Abstract: A driver laser for an extreme ultra violet light source device capable of suppressing self-oscillation light, amplifying a laser beam efficiently, and reducing a device size. The driver laser has an oscillator for generating a laser beam to output the generated laser beam, and at least one amplifier for amplifying the laser beam output from the oscillator to output the amplified laser beam. The amplifier includes a discharge unit which amplifies the laser beam by using energy of a laser medium excited by discharge, a feedback mirror which leads the laser beam output from the discharge unit to the discharge unit, a polarizer which leads the laser beam output from the oscillator into the discharge unit and also reflects the laser beam output from the discharge unit to a predetermined direction, and a self-oscillation light filter which attenuates self-oscillation light output from the discharge unit.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: An extreme ultra violet light source apparatus in which both a mechanism of supplying a droplet target to a laser application position at a high speed and a mechanism of trapping charged particles generated from plasma are managed without disturbing a track of the target. The apparatus includes: a target nozzle that injects a target material toward a plasma generation point; an electric charge supply unit that charges the injected target material; an acceleration unit that accelerates the charged target material; a laser oscillator that applies a laser beam to the target material at the plasma generation point to generate plasma; and electromagnets that form a magnetic field at the plasma generation point such that the magnetic field has substantially straight lines of magnetic flux in substantially parallel with a traveling direction of the target material in the track of the target material.

Abstract: A debris collector for EUV light generators is disclosed which enables to improve durabilities of optical units in a chamber including a collector mirror, to keep the vacuum degree in the chamber, and to suppress decrease in EUV light output by efficiently collecting debris bumping into the collector mirror at high speed from a target transformed into a plasma or debris adhering the collector mirror. A laser light irradiator (10) is so arranged that the irradiation direction of a laser light (L) is opposite to the traveling direction of a target (1). A debris collector (30) for collecting debris (3) is arranged in the travel path of the target (1).

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A water-based ink for ink-jet recording may include a benzotriazole type compound for preventing corrosion of a metal in an ink ejection portion of an ink-jet head, and a coloring agent having a divalent metal in a structure thereof, and a polymer containing a polymerization unit having at least two carboxyl groups in an ethylene chain unit. The generation of a precipitate by reaction between the divalent metal and the benzotriazole type compound may be suppressed without using a sequestering agent. The ink may have an excellent corrosion inhibiting effect and an ink ejection stability effect.

Abstract: A driver laser for EUV light source apparatus which driver laser simultaneously achieves short-pulsing and multi-line oscillation. The driver laser includes: a short-pulse multi-line oscillated CO2 laser oscillator having a device that shortens width of pulses included in a laser beam to be output and a device that suppresses amplitude of an oscillation spectrum exhibiting an energy peak value; and at least one amplifier that inputs the laser beam output from the short-pulse multi-line oscillated CO2 laser oscillator and amplifies the input laser beam to output the amplified laser beam.

Abstract: In the present invention, the most likely transition source state bits are selected according to the path metric of the state bits corresponding to the state bits that could be taken for the encoded bits to be input, and are stored in the survival path memory. Therefore in the trace back processing, the decoded bits can be output only by repeating the extraction of the most significant bit of the transition source state bits. As a consequence, trace back processing can be performed very simply, and decoding processing becomes possible in a short time even if a general purpose processor executes the software.

Abstract: An ink-jet recording apparatus includes a rubber member in an ink flow passage. The rubber member is pretreated with an organic solvent having a high boiling point, a water-based liquid containing a coloring agent, or a mixture of the two. The pretreatment is effective for preventing additives in the rubber material from being eluted into a water-based liquid for ink-jet recording, which can lead to clogging of ink-jet nozzles and the like.

Abstract: A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.

Abstract: The present invention provides a wireless communication system having a plurality of wireless communication apparatuses and a proximity wireless communication apparatus. The plurality of wireless communication apparatuses each has a setting block to which a wireless data communication destination is set and a wireless data communication block for executing wireless data communication with the wireless data communication destination set to the setting block. The proximity wireless communication apparatus executes wireless communication with any of the plurality of wireless communication apparatuses brought into proximity of a predetermined range of the proximity wireless communication apparatus. The proximity wireless communication apparatus includes a storage block and a wireless transmission block. The plurality of wireless communication apparatuses each includes a wireless transmission block and a setting control block.

Abstract: A debris collector for EUV light generators is disclosed which enables to improve durabilities of optical units in a chamber including a collector mirror, to keep the vacuum degree in the chamber, and to suppress decrease in EUV light output by efficiently collecting debris bumping into the collector mirror at high speed from a target transformed into a plasma or debris adhering the collector mirror. A laser light irradiator (10) is so arranged that the irradiation direction of a laser light (L) is opposite to the traveling direction of a target (1). A debris collector (30) for collecting debris (3) is arranged in the travel path of the target (1).

Abstract: An extreme ultraviolet light source device which makes it possible to increase a working distance and obtain extreme ultraviolet light with a high output. The extreme ultraviolet light source device generates a plasma by irradiating a target (22) with laser light from a driving laser device (25), and generates extreme ultraviolet (EUV) light with a wavelength of several nanometers to several tens of nanometers. The extreme ultraviolet light source device comprises a target supply device which has a charge applying unit (23) that applies a charge to the target (22), and an acceleration unit (24) which accelerates the charged target (22) using an electromagnetic field. The target supply device supplies the target (22) comprised of a rare gas element such as xenon (Xe) or the like, or a metal such as lithium (Li), tin (Sn), tin oxide (SnO2) or the like, as ionized molecules, atoms or masses comprising a plurality of atoms, or as ionized clusters.

Abstract: A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.

Abstract: A driver laser for EUV light source apparatus which driver laser simultaneously achieves short-pulsing and multi-line oscillation. The driver laser includes: a short-pulse multi-line oscillated CO2 laser oscillator having a device that shortens width of pulses included in a laser beam to be output and a device that suppresses amplitude of an oscillation spectrum exhibiting an energy peak value; and at least one amplifier that inputs the laser beam output from the short-pulse multi-line oscillated CO2 laser oscillator and amplifies the input laser beam to output the amplified laser beam.

Abstract: A nanoporous inorganic material with high three-dimensional regularity having a large number of fine pores having a nanometer-order size in an inorganic skeleton structure, which has a pore size of 0.5 to 5 nm at a peak of a pore size distribution determined from a nitrogen adsorption isotherm, and a half-width of 1 (2?/degree) or less in an X-ray diffraction peak of a (100) plane.

Abstract: A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.

Abstract: A light source device capable of extending the life of a collector mirror and reducing running cost by protecting the collector mirror from debris that is considered harmful to a mirror coating while securing the collection solid angle and collection rate of EUV light. The light source device includes a target supply unit for supplying a material to become the target; a laser unit for generating plasma by applying a laser beam to the target; a collection optical system for collecting the extreme ultra violet light radiating from the plasma and emitting the extreme ultra violet light; and magnetic field generating unit for generating a magnetic field within the collection optical system when supplied with current so as to trap charged particles radiating from the plasma.

Abstract: A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.

Abstract: A light source device capable of extending the life of a collector mirror and reducing running cost by protecting the collector mirror from debris that is considered harmful to a mirror coating while securing the collection solid angle and collection rate of EUV light. The light source device includes a target supply unit for supplying a material to become the target; a laser unit for generating plasma by applying a laser beam to the target; a collection optical system for collecting the extreme ultra violet light radiating from the plasma and emitting the extreme ultra violet light; and magnetic field generating unit for generating a magnetic field within the collection optical system when supplied with current so as to trap charged particles radiating from the plasma.