Abstract: A management system includes a plurality of resources configured to be electrically connected to an external power supply, and a management device configured to manage the resources. The management device includes a planning unit and a management unit. The planning unit is configured to determine a power balancing plan of each of the resources by using first information on a use schedule of each of the resources and second information indicating a magnitude of an environmental load in a process of generating electric power to be supplied by the external power supply. The management unit is configured to manage the resources to cause each of the resources to operate according to the power balancing plan or a modified power balancing plan in power balancing of the external power supply.

Abstract: Described herein is a technique capable of acquiring, monitoring, and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Abstract: A battery includes a current collecting member connected to a power generating element housed in an outer casing with a lid, and a rivet placed outside the outer casing. The current collecting member includes a plate-shaped portion placed along the lid. The rivet includes a through part extending through the lid, and a contact part contacting a first surface of the plate-shaped portion. A part of a peripheral end portion of the contact part is joined to the first surface. An edge portion of a non-joined portion of the peripheral end portion, facing the first surface, includes a tapered surface generating a gap smaller at a position closer to the through part. The tapered surface has a maximum size of 0.1 mm or more in a direction from the peripheral end portion to the through part and 0.03 mm or more in a thickness direction of the peripheral end portion.

Abstract: An apparatus includes a conduit configured to circulate magnetic fluid, and a magnetic field generator that applies a magnetic field to the magnetic fluid. The conduit includes at least four areas of a first conduit area in which the magnetic fluid receives heat from a heating unit, a second conduit area from the first conduit area to a cooling unit, a third conduit area in which the magnetic fluid is cooled by the cooling unit, and a fourth conduit area from the cooling unit to the heating unit. When the apparatus is used, a volume of the magnetic fluid in one of the first to fourth conduit areas, in which a flow direction of the magnetic fluid coincides with a gravity direction, is larger than that of another conduit area, in which the flow direction of the magnetic fluid does not coincide with the gravity direction.

Abstract: According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe passing through a notch provided at least in a bottom plate of a substrate retainer inserted into a process chamber in a state where the substrate is mounted on the substrate retainer.

Abstract: A substrate liquid processing apparatus includes: at least one liquid pipe through which a processing liquid flows; a discharge nozzle configured to discharge the processing liquid supplied via the at least one liquid pipe; a valve mechanism configured to regulate a flow of the processing liquid in the at least one liquid pipe; and a liquid detection sensor configured to detect presence or absence of the processing liquid in the at least one liquid pipe, wherein in a state in which the valve mechanism is operating so that the processing liquid in the at least one liquid pipe is located at an upstream of a first pipe measurement site of the at least one liquid pipe, the liquid detection sensor detects the presence or absence of the processing liquid at the first pipe measurement site located at a first measurement point.

Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Abstract: Some embodiments of the present disclosure provide a technique for improving film thickness uniformity on a surface of a substrate and between substrates. According to one or more embodiments, a technique is provided that includes: a vaporizer configured to generate a source gas by vaporizing a liquid source; a tank in which the source gas ejected from the vaporizer is stored; a flow controller provided at a pipe connecting the vaporizer with the tank; a first valve provided at the pipe; a second valve provided downstream of the tank; a process chamber downstream of the second valve and to which the source gas is supplied; and a controller configured to be capable of controlling the first valve and the second valve to alternately and repeatedly perform accumulation of the source gas from the vaporizer into the tank and release of the source gas from the tank to the process chamber.

Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.

Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Abstract: There is provided a technique capable of reducing a corrosion of a furnace opening shutter. According to one aspect thereof, a substrate processing apparatus includes: a process vessel provided with an opening and a first sealing surface around the opening; and a furnace opening shutter provided with a second sealing surface facing the first sealing surface, and capable of closing the opening. The furnace opening shutter includes: a protective cover provided corresponding to an inner surface of the furnace opening shutter, facing the process vessel and greater than the opening; and a lid provided corresponding to an outer surface of the furnace opening shutter and supporting the protective cover. The second sealing surface is configured by an outer peripheral portion of the protective cover and the lid, and a purge gas is supplied to a gap between the first sealing surface and the second sealing surface.

Abstract: Described herein is a technique capable of suppressing the deposition of the residue and also possible to improve the vaporization efficiency. According to one aspect of the technique, there is provided a vaporizing system including: a vaporization chamber provided with a first end and a second end; a first fluid supplier connected to the vaporization chamber at the second end and configured to supply toward the first end a mixed fluid containing a first carrier gas and a liquid source mixed with each other; and a second fluid supplier connected to the vaporization chamber at the first end and configured to supply a second carrier gas such that the second carrier gas flows along an inner wall of the vaporization chamber when being supplied through the first end.

Abstract: Some embodiments of the present disclosure provide a technique capable of improving a film thickness uniformity on a surface of a substrate and between substrates. According to one or more embodiments, there is provided a technique that includes: a vaporizer configured to generate a source gas by vaporizing a liquid source; a tank in which the source gas ejected from the vaporizer is stored; a flow controller provided at a pipe connecting the vaporizer with the tank; a first valve provided at the pipe; a second valve provided downstream of the tank; a process chamber downstream of the second valve and to which the source gas is supplied; and a controller configured to be capable of controlling the first valve and the second valve to alternately and repeatedly perform accumulation of the source gas from the vaporizer into the tank and release of the source gas from the tank to the process chamber.

Abstract: A substrate liquid processing apparatus includes: at least one liquid pipe through which a processing liquid flows; a discharge nozzle configured to discharge the processing liquid supplied via the at least one liquid pipe; a valve mechanism configured to regulate a flow of the processing liquid in the at least one liquid pipe; and a liquid detection sensor configured to detect presence or absence of the processing liquid in the at least one liquid pipe, wherein in a state in which the valve mechanism is operating so that the processing liquid in the at least one liquid pipe is located at an upstream of a first pipe measurement site of the at least one liquid pipe, the liquid detection sensor detects the presence or absence of the processing liquid at the first pipe measurement site located at a first measurement point.

Abstract: A controller is configured to control a liquid supply to change a landing position of a liquid on a surface of a substrate continuously by discharging the liquid toward the surface of the substrate from a first liquid discharge nozzle while moving the first liquid discharge nozzle. The controller is also configured to derive discharge position deviation information of the liquid supply by comparing first temperature information based on a spot temperature measured by a temperature measurement device when the first liquid discharge nozzle is moved along a first nozzle path and second temperature information based on the spot temperature measured by the temperature measurement device when the first liquid discharge nozzle is moved along a second nozzle path which is different from the first nozzle path.

Abstract: A processing apparatus includes a chamber configured to accommodate a substrate to be processed, a nozzle provided in the chamber and configured to supply a processing solution to the substrate, a flow rate measuring part configured to measure a flow rate of the processing solution supplied to the nozzle, a flow path opening/closing part configured to open and close a supply flow path of the processing solution to the nozzle, and a controller configured to output a close signal causing the flow path opening/closing part to perform a closing operation that closes the supply flow path. The controller is configured to detect an operation abnormality of the flow path opening/closing part based on an accumulated amount of the flow rate measured by the flow rate measuring part after outputting the close signal.

Abstract: According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe passing through a notch provided at least in a bottom plate of a substrate retainer inserted into a process chamber in a state where the substrate is mounted on the substrate retainer.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.