Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

Abstract: A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Abstract: A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract: A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract: A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Abstract: A method for reducing a dielectric constant of a film includes (i) forming a dielectric film on a substrate; (ii) treating a surface of the film without film formation, and (III) curing the film. Step (i) includes providing a dielectric film containing a porous matrix and a porogen on a substrate, step (ii) includes, prior to or subsequent to step (iii), treating the dielectric film with charged species of hydrogen generated by capacitively-coupled plasma without film deposition to reduce a dielectric constant of the dielectric film, and step (iii) includes UV-curing the dielectric film to remove at least partially the porogen from the film.

Abstract: A method for reducing a dielectric constant of a film includes (i) forming a dielectric film on a substrate; (ii) treating a surface of the film without film formation, and (III) curing the film. Step (i) includes providing a dielectric film containing a porous matrix and a porogen on a substrate, step (ii) includes, prior to or subsequent to step (iii), treating the dielectric film with charged species of hydrogen generated by capacitively-coupled plasma without film deposition to reduce a dielectric constant of the dielectric film, and step (iii) includes UV-curing the dielectric film to remove at least partially the porogen from the film.

Abstract: In some embodiments, a low-k dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of through-silicon vias used in three-dimensional (3-D) integration of integrated circuits. A semiconductor workpiece having a via is provided. A dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of the via by chemical vapor deposition. Following the deposition of the dielectric film liner, conductive material is deposited into the via. The conductive material on the bottom of the via can be exposed by thinning the back of the semiconductor workpiece, thereby forming a through-silicon via. The semiconductor workpiece can form a stack with one or more additional semiconductor workpieces having vias filled with conductive material to form a 3-D integrated circuit. The conductive material electrically interconnects the integrated circuits at different levels of the stack.

Abstract: In some embodiments, a low-k dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of through-silicon vias used in three-dimensional (3-D) integration of integrated circuits. A semiconductor workpiece having a via is provided. A dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of the via by chemical vapor deposition. Following the deposition of the dielectric film liner, conductive material is deposited into the via. The conductive material on the bottom of the via can be exposed by thinning the back of the semiconductor workpiece, thereby forming a through-silicon via. The semiconductor workpiece can form a stack with one or more additional semiconductor workpieces having vias filled with conductive material to form a 3-D integrated circuit. The conductive material electrically interconnects the integrated circuits at different levels of the stack.

Abstract: A method of forming a low-k film containing silicon and carbon on a substrate by plasma CVD, includes: supplying gas of a precursor having a Si—R—O—R—Si bond into a reaction space in which a substrate is placed; and exciting the gas in the reaction space, thereby depositing a film on the substrate.

Abstract: A method of forming a fluorine-containing dielectric film on a substrate by plasma CVD, includes: introducing as a process gas a fluorinated carbon compound having at least two double bonds in its molecule and an unsaturated hydrocarbon compound into a reaction space wherein a substrate is placed; and applying RF power to the reaction space to deposit a fluorine-containing dielectric film on the substrate by plasma CVD.