Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.

Abstract: A dielectric barrier discharge electrode of an embodiment has: a dielectric; a first electrode provided to be exposed on the dielectric; a second electrode provided to be covered by the dielectric; and a third electrode provided to be covered by the dielectric in a neighborhood of the first electrode.

Abstract: A plasma disinfection device of an embodiment includes: an electrical dust collector including a plurality of heat exchange fins, a needle electrode which causes a discharge in a gas flow flowing between the plurality of heat exchange fins, and a direct-current power supply electrically connected to the needle electrode; and a plasma generator including a dielectric provided on each of facing surfaces of the plurality of heat exchange fins, a discharge electrode provided to be exposed on a surface of the dielectric and arranged to cross a direction of flow of the gas flow, and an alternating-current power supply electrically connected to the discharge electrode.

Abstract: A dielectric barrier discharge electrode of an embodiment has: a dielectric; a first electrode provided to be exposed on the dielectric; a second electrode provided to be covered by the dielectric; and a third electrode provided to be covered by the dielectric in a neighborhood of the first electrode.

Abstract: A dielectric barrier discharge device in an embodiment includes: a dielectric having a hollow-shaped flow path; a first electrode and a second electrode provided apart along the dielectric so as to cause a first region in which plasma is formed inside the flow path; and a power supply to apply a voltage between the first electrode and the second electrode. The dielectric includes a flow path area adjusting portion provided to project from an inner wall of the dielectric toward a center of the flow path in a manner that a first flow path cross-sectional area in the first region is smaller than a second flow path cross-sectional area in a second region other than the first region in the flow path.

Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.

Abstract: A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing part introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.

Abstract: A dust collector in an embodiment includes: a discharge electrode having tips; a counter electrode including a plurality of conductor plates each having an end opposed to the discharge electrode and arrange side by side in a plate thickness direction; and a power supply that applies voltage between the discharge electrode and the counter electrode. The counter electrode has a first region closer to the tips and a second region farther from the tips than the first region, and at least one of an interval, a distance from the tips, and a shape of at least part of ends in the first region is different from an interval, a distance, or a shape in the second region.

Abstract: A gas processing apparatus of an embodiment includes a gas processing unit, a flow forming unit, an AC power supply, and first and second filters. The gas processing unit includes a plurality of stacks each having a dielectric substrate, a first to a third electrode. The flow forming unit forms a flow of a target gas flowing toward the gas processing unit. The AC power supply applies an AC voltage across the first, second electrodes and the third electrode so as to generate plasma induced flows of the target gas between the dielectric substrates. The first filter is disposed at an upstream of the gas processing unit, and removes ozone. The second filter is disposed at a downstream of the gas processing unit, and removes ozone.

Abstract: According to one embodiment, a plasma actuator includes an electrode member, an application electrode, a ground electrode, and a supporting member. The electrode member has a first surface facing a processing object and a second surface of an opposite side of the first surface. The application electrode is provided in the first surface. The ground electrode is provided in the second surface or an inner portion of the electrode member. The supporting member is provided in at least one of the electrode member and the application electrode to form a processing space between the processing object and the electrode member. The supporting member is capable of abutting on the processing object.

Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

Abstract: In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.

Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.

Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.

Abstract: In one embodiment, a plasma induced flow electrode structure has an electrode block, an insulating layer and an electrode layer. The electrode block has first and second surfaces and through holes penetrating between these first and second surfaces. The insulating layer is disposed on the first surface and inside the through holes. The electrode layer is disposed on the insulating layer of the first surface.

Abstract: A dust collector in an embodiment includes: a discharge electrode having tips; a counter electrode including a plurality of conductor plates each having an end opposed to the discharge electrode and arrange side by side in a plate thickness direction; and a power supply that applies voltage between the discharge electrode and the counter electrode. The counter electrode has a first region closer to the tips and a second region farther from the tips than is the first region, and at least one of an interval between or a distance from the tips or a shape of at least part of the ends in the first region is different from the interval, the distance, or the shape in the second region.

Abstract: A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of the ion source, and a cathode disposed outside the housing of the ion source. A first opening can be disposed in a portion of the housing such the anode is exposed to a region between the anode and the substrate holding portion. The ion source can be configured to generate an ion beam with which the substrate is irradiated. A first structure can be disposed between the ion source and the substrate holding portion. The first structure can have a first through hole through which the ion beam can pass. The first structure can include a conductor, and an opening dimension of the first through hole can be equal to or larger than an opening dimension of the first opening.

Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.

Abstract: In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.

Abstract: In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.