Abstract: A nonvolatile semiconductor memory device having a large storage capacity and stabilized rewriting conditions in which a memory cell includes a nonvolatile recording material layer, a selector element and a semiconductor layer provided between the nonvolatile recording material layer and the selector element and having a thickness ranging from 5 to 200 nm.

Abstract: A display device having a thin film semiconductor device including a semiconductor thin film having first and second semiconductor regions formed each into a predetermined shape above an insulative substrate, a conductor fabricated into a predetermined shape to the semiconductor thin film and a dielectric film put between the semiconductor thin film and the conductor, in which the semiconductor thin film is a polycrystal thin film with the crystallization ratio thereof exceeding 90% and the difference of unevenness on the surface of the semiconductor thin film does not exceed 10 nm.

Abstract: A reflectance-controlling layer whose reflectance to irradiation of laser light becomes lower as a thickness thereof becomes thinner is formed on a semiconductor substrate having a first region and a second region. Thereafter, the reflectance-controlling layer on the first region is etched. Then, a laser light is irradiated to the semiconductor substrate to anneal an n?-type semiconductor region and an n+-type semiconductor region of the first region. In the same manner, after the reflectance-controlling layer is formed on the semiconductor substrate, the reflectance-controlling layer on the second region is etched. Then, a laser light is irradiated to the semiconductor substrate to anneal a p?-type semiconductor region and a p+-type semiconductor region of the second region.

Abstract: In the air-conditioning system, a primary side to generate heat includes a heat storage and a heat source and produces cool or warm water using an inexpensive commercial power source such as a nighttime power source. A system collaboration unit is disposed between a motor to drive a water pump and a power source. The unit is connected to the motor via a cable. An output from the inverter is connected to the motor via a cable.

Abstract: In the air-conditioning system, a primary side to generate heat includes a heat storage and a heat source and produces cool or warm water using an inexpensive commercial power source such as a nighttime power source. A system collaboration unit is disposed between a motor to drive a water pump and a power source. The unit is connected to the motor via a cable. An output from the inverter is connected to the motor via a cable.

Abstract: A manufacturing technology of a MOSFET having a shallow junction and a source and drain of a low resistance is provided. After having ion-implanted an As on the surface of a p type well forming a gate electrode, a surface protection layer and an energy absorber layer are deposited on a substrate. When the surface of the substrate is irradiated by a YAG laser beam of the wavelength of 1064 nm for one nano second to 999 nano seconds, a heat absorbed by the energy absorber layer is transmitted to the substrate in an ultra short time, and heats its surface to a melting temperature, and therefore, the impurity is activated, and an extension region of a low resistance is formed in an extremely shallow region of about 20 nm in depth from the surface of the p type well.

Abstract: A manufacturing technology of a MOSFET having a shallow junction and a source and drain of a low resistance is provided. After having ion-implanted an As on the surface of a p type well forming a gate electrode, a surface protection layer and an energy absorber layer are deposited on a substrate. When the surface of the substrate is irradiated by a YAG laser beam of the wavelength of 1064 nm for one nano second to 999 nano seconds, a heat absorbed by the energy absorber layer is transmitted to the substrate in an ultra short time, and heats its surface to a melting temperature, and therefore, the impurity is activated, and an extension region of a low resistance is formed in an extremely shallow region of about 20 nm in depth from the surface of the p type well.

Abstract: Source and drain diffusion layers by an extremely shallower box shaped highly doped impurity distribution that was not obtainable so far by the existent solid phase growing is attained by liquid phase growing with no effects on the gate electrode thereby attaining low consumption power and operation at large current and higher speed in a micro-refined semiconductor device. Contact with inter-connection layer over the entire region of the source and drain diffusion layers is enabled overstriding the gate electrode and without short circuit with the gate electrode by utilizing that the etching selectivity of an insulation film comprising Al as a main constituent atom is extremely higher with respect to an Si oxide film.

Abstract: In the air-conditioning system, a primary side to generate heat includes a heat storage and a heat source and produces cool or warm water using an inexpensive commercial power source such as a nighttime power source. A system collaboration unit is disposed between a motor to drive a water pump and a power source. The unit is connected to the motor via a cable. An output from the inverter is connected to the motor via a cable.

Abstract: In the air-conditioning system, a primary side to generate heat includes a heat storage and a heat source and produces cool or warm water using an inexpensive commercial power source such as a nighttime power source. A system collaboration unit is disposed between a motor to drive a water pump and a power source. The unit is connected to the motor via a cable. An output from the inverter is connected to the motor via a cable.

Abstract: In the air-conditioning system, a primary side to generate heat includes a heat storage and a heat source and produces cool or warm water using an inexpensive commercial power source such as a nighttime power source. A system collaboration unit is disposed between a motor to drive a water pump and a power source. The unit is connected to the motor via a cable. An output from the inverter is connected to the motor via a cable.

Abstract: Source-drain diffusion regions of a shallow junction and a stacked metal silicide film structure of a low resistance in a miniaturized MIS transistor are to be attained while ensuring high reliability. The concentration of an impurity (As, P, In, Sb) in surface areas of source-drain diffusion regions (6, 7) is set to a value of not smaller than 5×1021/cm3. Alternatively, an alloy film of germanium and silicon containing not less than 20% of germanium, or germanium film, is formed on surface areas of the source-drain diffusion regions (6, 7).

Abstract: In the air-conditioning system, a primary side to generate heat includes a heat storage and a heat source and produces cool or warm water using an inexpensive commercial power source such as a nighttime power source. A system collaboration unit is disposed between a motor to drive a water pump and a power source. The unit is connected to the motor via a cable. An output from the inverter is connected to the motor via a cable.