Abstract: Two contact holes are formed through an insulating layer at its portion corresponding to a drain of a switching thin film transistor and a height of a wall portion between the two contact holes is selected to be smaller than that of a surrounding insulating layer, whereby the transparent electrode is connected to the drain via the two contact holes with excellent coverage. Thus, a connection between the switching transistor and the transparent pixel electrode in the liquid crystal display device can be effected with improved reliability.

Abstract: An isolator for isolating semiconductor devices, components of an integrated circuit, on a semiconductor substrate, wherein the isolator is delimited by walls of a trench formed on a top surface of the semiconductor substrate, and the trench is filled with a silicon oxide layer deposited by a chemical vapor deposition method. A small ditch created in the middle of a top surface of the silicon oxide layer in the trench is filled with silicon, and at least a top surface of the silicon is thermally oxidized to form another silicon oxide layer.

Abstract: A method for forming a semiconductor device isolation region including steps of forming a first silicon oxide film on a silicon substrate, depositing a first silicon nitride film over the first silicon oxide film, and removing the first silicon oxide film and first silicon nitride film in a device isolation region by using a resist pattern, which is formed by a one-time photolithographic step, as a mask so as to expose the surface of the silicon substrate, removing the resist pattern, and oxidizing the exposed surface of the silicon substrate so as to form a second silicon oxide film having a smaller thickness than the first silicon oxide film and to deposit a second silicon nitride film, removing the second silicon nitride film by anisotropic etching until the second silicon oxide film is exposed in the device isolation region so as to make the second silicon nitride film remain as the side wall portion of the silicon nitride film in only the opening side wall portion of the first silicon nitride film, etchi

Abstract: A method for forming semiconductor device isolation regions including steps of forming a first insulating film on a semiconductor substrate, removing the first insulating film in a portion to become a device isolation region with use of a resist pattern formed in a one-time lithography step as a mask so as to form an opening which reaches the semiconductor substrate, removing the resist pattern to deposit a second insulating film on the first insulating film and the inside of the opening and then etching the entire surface in order to make the second insulating film remain on only the periphery of the bottom of the opening and to expose the surface of the semiconductor substrate in a central portion of the bottom of the opening, forming an oxide film on the surface of the semiconductor substrate exposed in the central portion of the bottom of the opening with use of the first insulating film and the second insulating film on the periphery of the bottom of the opening as a mask by a selective oxidation method,

Abstract: A method of fabricating frozen fine liver pieces for an artificial liver which comprises cutting a liver removed from a human being or an animal, from which blood is removed into fine pieces of square shape and freezing the liver pieces with helium gas. A freezing apparatus for an artificial liver which has gas phase pressurizing means for pressurizing liquid helium coupled to a chamber for storing the liquid helium, a helium gas conduit dipped in the liquid helium passed through the chamber to be closed and contained, in which the liver fine pieces are telescopically received and an exhaust conduit provided with a control valve coupled to the freezing chamber.

Abstract: A method of fabricating frozen fine liver pieces for an artificial liver which comprises cutting a liver removed from a human being or an animal, from which blood has been removed, into fine pieces of square shape and freezing the liver pieces with helium gas. A freezing apparatus for an artificial liver which has gas phase pressurizing means for pressurizing liquid helium coupled to a chamber for storing the liquid helium, a helium gas conduit dipped in the liquid helium passed through the chamber to be closed and contained, to which the liver fine pieces are telescopic, and an exhaust conduit provided with a control valve coupled to the freezing chamber.