Abstract: In one embodiment, a plasma induced flow electrode structure has an electrode block, an insulating layer and an electrode layer. The electrode block has first and second surfaces and through holes penetrating between these first and second surfaces. The insulating layer is disposed on the first surface and inside the through holes. The electrode layer is disposed on the insulating layer of the first surface.

Abstract: A gas processing apparatus of an embodiment has stacks, gas flow paths, an AC power supply, and a flow limiter. The stacks are away from each other and in parallel. Each stack includes a dielectric substrate and a first to a third electrode. The first and second electrodes are respectively disposed on the first and second main surfaces of the dielectric substrate. The third electrode is disposed inside the dielectric substrates. The gas flow paths supply a target gas between the stacks, The AC power supply applies an AC voltage across the first and second electrodes and the third electrodes, so as to generate plasma induced flows of the target gas between the dielectric substrates. The flow limiter is disposed on a downstream side of the stacks and limits a flow rate of the target gas.

Abstract: A gas processing apparatus of an embodiment includes: first and second dielectric substrates facing with each other; first and second discharge electrodes respectively disposed on a pair of facing principal surfaces of the dielectric substrates; first and second ground electrodes respectively disposed on a pair of principle surfaces at opposite sides of the principle surfaces of the dielectric substrates; a gas flow path to supply gas to be processed between the discharge electrodes; an AC power source to generate first and second plasma-induced flows by applying an AC voltage between the discharge electrodes and the ground electrodes; and a region disposed between the dielectric substrates at downstream of the plasma-induced flows from the discharge electrodes, and a gap between the dielectric substrates being 1.3 times or less of a sum of thicknesses of the plasma-induced flows.

Abstract: According to one embodiment, a device manufacturing apparatus includes a substrate holding portion holding a substrate; an ion source including a housing, an anode disposed in the housing, a cathode disposed outside the housing, and a first opening disposed in a portion of the housing such that the anode is exposed to a region between the anode and the substrate holding portion, the ion source configured to generate an ion beam with which the substrate is irradiated; and at least one first structure disposed between the ion source and the substrate holding portion, and having a first through hole through which the ion beam passes. The first structure includes a conductor, and an opening dimension of the first through hole is equal to or larger than an opening dimension of the first opening.

Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.

Abstract: A gas processing apparatus of an embodiment includes: first and second dielectric substrates facing with each other; first and second discharge electrodes respectively disposed on a pair of facing principal surfaces of the dielectric substrates; first and second ground electrodes respectively disposed on a pair of principle surfaces at opposite sides of the principle surfaces of the dielectric substrates; a gas flow path to supply gas to be processed between the discharge electrodes; an AC power source to generate first and second plasma-induced flows by applying an AC voltage between the discharge electrodes and the ground electrodes; and a region disposed between the dielectric substrates at downstream of the plasma-induced flows from the discharge electrodes, and a gap between the dielectric substrates being 1.3 times or less of a sum of thicknesses of the plasma-induced flows.

Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

Abstract: A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.

Abstract: In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.

Abstract: A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

Abstract: A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

Abstract: In one embodiment, a method of cleaning a film forming apparatus includes: plasmatizing cleaning gas having at least one of the group consisting of chlorine gas, hydrocarbon gas, and chlorinated hydrocarbon gas; and supplying the plasmatized cleaning gas to a heated inner part of the film forming apparatus.

Abstract: In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.

Abstract: A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

Abstract: A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.

Abstract: According to an embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes: arranging a semiconductor substrate on a first electrode out of first and second electrodes arranged to be opposed to each other in a vacuum container; applying negative first pulse voltage and radio-frequency voltage to the first electrode, the negative first pulse voltage being superimposed with the radio-frequency voltage; applying negative second pulse voltage to the second electrode in an off period of the first pulse voltage; and processing the semiconductor substrate or a member on the semiconductor substrate by plasma formed between the first and second electrodes.

Abstract: A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage.

Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.