent layer base film contains at least silicon (Si) and carbon (C), and having a maximum peak P of a binding energy of a Si2p orbital of a surface portion measured by X-ray photoeletron spectroscopy is in the range represented by the following Formula (1), Formula (1): 99.6 (eV)?P?101.9 (eV).

Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.