Patents by Inventor Akira Fujinoki

Akira Fujinoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6480518
    Abstract: A synthetic glass member for use in excimer laser lithography, having superior homogeneity, high transmittance for ArF excimer laser beams and an excellent resistance against lasers is made from high purity synthetic quartz glass, and it is characterized in that layered structures, striae in three directions and internal strains are thermally and mechanically removed, the distribution of refractive index (&Dgr;n) in a plane orthogonal to the optical axis is up to about 1×10−6, the distribution of refractive index (&Dgr;n) in a plane parallel to the optical axis is up to about 5×10−6, the birefringence is up to about 2 nm/cm, the hydrogen molecule concentration is at least about 2×1017 molecules/cm3, and the internal transmittance is at least about 99.8% at a wavelength of 193.4 nm.
    Type: Grant
    Filed: March 3, 2000
    Date of Patent: November 12, 2002
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Fujinoki, Takayuki Oshima, Hiroyuki Nishimura, Yasuyuki Yaginuma
  • Publication number: 20020151425
    Abstract: An object of the present invention is to provide a synthetic quartz glass optical material having a high optical transmittance for a radiation 157 nm in wavelength emitted from F2 excimer laser and a high resistance against irradiation of a F2 excimer laser radiation, yet having a uniformity suitable for such a fine patterning using a F2 excimer laser, and to provide an optical member using the same.
    Type: Application
    Filed: January 29, 2002
    Publication date: October 17, 2002
    Inventors: Akira Fujinoki, Hiroyuki Nishimura, Toru Yokota, Yasuyuki Yaginuma, Akira Sato, Tetsuji Ueda
  • Publication number: 20020122902
    Abstract: An object of the present invention is to provide an improved blank such that an optical member of a high homogeneity can be obtained therefrom, and to provide a vessel and a heat treatment method for heat-treating a highly uniform synthetic quartz blank. In a first aspect of the invention a special designed blank is provided showing a concave shaped outer surface. In a second aspect of the invention a special designed vessel for heat-treating blanks is provided, whereby the degree of heat emission at the center is set higher than that of the surroundings.
    Type: Application
    Filed: November 28, 2001
    Publication date: September 5, 2002
    Inventors: Tetsuji Ueda, Akira Fujinoki, Hiroyuki Nishimura, Martin Trommer, Stefan Ochs
  • Publication number: 20020076559
    Abstract: An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
    Type: Application
    Filed: August 22, 2001
    Publication date: June 20, 2002
    Inventors: Tatsuhiro Sato, Nobumasa Yoshida, Akira Fujinoki, Kyoichi Inaki, Tomoyuki Shirai
  • Publication number: 20010030798
    Abstract: Object: To provide a projection aligner with ArF excimer laser as light source using an optical system made of quartz glass containing hydrogen producible with durability and no deterioration of optical properties at a low cost and with ease as a whole of the optical system.
    Type: Application
    Filed: November 25, 1998
    Publication date: October 18, 2001
    Inventors: AKIRA FUJINOKI, HIROYUKI NISHIMURA
  • Patent number: 6296826
    Abstract: An efficient method is proposed for the utilization of heretofore useless extremely fine fluffy silica particles obtained as a flue dust in the flame-hydrolysis of vaporizable silicon compound in an oxyhydrogen flame in the manufacturing process of fused silica glass. The method comprises the steps of (a) uniformly mixing the silica particles with water, (b) drying the wet mixture under specified conditions to give dried cakes of the silica particles, (c) disintegrating the dried cakes into porous silica beads having an appropriate particle diameter, (d) semi-sintering the porous silica beads at 800 to 1300° C. and (e) vitrifying the semi-sintered silica beads at 1350 to 1550° C. into vitrified poreless silica glass particles which can be used as a base material for the production of fused silica glass articles.
    Type: Grant
    Filed: December 30, 1994
    Date of Patent: October 2, 2001
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Fujinoki, Akihiko Sugama, Tohru Yokota
  • Patent number: 6266978
    Abstract: A simple method for producing a synthetic quartz glass having excellent homogeneity and high transmittance, which is useful as an optical material in producing steppers equipped with an ArF excimer laser as a radiation source. A method for producing a synthetic quartz glass for use in ArF excimer laser lithography, which comprises irradiating a highly homogeneous synthetic quartz glass containing less than 60 ppb of Na with ultraviolet radiation having a maximum wavelength of 260 nm for not less than the duration expressed by the equation: Y=(80X−1880)/Z wherein X represents an Na concentration (ppb), Y represents the duration of irradiation (hours), and Z represents the illuminance of an ultraviolet radiation on an irradiated surface (mW/cm2).
    Type: Grant
    Filed: September 9, 1999
    Date of Patent: July 31, 2001
    Assignees: Heraeus Quarzglas GmbH, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Takayuki Oshima, Akira Fujinoki, Hiroyuki Nishimura, Yasuyuki Yaginuma
  • Patent number: 6209354
    Abstract: A method of preparing a high purity massive synthetic silica glass article. The method includes a homogenizing step, wherein a rod shaped synthetic silica glass material has a greater optical homogeneity in a plane perpendicular to its rotational axis than a plane parallel thereto, a step of forming the homogeneous synthetic silica glass and a step of cutting the formed synthetic silica glass.
    Type: Grant
    Filed: July 26, 1999
    Date of Patent: April 3, 2001
    Assignees: Shin-Etsu Quartz Products Co., Ltd., Haraeus Quarzglas GmbH
    Inventors: Akira Fujinoki, Akihiko Sugama, Masaatsu Kataoka, Wolfgang Englisch
  • Patent number: 6094941
    Abstract: An excellent quartz glass optical member having stable laser beam resistance, can be obtained by preparing quartz glass in a process having:a first step of subjecting a starting material obtained from silicon halide, alkoxysilane, alkylalkoxysilane, etc. to an oxidizing heat treatment in a temperature range between 600 and 1,500.degree. C., to decrease the hydrogen concentration to 5.times.10.sup.16 molecules/cm.sup.3 or less and at the same time eliminate reducing defects;a second step of subsequently holding the quartz in a hydrogen-containing atmosphere in a temperature range between 200 and 600.degree. C., to establish a hydrogen concentration in the glass of 1.times.10.sup.17 molecules/cm.sup.3 ; anda third step of carrying out a treatment of making the hydrogen concentration of the resultant quartz glass uniform in an atmosphere of air, inert gas, hydrogen, a mixture of hydrogen and inert gas, or a mixture of air and inert gas in a temperature range between 300 and 800.degree. C.
    Type: Grant
    Filed: July 15, 1998
    Date of Patent: August 1, 2000
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Fujinoki, Toshikatsu Matsuya, Hiroyuki Nishimura
  • Patent number: 6031238
    Abstract: A known projection aligner for integrated circuit fabrication, in which an integrated circuit pattern image is projected on a wafer, comprises an ArF excimer laser and an optical system composed of groups of quartz glass optical members made of synthetic quartz glass. To provide a projection aligner having optical properties, such as durability, optical transmittance and the like, which are not degraded over a long time of operation and the optical system can be constructed at a low cost as a whole, it is suggested that the optical system comprises a first quartz glass optical member group whose hydrogen molecule concentration is in the range between 1.times.10.sup.17 and 5.times.10.sup.18 molecules/cm.sup.3 and a third quartz glass optical member group whose hydrogen molecule concentration is in the range between 5.times.10.sup.18 to 5.times.10.sup.19 molecules/cm.sup.3.
    Type: Grant
    Filed: February 26, 1998
    Date of Patent: February 29, 2000
    Assignees: Heraeus Quarzglas GmbH, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Fujinoki, Hiroyuki Nishimura, Toshiki Mori
  • Patent number: 5977000
    Abstract: Opaque silica glass having a density of 2.0 to 2.18 g/cm.sup.3, sodium and potassium elements concentrations in the silica glass of each 0.5 ppm or less and an OH group concentration of 30 ppm or less, and containing bubbles which are independent bubbles having the following physical values: a bubble diameter of 300 .mu.m or less, and a bubble density of 100,000 to 1,000,000 bubbles/cm.sup.3, and a production process for opaque silica glass, including: filling quartz raw material grain having a particle size of 10 to 350 .mu.m in a heat resistant mold, heating it in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50 to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-raising speed not exceeding 50.degree. C./minute, then, slowly heating it up to a temperature higher by 10 to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C.
    Type: Grant
    Filed: November 25, 1997
    Date of Patent: November 2, 1999
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Tatsuhiro Sato, Akira Fujinoki, Kyoichi Inaki, Nobumasa Yoshida, Tohru Yokota
  • Patent number: 5970746
    Abstract: A method of preparing a ball-shaped synthetic silica glass optical article. The method includes a step of providing a rod-shaped synthetic silica glass having end faces at both sides thereof and having fewer cords per unit volume viewed in a direction perpendicular to a line connecting the end faces relative to the number of cords per unit volume viewed in a direction along the line connecting the end faces. The synthetic silica glass being optically homogeneous in the direction perpendicular to the line connecting the end faces. The method includes the further step of establishing support portions at the end faces of the synthetic silica glass. The rod-shaped synthetic silica glass is thereupon heated while being rotated around an axis connecting the support portions wherein a molten zone is formed.
    Type: Grant
    Filed: February 24, 1998
    Date of Patent: October 26, 1999
    Assignees: Shin-Etsu Quartz Products Co., Ltd., Haraeus Quarzglas GmbH
    Inventors: Akira Fujinoki, Akihiko Sugama, Masaatsu Kataoka, Wolfgang Englisch
  • Patent number: 5790315
    Abstract: A high purity ball-shaped optical article formed of silica glass useful in optical systems employed in photolithography applications. The optical article is characterized by end faces and a side face positioned between the end faces. The side face is externally projected beyond the outline of the end faces and has a spherical configuration. The optical article is uniquely characterized by a smaller number of cords per unit area, viewed in a direction perpendicular to a line connecting the end faces, than the number of cords per unit area viewed in a direction along the line connecting the end faces. The article is also defined by optical homogeneity in a direction perpendicular to the line connecting the end faces.
    Type: Grant
    Filed: March 1, 1995
    Date of Patent: August 4, 1998
    Assignees: Shin-Etsu Quartz Products Co., Ltd., Haraeus Quarzglas GmbH
    Inventors: Akira Fujinoki, Akihiko Sugama, Masaatsu Kataoka, Wolfgang Englisch
  • Patent number: 5772714
    Abstract: A process for producing opaque silica glass in which a quartz raw material grain having a particle size of 10 to 350 .mu.m is filled into a heat resistant mold, the quartz raw material grain is heated in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50.degree. to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-increase speed not exceeding 50.degree. C./minute, then, slowly heated up to a temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and the heated quartz raw material grain is further maintained at the temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted, followed by cooling down to the room temperature.
    Type: Grant
    Filed: July 18, 1996
    Date of Patent: June 30, 1998
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Tatsuhiro Sato, Akira Fujinoki, Kyoichi Inaki, Nobumasa Yoshida, Tohru Yokota
  • Patent number: 5766291
    Abstract: A porous silica body with a density of 0.1 g/cm.sup.3 to 0.5 g/cm.sup.3 and a density variation of less than 30% is subjected to a first heat-treatment in an ammonia-containing atmosphere, a second heat-sintering in non-oxidizing atmosphere, and further heat-treatment at a temperature in the range of 1400.degree. C. to 2000.degree. C. under an increased pressure of 500 kg/cm.sup.2 or more in a non-oxidizing atmosphere.
    Type: Grant
    Filed: October 16, 1996
    Date of Patent: June 16, 1998
    Assignee: Heraeus Quarzglas GmbH
    Inventors: Tatsuhiro Sato, Akira Fujinoki
  • Patent number: 5523266
    Abstract: A synthetic quartz glass optical member for an ultraviolet laser, where the quartz glass has a hydroxyl content of 10-100 ppm, a chlorine content of 200 ppm or less, a hydrogen content of 1.times.10.sup.16 molecules/cm.sup.3 or less, a homogeneity of refractive index of 5.times.10.sup.-6 or less in terms of .DELTA.n, and a birefringence of 5 nm/cm or less.
    Type: Grant
    Filed: August 5, 1994
    Date of Patent: June 4, 1996
    Assignee: Shin-Etsu Quartz Products Company Limited
    Inventors: Hiroyuki Nishimura, Akira Fujinoki, Toshikatsu Matsuya, Kyoichi Inaki, Toshiyuki Kato, Atsushi Shimada
  • Patent number: 5364433
    Abstract: A synthetic quartz glass optical member for an ultraviolet laser, suitably applicable as a stepper lens of a lithographer using an excimer laser beam and other optical members, wherein the quartz glass has a hydroxyl content of 10 to 100 ppm, a chlorine content of 200 ppm or less, a hydrogen content of 1.times.10.sup.16 molecules/cm.sup.3 or less, a homogeneity of refractive index of 5.times.10.sup.-6 or less in terms of .DELTA.n, and a birefringence of 5 nm/cm or less. The optical member can be produced by subjecting a volatile silicon compound to flame hydrolysis with oxyhydrogen flame, depositing the formed particulate silica on a heat-resistant support to prepare a porous silica matrix, heating the matrix in a vacuum as high as 1.times.10.sup.-2 Torr or above to a temperature of 1,400 .degree. C.
    Type: Grant
    Filed: May 15, 1993
    Date of Patent: November 15, 1994
    Assignee: Shin-Etsu Quartz Products Company Limited
    Inventors: Hiroyuki Nishimura, Akira Fujinoki, Toshikatsu Matsuya, Kyoichi Inaki, Toshiyuki Kato, Atsushi Shimada
  • Patent number: 4956208
    Abstract: A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.
    Type: Grant
    Filed: July 6, 1989
    Date of Patent: September 11, 1990
    Assignees: Shin-Etsu Handotai Co., Ltd., Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Uchikawa, Atsushi Iwasaki, Toshio Fukuoka, Mitsuo Matsumura, Hiroshi Matsui, Yasuhiko Sato, Masaaki Aoyama, Eiichi Shinomiya, Akira Fujinoki, Nobuyoshi Ogino
  • Patent number: 4935046
    Abstract: A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.
    Type: Grant
    Filed: December 1, 1988
    Date of Patent: June 19, 1990
    Assignees: Shin-Etsu Handotai Company, Limited, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Uchikawa, Atsushi Iwasaki, Toshio Fukuoka, Mitsuo Matsumura, Hiroshi Matsui, Yasuhiko Sato, Masaaki Aoyama, Eiichi Shinomiya, Akira Fujinoki, Nobuyoshi Ogino