Abstract: A power hairbrush which oscillates in operation with a frequency in the range of 55 Hz-120 Hz and an amplitude in the range of 8-20°, with a brushhead adapted to remove sebum and other material from the scalp and hair of a user, the brushhead including a plurality of lines or rows of filament tufts, wherein each filament in the filament tufts at its distal end is split into several portions. The brushhead further includes a plurality of lines of solid tuft members positioned adjacent to the lines of filament tufts. The filament tufts are approximately 1-3 mm taller than the solid tuft members.

Abstract: A power hairbrush which oscillates in operation with a frequency in the range of 55 Hz-120 Hz and an amplitude in the range of 8-20°, with a brushhead adapted to remove sebum and other material from the scalp and hair of a user, the brushhead including a plurality of lines or rows of filament tufts, wherein each filament in the filament tufts at its distal end is split into several portions. The brushhead further includes a plurality of lines of solid tuft members positioned adjacent to the lines of filament tufts. The filament tufts are approximately 1-3 mm taller than the solid tuft members.

Abstract: A power hairbrush which oscillates in operation with a frequency in the range of 55 Hz-120 Hz and an amplitude in the range of 8-20°, with a brushhead adapted to remove sebum and other material from the scalp and hair of a user, the brushhead including a plurality of lines or rows of filament tufts, wherein each filament in the filament tufts at its distal end is split into several portions. The brushhead further includes a plurality of lines of solid tuft members positioned adjacent to the lines of filament tufts. The filament tufts are approximately 1-3 mm taller than the solid tuft members.

Abstract: A power hairbrush which oscillates in operation with a frequency in the range of 55 Hz-120 Hz and an amplitude in the range of 8-20°, with a brushhead adapted to remove sebum and other material from the scalp and hair of a user, the brushhead including a plurality of lines or rows of filament tufts, wherein each filament in the filament tufts at its distal end is split into several portions. The brushhead further includes a plurality of lines of solid tuft members positioned adjacent to the lines of filament tufts. The filament tufts are approximately 1-3 mm taller than the solid tuft members.

Abstract: A microstructure inspecting apparatus for evaluating a characteristic of at least one microstructure having a movable section formed on a substrate, includes: a probe, which electrically connects with pads formed on the microstructure, for obtaining an electric signal of the microstructure; a plurality of nozzles, positioned in the vicinity of the movable section of the microstructure, for discharging or sucking a gas; a nozzle flow rate controller for controlling a flow rate of the gas discharged from or sucked into the plurality of nozzles; and an evaluation unit for detecting a displacement of the movable section of the microstructure by using the electric signal obtained through the probe, wherein the displacement is made by the gas discharged from or sucked into the plurality of nozzles, and evaluating the characteristic of the microstructure based on the detected result.

Abstract: A processing apparatus according to the present invention, which conditions a substrate placed on a table equipped with a heater by radiating an electron beam onto the substrate while heating the substrate with the heater, includes at least three projecting portions for holding the substrate at a predetermined distance from the table. This structure minimizes the extent of uneven heating of the substrate, which, in turn, enables uniform processing of the surface on the substrate.

Abstract: Installed in a vacuum chamber is a mounting table for supporting semiconductor wafer, which is a substrate to be treated, with an electron beam irradiation mechanism mounted on the ceiling of the vacuum chamber for generating electron beams. The mounting table is adapted to be vertically moved by a lifting/lowering device, allowing the distance between the electron beam irradiating mechanism and the semiconductor wafer to be set at a desired value. This makes it possible to perform a uniform satisfactory treatment over the entire surface of the substrate to be treated.

Abstract: Installed in a vacuum chamber is a mounting table for supporting semiconductor wafer, which is a substrate to be treated, with an electron beam irradiation mechanism mounted on the ceiling of the vacuum chamber for generating electron beams. The mounting table is adapted to be vertically moved by a lifting/lowering device, allowing the distance between the electron beam irradiating mechanism and the semiconductor wafer to be set at a desired value. This makes it possible to perform a uniform satisfactory treatment over the entire surface of the substrate to be treated.