Patents by Inventor Akio Kawabata
Akio Kawabata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090269921Abstract: An electronic device having a structure of an ohmic connection to a carbon element cylindrical structure body, wherein a metal material is positioned inside the junction part of a carbon element cylindrical structure body joined to a connection objective and the carbon element cylindrical structure body and the connection objective are connected by an ohmic contact. Methods for producing such an electronic device are also disclosed. Further, a method for growing a carbon nanotube is disclosed.Type: ApplicationFiled: July 8, 2009Publication date: October 29, 2009Applicant: FUJITSU LIMITEDInventors: Akio Kawabata, Mizuhisa Nihei
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Publication number: 20090136412Abstract: Carbon atoms are fed to a catalytic metal particle 10 having a atomic arrangement of triangular lattices in a round (or partly round) of a side wall, and a graphen sheet 18 having a six-membered structure reflecting the atomic arrangement of the triangular lattices is consecutively formed by the metal catalyst, whereby a tubular structure of the carbon atoms is formed. Thus, the chirality of the tubular structure can be controlled by the growth direction of the graphen sheet with respect to the direction of the triangular lattices, and the diameter of the tubular structure can be controlled by the size of the catalytic metal particle.Type: ApplicationFiled: August 1, 2007Publication date: May 28, 2009Applicants: FUJITSU LIMITED, MEIJO UNIVERSITY EDUCATIONAL FOUNDATIONInventors: Yuji Awano, Shigeya Naritsuka, Akio Kawabata, Takahiro Maruyama
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Patent number: 7504570Abstract: A method of manufacturing carbon nanotubes that is capable of growing carbon nanotubes on a substrate by a CVD method without giving rise to residual carbon impurities is provided. The method of manufacturing carbon nanotubes according to the present invention is a method in which carbon nanotubes are grown on a substrate by a chemical vapor deposition (CVD) process using a reaction gas containing a compound for the carbon source, wherein a compound having a carbon skeleton and a functional group which is effective for removing carbon impurities that deposit during the growth of carbon nanotubes is used as the compound for the carbon source.Type: GrantFiled: June 20, 2005Date of Patent: March 17, 2009Assignee: Fujitsu LimitedInventor: Akio Kawabata
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Publication number: 20090035209Abstract: According to a method of manufacturing carbon nanotubes, minute concavities and convexities are formed at a surface of a substrate, a catalyst metal layer having a predetermined film thickness is formed on the surface having the concavities and convexities, the substrate is subject to a heat treatment at a predetermined temperature to change the catalyst metal layer into a plurality of isolated fine particles. The catalyst metal fine particles have a uniform particle diameter and uniform distribution. Then, the substrate supporting the plurality of fine particles is placed in a carbon-containing gas atmosphere to grow carbon nanotubes on the catalyst metal fine particles by a CVD method using the carbon-containing gas. The carbon nanotubes can be formed to have a desired diameter and a desired shell number with superior reproducibility.Type: ApplicationFiled: September 29, 2008Publication date: February 5, 2009Applicant: FUJITSU LIMITEDInventors: Daiyu KONDO, Akio KAWABATA, Shintaro SATO, Taisuke IWAI, Mizuhisa NIHEI
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Publication number: 20090016951Abstract: An aggregate structure of carbon fibers, organized by a plurality of carbon fibers, includes, an aggregate of the carbon fibers aligned in a lengthwise direction, in which a density of the carbon fibers at one side end is different from a density of the carbon fibers at the other side end.Type: ApplicationFiled: September 24, 2008Publication date: January 15, 2009Applicant: FUJITSU LIMITEDInventors: Akio KAWABATA, Shintaro SATO
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Publication number: 20080260618Abstract: When growing carbon nanotubes, a substrate is delivered into a thermal CVD chamber whose internal temperature is a room temperature, and a mixed gas of an inert gas and a raw gas is introduced in the inside thereof. After a pressure inside of the chamber is stabilized at 1 kPa, the temperature in the chamber is raised to 510° C. in 1 minute. As a result, the carbon nanotubes start to grow linearly from the respective catalytic particles without any fusion of each of the catalytic particles. Subsequently, the temperature and an atmosphere are maintained for about 30 minutes. Once the carbon nanotubes start to grow, surfaces of the catalytic particles are covered by carbon, so that any fusion of each of the catalytic particles can be avoided even during the maintenance for about 30 minutes.Type: ApplicationFiled: June 26, 2008Publication date: October 23, 2008Applicant: FUJITSU LIMITEDInventor: Akio KAWABATA
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Publication number: 20080241493Abstract: With TiN being a base material, TiN fine particles are deposited on a silicone substrate by, for example, a laser ablation method so that diameters of the TiN fine particles are about 3 nm, and thereafter, Co fine particles are deposited on the silicon substrate on which the TiN fine particles are deposited, by, for example, the laser ablation method so that sizes of the Co fine particles are equal to or smaller than sizes of the fine particles of the TiN fine particles, here about 1 nm in diameter.Type: ApplicationFiled: February 29, 2008Publication date: October 2, 2008Applicant: FUJITSU LIMITEDInventor: Akio Kawabata
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Patent number: 7417320Abstract: A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.Type: GrantFiled: July 14, 2005Date of Patent: August 26, 2008Assignee: Fujitsu LimitedInventors: Akio Kawabata, Mizuhisa Nihei, Masahiro Horibe, Shintaro Sato, Daiyu Kondo, Yuji Awano
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Publication number: 20080105982Abstract: A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.Type: ApplicationFiled: July 3, 2006Publication date: May 8, 2008Applicant: FUJITSU LIMITEDInventors: Masahiro Horibe, Akio Kawabata, Mizuhisa Nihei
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Patent number: 7368823Abstract: A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.Type: GrantFiled: July 3, 2006Date of Patent: May 6, 2008Assignee: Fujitsu LimitedInventors: Masahiro Horibe, Akio Kawabata, Mizuhisa Nihei
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Publication number: 20070003471Abstract: A method of manufacturing carbon nanotubes that is capable of growing carbon nanotubes on a substrate by a CVD method without giving rise to residual carbon impurities is provided. The method of manufacturing carbon nanotubes according to the present invention is a method in which carbon nanotubes are grown on a substrate by a chemical vapor deposition (CVD) process using a reaction gas containing a compound for the carbon source, wherein a compound having a carbon skeleton and a functional group which is effective for removing carbon impurities that deposit during the growth of carbon nanotubes is used as the compound for the carbon source.Type: ApplicationFiled: June 20, 2005Publication date: January 4, 2007Applicant: FUJITSU LIMITEDInventor: Akio Kawabata
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Publication number: 20060290003Abstract: A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.Type: ApplicationFiled: July 14, 2005Publication date: December 28, 2006Applicant: FUJITSU LIMITEDInventors: Akio Kawabata, Mizuhisa Nihei, Masahiro Horibe, Shintaro Sato, Daiyu Kondo, Yuji Awano
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Publication number: 20060212974Abstract: After forming an opening, a resist film is formed on the entire surface and a resist pattern is formed by patterning the resist film. The shape of the resist pattern is such that it covers one side of the bottom of the opening. As a result, a Si substrate is exposed only in one part of the opening. Then, using the resist pattern as a mask, a catalytic layer is formed on the bottom of the opening. Then, the resist pattern is removed. Carbon nanotubes are grown on the catalytic layer. At this time, since the catalytic layer is formed on only one side of the bottom of the opening, the Van der Waals force biased towards that side works horizontally on the growing carbon nanotubes. Therefore, the carbon nanotubes are attracted towards the nearest side of the SiO2 film and grow biased towards that side.Type: ApplicationFiled: July 29, 2005Publication date: September 21, 2006Applicant: Fujitsu LimitedInventors: Akio Kawabata, Mizuhisa Nihei, Daiyu Kondo, Shintaro Sato
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Patent number: 7094692Abstract: A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.Type: GrantFiled: October 26, 2004Date of Patent: August 22, 2006Assignee: Fujitsu LimitedInventors: Masahiro Horibe, Akio Kawabata, Mizuhisa Nihei
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Publication number: 20060071334Abstract: A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conductive material is provided on the insulation film. A plurality of carbon nanotubes extend through the insulation film by being filled in an opening part that exposes the first electrically conductive material. The carbon nanotubes electrically connect the first electrically conductive material and the second electrically conductive material to each other. Ends of the carbon nanotubes are fixed to a recessed part provided on a surface of the first electrically conductive material.Type: ApplicationFiled: January 25, 2005Publication date: April 6, 2006Applicant: FUJITSU LIMITEDInventors: Akio Kawabata, Mizuhisa Nihei, Masahiro Horibe
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Publication number: 20050215049Abstract: A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.Type: ApplicationFiled: October 26, 2004Publication date: September 29, 2005Inventors: Masahiro Horibe, Akio Kawabata, Mizuhisa Nihei
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Publication number: 20040182600Abstract: An electronic device having a structure of an ohmic connection to a carbon element cylindrical structure body, wherein a metal material is positioned inside the junction part of a carbon element cylindrical structure body joined to a connection objective and the carbon element cylindrical structure body and the connection objective are connected by an ohmic contact. Methods for producing such an electronic device are also disclosed. Further, a method for growing a carbon nanotube is disclosed.Type: ApplicationFiled: February 9, 2004Publication date: September 23, 2004Applicant: FUJITSU LIMITEDInventors: Akio Kawabata, Mizuhisa Nihei
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Publication number: 20030124717Abstract: A method of manufacturing carbon cylindrical structures, as represented by carbon nanotubes, by growing them on a substrate using a chemical vapor deposition (CVD) method, comprising the steps of implanting metal ions to the substrate surface and then growing the carbon cylindrical structures using the metal ions as a catalyst. A method of manufacturing carbon nanotubes comprising a step of using nano-carbon material as seed material for growing carbon nanotubes is also disclosed. A biopolymer detection device comprising vibration inducing means for inducing vibration, binding means capable of resonating with the vibration induced by the vibration inducing means and capable of binding or interacting with a target biopolymer, and detection means for detecting whether or not the binding means have bound or interacted with the target biopolymer, is also disclosed.Type: ApplicationFiled: November 25, 2002Publication date: July 3, 2003Inventors: Yuji Awano, Akio Kawabata, Shozo Fujita
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Patent number: 5937738Abstract: In a coffee extracting apparatus for extracting coffee essence from the coffee material within an extracting device (10) with use of compressed air generated in an air compressor (11), use is made of an accumulator (23) for accumulating the compressed air. The accumulator is connected to an air passage (12) which connects the extracting device with the air compressor. An air control valve (22) is disposed in the air passage and is for controlling flow of the compressed air to make the accumulator accumulate the compressed air.Type: GrantFiled: June 10, 1997Date of Patent: August 17, 1999Assignee: Sanden CorporationInventors: Karin Okamura, Isao Katou, Makoto Kobayashi, Akio Kawabata
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Patent number: 5911810Abstract: A coffee brewing apparatus has a first cylinder, having a top opening and a bottom opening. A vertically movable second cylinder containing ground coffee, having a top opening and a bottom opening, is disposed below the first cylinder coaxially therewith. A vertically movable upwardly urged plunger, having a top head and a bottom head, is disposed through the bottom opening of the first cylinder, coaxially therewith, in a manner that the top head is sealingly and slidingly fitted in the first cylinder and the bottom head is adapted to be sealingly and slidingly fitted in the second cylinder through the top opening thereof. The plunger has a hot water exit channel vertically therethrough and a pressure-operated hot water release valve disposed in the channel.Type: GrantFiled: June 9, 1998Date of Patent: June 15, 1999Assignee: Sanden Corp.Inventor: Akio Kawabata