Abstract: A method for manufacturing an injection molding material includes: an imparting step of imparting a water-soluble high molecular weight material to a cellulose raw material; a defibrating step of defibrating the cellulose raw material to which the water-soluble high molecular weight material is imparted to form a defibrated material; and a mixing step of mixing the defibrated material with a starch in a gas atmosphere.

Abstract: A method for manufacturing an injection molding material includes a mixing step of mixing in a gas atmosphere, a fiberized cellulose; a hydrophobic biodegradable material; and a starch.

Abstract: A fiber structural body includes cellulose fibers and a binding material which binds the cellulose fibers, the cellulose fibers are contained at a content of 50.0 to 70.0 percent by mass with respect to the fiber structural body, and the binding material is a natural component.

Abstract: The light-emitting element of an embodiment outputs a clear optical image while suppressing light output efficiency reduction, and includes a substrate, a light-emitting unit, and a bonding layer. The light-emitting unit has a semiconductor stack, including a phase modulation layer, between first and second electrodes. The phase modulation layer has a base layer and modified refractive index regions, and includes a first region having a size including the second electrode, and a second region. Each gravity center of the second region's modified refractive index region is arranged by an array condition. The light from the stack is a single beam, and regarding a first distance from the substrate to the stack's front surface and a second distance from the substrate to the stack's back surface, a variation amount of the first distance along a direction on the substrate is smaller than a variation amount of the second distance.

Abstract: A sheet-like filter includes a first fiber that is mainly composed of polylactic acid, and a second fiber that is mainly composed of polylactic acid and has a core portion and a cover layer covering the core portion, in which the cover layer functions as a binder for fusing the first fiber and the second fiber. In addition, when a melting point of the core portion is denoted by Tm1 and a melting point of the cover layer is denoted by Tm2, it may be Tm2<Tm1.

Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.

Abstract: An ink absorber includes: an ink absorbing member that is capable of absorbing ink; an accommodation section that accommodates the ink absorbing member; and a detachment structure section that detaches the ink absorbing member from the accommodation section. In the ink absorber, it is preferable that the accommodation section have a bottom section and side wall sections standing up from the bottom section, that inclined surfaces inclined relative to the bottom section be formed inside the side wall sections, and that the detachment structure section be configured with the inclined surfaces.

Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.

Abstract: A semiconductor device includes a substrate; a transistor formed on a surface of the substrate; a first insulating film formed above the transistor; a second semiconductor film formed on the first semiconductor film; a third semiconductor film formed on the second semiconductor film; a fourth semiconductor film formed on the third semiconductor film; and a ferroelectric capacitor formed on the fourth insulating film, wherein a hydrogen permeability of the third insulating film is higher than a hydrogen permeability of the first insulating film, and a hydrogen permeability and an oxygen permeability of the second insulating film and of the fourth insulating film are higher than the hydrogen permeability and an oxygen permeability of the first insulating film and of the third insulating film.

Abstract: An ink absorbing member accommodation container includes: an accommodation container that has an accommodation space for accommodating an ink absorbing member containing water-absorbable resin capable of absorbing ink inside the accommodation container and that includes an inlet port through which the ink flows into the accommodation space; and a flying preventing mechanism that prevents a constituent material of the ink absorbing member from flying from the inlet port to an outside of the accommodation container.

Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface, a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction, and an optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface.

Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.

Abstract: This underwater device is twin-motor underwater floating-type power generation device that is provided with: a device main body that is equipped with a pair of pods that have a turbine, and with a connecting beam that connects these pods together in parallel with each other; a sinker; and tether cables that tether the device main body to the seabed via this sinker. The respective turbines of the pods are each provided with variable pitch turbine blades. This device is also provided with a depth meter that detects deviation in posture in the roll direction that is generated in the pair of pods, and a posture controller that controls the pitch of the variable pitch turbine blades of the respective turbines so as to nullify any deviation in posture in the roll direction that has been generated in the pair of pods and has been detected by the depth meter.

Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).

Abstract: An ink absorbing member accommodation container includes: an accommodation container that has an accommodation space for accommodating an ink absorbing member containing water-absorbable resin capable of absorbing ink inside the accommodation container and that includes an inlet port through which the ink flows into the accommodation space; and a flying preventing mechanism that prevents a constituent material of the ink absorbing member from flying from the inlet port to an outside of the accommodation container.

Abstract: An ink absorber includes: an ink absorbing member that is capable of absorbing ink; an accommodation section that accommodates the ink absorbing member; and a detachment structure section that detaches the ink absorbing member from the accommodation section. In the ink absorber, it is preferable that the accommodation section have a bottom section and side wall sections standing up from the bottom section, that inclined surfaces inclined relative to the bottom section be formed inside the side wall sections, and that the detachment structure section be configured with the inclined surfaces.