Abstract: To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area.

Abstract: A moving picture reproduction apparatus is disclosed which can reproduce successive moving pictures representing an appropriate movement only by extracting, from within motion information inputted as fragmentary movements, a small number of particular motion parameters of such movement as, for example, a turning movement of the face of a person or a movement of the mouth. The moving picture reproduction apparatus comprises a motion parameter extraction circuit for extracting a motion parameter from motion information of an inputted picture, a video sequence storage circuit for storing a plurality of video sequences which are series of moving pictures individually corresponding to a plurality of motion parameters, and a moving picture production circuit for reading out, in accordance with the motion parameter extracted by the motion parameter extraction means, a corresponding video sequence from the video sequence storage means and producing a reproduced moving picture from the video sequence.

Abstract: An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.

Abstract: An electron-beam exposure system includes a stage on which a wafer is set, an exposure unit for exposing the wafer set on sid stage using an electron-beam, an optical detecting unit having an optical axis, and, a locating control unit for locating the stage at a target position based on a relative position of a deflection center line to the optical axis of the optical detecting means which target position is detected using a reference mark formed on the movable stage. In an electron-beam exposure method using the above electron-beam exposure system, the relative position is detected, and the target position of the movable stage is then calculated based on the relative position.

Abstract: The present invention relates to a novel compound having a 12-lipoxygenase inhibitory effect, of the general formula (I), a precursor thereof, and a medicine containing the same, ##STR1## wherein R.sup.1 represents a hydrogen atom or a hydroxy group; one of R.sup.2 and R.sup.3 represents a hydrogen atom, while the other cyano group ; and Ar is a group represented by the following general formula (a), (b) or (c), ##STR2## wherein R.sup.4 represents a hydrogen atom, a lower alkyl group, a lower alkoxy group, a halogen atom, a thrifluoromethyl group or a cyano group.

Abstract: The present invention provides compounds having 12-lipoxygenase inhibitory effect and medicines inhibiting 12-lipoxygenase selectively, and relates to novel coumarin derivatives and medicines containing the compounds as effective ingredients. Furthermore, this invention relates to compounds capable of converting to compounds inhibiting 12-lipoxygenase activities selectively according to the cleavage of modified moieties in vivo and medicines inhibiting 12-lipoxygenase selectively, and relates to novel coumarin derivatives having acyl groups as modified moieties and medicines containing the compounds as effective ingredients. The compounds of the present invention can inhibit 12-lipoxygenase strongly and selectively, and being useful as medicines for preventing and treating various circulatory diseases such as arteriosclerosis and vasospasm and for preventing of the metastasis of some kinds of cancers, and show low toxicity and few side effects.

Abstract: To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area.

Abstract: A charged particle exposure system comprises an electron gun, an irradiation optical system, an incident mask deflector, a stencil mask, an irradiation mask provided on an incident side of the deflector, a reduction optical system, and a stage. The stencil mask has a group of normal patterns and at least two mark patterns. Images of the mark patterns are transferred onto the surface of a sample on the stage. A reduction ratio and rotational angle of the transferred images are computed according to a distance between the images, positional relations of the images, a known distance between the mark patterns on the stencil mask, and known positional relations of the mark patterns on the stencil mask. Based on the computed reduction ratio and rotational angle, exposure conditions of the exposure system are adjusted.

Abstract: An electron beam exposure system includes an electron beam shaping mask having a plurality of apertures for shaping an electron beam, a blanking plate disposed between the electron beam shaping mask and an object for inhibiting the passage of the electron beam deviated from a predetermined optical axis, a current adding circuit supplied with a first current induced in the electron beam shaping mask as a result of capturing of the electron beam and a second current induced in the blanking plate as a result of capturing of the electron beam for generating a third current as a sum of the first and second currents, a current/voltage converter for generating a first pulse signal in response to the third current, a first counter supplied with the first pulse signals for counting the first pulse signals and outputting a first count value, a second counting circuit supplied with a second pulse signal corresponding to the driving signal, for counting the second pulse signals and generating a second count value represe

Abstract: An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.

Abstract: A transparent mask plate used in a charged particle beam exposure apparatus includes a base plate, an exposure pattern area, and a calibration area. The exposure pattern area is formed in the base plate and has a plurality of transparent patterns for shaping a cross section of a charged particle beam into a block pattern. The calibration area is formed in the base plate, and has a plurality of transparent patterns used for obtaining a condition for deflecting the charged particle beam. The plurality of transparent patterns formed in the calibration area are arranged at the same pitch as the plurality of transparent patterns formed in the exposure pattern area. Each of the plurality of transparent patterns formed in the calibration area corresponds to one of the plurality of transparent patterns formed in the exposure pattern area.

Abstract: A charged particle beam exposure apparatus employs a main deflector made of electromagnetic coils and a subdeflector made of electrostatic deflection electrodes. An exposure method used for this apparatus is capable of shortening a wait time of the main deflector. The main deflector deflects a charged particle beam in a direction X, while the subdeflector deflects the beam around the deflecting position of the main deflector to expose an object to the beam. An area to be exposed on the object is divided into thin subfields such that the width, in an X-axis direction of each subfield, is approximately 1/3 the length in a Y-axis direction of the same.

Abstract: A charged particle beam exposure system checks for the shape of the charged particle beam shaped by a mask by causing a scanning of a marker pattern provided on a substrate along a scanning path. The reflected electrons emitted from the substrate are detected, and the shape of the charged particle beam is obtained based upon the profile of the reflected electrons along the scanning path. By comparing expected pattern of the reflected charged particles, one can detect anomaly in the beam shaping aperture on the mask, wherein the step for comparing the observed pattern and the expected pattern includes a step of pattern matching for shifting the patterns with each other for seeking a minimum of unoverlapped area of the patterns. When the difference between the observed pattern and the expected pattern exceeds a threshold in the state that the unoverlapped area is minimized, an alarm produced with the information indicative of the location of the pattern wherein the threshold has been exceeded.

Abstract: A method of exposing a pattern on a substrate by a charged particle beam includes the steps of energizing first and second mask deflectors provided at an upstream side of a stencil mask simultaneously to obtain a first relativistic relationship of energization between the first and second mask deflectors, energizing the first mask deflector and simultaneously the second mask deflector according to the first relativistic relationship so as to hit a selected aperture on the stencil mask, to obtain an absolute deflection of the charged particle beam as a function of the energization of the first mask deflector, energizing third and fourth mask deflectors provided at a downstream side of the stencil mask simultaneously to obtain a second relativistic relationship of energization between the third and fourth mask deflectors, and energizing the first through fourth mask deflectors according to the first and second relativistic relationship and further to the absolute relationship, such that the charged particle bea

Abstract: A charged particle beam exposure method for deflecting a charged particle beam in a deflection system which includes electromagnetic deflection coils, includes the steps of (a) controlling the deflection system based on deflection data, and (b) generating heat at least a vicinity of the electromagnetic deflection coils so as to compensate for a change in heat generated from the electromagnetic deflection coils.

Abstract: A rectangular multiple connector has a connector shell surrounding a contact support insulator having contacts fixed therein in two rows. The connector shell includes conductive projection members having a required rigidity provided at both the ends of the contact support insulator. Two conductive side plates are provided along side surfaces of the contact support insulator and fixed at their ends in the projection members. With this arrangement, both the ends of the connector shell having projection members mainly support torsional or bending forces created upon connecting the connector to a mating connector without occurrence of any deformation of connector shell, thereby ensuring complete connection between the contacts of the connectors.

Abstract: An electron beam exposure apparatus comprises an electron beam source, a holder for supporting a semiconductor substrate, a beam patterning part for patterning the electron beam, a beam focusing system for focusing the patterned electron beam on the semiconductor substrate, and a beam deflector system for deflecting the focused electron beam. The beam deflector comprises at least first, second and third coil assemblies connected in series for producing first through third magnetic fields respectively such that the first through third magnetic fields extend generally perpendicularly to the beam path of the electron beam at respective vertical levels on the beam path.

Abstract: A charged particle beam exposure method deflects a charged particle beam in a deflection system which includes electromagnetic deflection coils and an electromagnetic lens. The charged particle beam exposure method includes controlling the deflection system based on deflection data, and blocking heat radiation from at least the electromagnetic deflection coils by a partition so as to prevent the heat radiation from reaching the electromagnetic lens and to prevent heat conduction to the electromagnetic lens by the partition.

Abstract: A miniature multiple electrical connector consists of a plug connector and a receptacle connector having an insulating block and a metal shell. The metal shell is fixed to the insulating block by fitting anchoring protrusions provided along both sides of the insulating block in anchoring apertures of fixing tongues provided on the metal shell. When the plug connector is being inserted into the receptacle connector, the metal shell of the receptacle connector is likely to be deformed by a metal shell of the plug connector. In order to prevent such a deformation of the metal shell, there is provided means for anchoring the center of the metal shell weakest in mechanical strength to the insulating block or means for preventing application of a force to the center of the metal shell when the plug connector is being inserted into the receptacle connector.

Abstract: A lithography system and a method of using the same, wherein a charged-particle beam is deflected to pass through a selected block of stencil pattern on a stencil mask and thereafter the beam forms an image of the stencil pattern on an objective, the lithography system comprising astigmatism and focus compensation coils disposed on both the upstream and downstream sides of the stencil mask, thereby aberration of the incident beam onto the stencil mask being corrected by the astigmatism and focus compensation coils disposed on the upstream side forming a sharp image on the mask, and further aberration of the mask-penetrated beam on the downstream side being corrected by the astigmatism and focus compensation coils disposed on the downstream side forming a sharp image of the stencil pattern on the objective.