Abstract: The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.

Abstract: The present invention provides a glass substrate including a glass sheet, a thin film containing silica as its main component, and a group of metal oxide particles separated from one another, the metal oxide particles and the thin film being stacked on the glass sheet in that order from the glass sheet side, wherein the average height of the metal oxide particles is 10 to 100 nm. The present invention also provides a method of manufacturing the glass substrate, the method including forming a group of metal oxide particles by a thermal decomposition method including an inorganic metal chloride as a raw material.

Abstract: A method of manufacturing a glass sheet with a thin film, having a titanium compound as its main component formed on the glass sheet, which is a manufacturing method preventing deterioration in quality of the thin film, such as incorporating an impurity or forming a pinhole and enables an excellent productivity, is provided. The method is a manufacturing method that supplies a coating film forming gas including a titanium containing compound, a nitrogen containing compound and an oxidizing gas, on a surface of a glass sheet or a glass ribbon in a process of manufacturing a glass sheet at a temperature equal to or higher than a predetermined temperature and forms a thin film having titanium oxynitride, nitrogen doped titanium oxide or titanium nitride as its main component on the surface.

Abstract: The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.

Abstract: The present invention provides a transparent substrate with a transparent conductive film that is thin but has a surface with concavities and convexities of increased height. A manufacturing method of the present invention includes a process of forming a transparent conductive film containing crystalline metal oxide as its main component on a transparent substrate by a pyrolytic oxidation method. In the method, a gaseous material containing a metal compound, an oxidizing material, and hydrogen chloride is supplied onto the transparent substrate. The process includes sequentially: a first step in which a mole ratio of the hydrogen chloride to the metal compound in the gaseous material is 0.5 to 5; and a second step in which the mole ratio is 2 to 10 and is higher than the mole ratio to be employed in the first step.

Abstract: The present invention provides a transparent conductive substrate having optical transparency and conductivity that have been improved in a well-balanced manner. The transparent conductive substrate of the present invention includes a transparent base and a conductive metal oxide film formed on the base. This metal oxide film contains tin and fluorine. In a profile of the metal oxide film determined in the depth direction by SIMS, the value obtained by subtracting the minimum Imin of the ratio of sensitivity of the fluorine to that of the tin from the maximum Imax thereof is at least 0.15. The maximum Imax is higher than 1 while the minimum Imin is lower than 1. Furthermore, the position where the maximum Imax is obtained is closer to the surface of the metal oxide film as compared to the position where the minimum Imin is obtained.

Abstract: The present invention provides a glass sheet formed on molten tin, that exhibits a high transmittance that is originally inherent to its composition. In this glass sheet, the difference between a visible light reflectance of a surface formed in contact with the molten tin and a visible light reflectance of a surface on the opposite side thereof is not greater than 0.25%. And when the glass sheet's thickness is 4 mm, a light transmittance at 540 nm wavelength is at least 91.5%, and a light transmittance at 450 nm wavelength is at least 91.0%, and after irradiating UV light for 6 hours as specified in the radiation-proofing test according to JIS R3212, a light transmittance at 540 nm wavelength is at least 91.0% and a light transmittance at 450 nm wavelength is at least 90.5%.

Abstract: A transparent conductive film wherein the height number distribution of projections present on the surface is expressed by a distribution function of X2 type having a degree of freedom of 3.5 to 15 when the unit of the horizontal axis is a nanometer, the height/width ratio number distribution is expressed by a distribution function of X2 type having a degree of freedom of 10-35X2, the projections having a height of 50-350 nm account for 70% of more, and the projections having a height/width ratio of 0.25-1.02 account for 90% or more.

Abstract: The present invention presents a method for forming a transparent conductive film whose principal component is tin oxide by so-called CVD on a glass ribbon, preventing the generation of giant crystal grains in the tin oxide, while ensuring that the concentration of carbon is low, or in other words, the absorption coefficient at 400 to 550 nm wavelength is low. In accordance with the invention, the method for forming a transparent conductive film whose principal component is tin oxide by CVD on a glass ribbon includes forming the transparent conductive film at a film deposition speed of 3000 to 7000 nm/min using a raw material gas including 0.5 to 2.0 mol % of an organic tin compound.

Abstract: The present invention provides a glass sheet with a conductive film, whose haze ratio is increased by use of irregularities of an undercoating film surface. This glass sheet with a conductive film includes an undercoating film including a layer containing a crystalline oxide as a main component and a conductive film containing a crystalline oxide as a main component, which are formed on a glass sheet in this order, and the haze ratio measured in a state in which the conductive film is removed is at least 0.2%.

Abstract: The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.

Abstract: The present invention provides a thin film-forming method by which, even when a thin film containing a crystalline metal oxide as the main component is formed over a wide area within a short time utilizing a thermal decomposition method, the thickness of the thin film becomes relatively uniform. A thin film-forming method of the present invention includes forming a thin film using a raw material containing a chloride of a metal, and prior to the forming of the thin film, 1) disposing metal-containing particles on the substrate, or 2) forming, at a film deposition rate slower than a film deposition rate for the thin film, a metal-containing thin film on the substrate, and wherein, in the case of the step 2), the thin film containing the metal oxide as the main component is directly formed on the metal-containing thin film.

Abstract: The present invention provides a glass substrate including a glass sheet, a thin film containing silica as its main component, and a group of metal oxide particles separated from one another, the metal oxide particles and the thin film being stacked on the glass sheet in that order from the glass sheet side, wherein the average height of the metal oxide particles is 10 to 100 nm. The present invention also provides a method of manufacturing the glass substrate, the method including forming a group of metal oxide particles by a thermal decomposition method including an inorganic metal chloride as a raw material.

Abstract: A transparent conductive film wherein the height number distribution of projections present on the surface is expressed by a distribution function of ?2 type having a degree of freedom of 3.5 to 15 when the unit of the horizontal axis is a nanometer, the height/width ratio number distribution is expressed by a distribution function of ?2 type having a degree of freedom of 10-35?2, the projections having a height of 50-350 nm account for 70% of more, and the projections having a height/width ratio of 0.25-1.02 account for 90% or more.

Abstract: The present invention provides a glass sheet formed on molten tin, that exhibits a high transmittance that is originally inherent to its composition. In this glass sheet, the difference between a visible light reflectance of a surface formed in contact with the molten tin and a visible light reflectance of a surface on the opposite side thereof is not greater than 0.25%. And when the glass sheet's thickness is 4 mm, a light transmittance at 540 nm wavelength is at least 91.5%, and a light transmittance at 450 nm wavelength is at least 91.0%, and after irradiating UV light for 6 hours as specified in the radiation-proofing test according to JIS R3212, a light transmittance at 540 nm wavelength is at least 91.0% and a light transmittance at 450 nm wavelength is at least 90.5%.

Abstract: The present invention presents a method for forming a transparent conductive film whose principal component is tin oxide by so-called CVD on a glass ribbon, preventing the generation of giant crystal grains in the tin oxide, while ensuring that the concentration of carbon is low, or in other words, the absorption coefficient at 400 to 550 nm wavelength is low. In accordance with the invention, the method for forming a transparent conductive film whose principal component is tin oxide by CVD on a glass ribbon includes forming the transparent conductive film at a film deposition speed of 3000 to 7000 nm/min using a raw material gas including 0.5 to 2.0 mol % of an organic tin compound.

Abstract: The present invention provides a substrate for a photoelectric conversion device contributing to enhance further the effect of trapping light into a photoelectric conversion layer. The substrate includes a first undercoating film containing at least one selected from tin oxide, titanium oxide, indium oxide and zinc oxide as a main component, a second undercoating film and a conductive film formed in this order on a glass sheet containing an alkali component. Concavities are formed in the surface of the second undercoating film, and the area ratio of the concavities is in the range of 20% to 50%.

Abstract: The present invention provides a glass sheet with a conductive film, whose haze ratio is increased by use of irregularities of an undercoating film surface. This glass sheet with a conductive film includes an undercoating film including a layer containing a crystalline oxide as a main component and a conductive film containing a crystalline oxide as a main component, which are formed on a glass sheet in this order, and the haze ratio measured in a state in which the conductive film is removed is at least 0.2%.

Abstract: A process facilitates manufacturing a multiple layer wiring board having therein a thin-film capacitor The process includes: forming a metallic film layer having a barrier metal layer and a metal layer to be sequentially anode oxidized on an insulating layer first conductor pattern; covering a lower electrode forming region of the thin film capacitor in the first conductor pattern with a first resist film; etching to remove an uncovered portion of the metallic film layer; removing the first resist film and covering the first conductor pattern, except for part of the metallic film layer, with a second resist film; forming an anodic oxidation film on the exposed metallic film layer; removing the second resist film and attaching an adherence layer and a metal seed layer, sequentially, on the anodic oxidation film end on the first conductor pattern; and forming an upper electrode second conductor pattern on the anodic oxidation film.

Abstract: A conductive film which is formed on a substrate, wherein a total of areas of the base surfaces of protrusions at least 250 nm in height is at least 5% of the area of a surface on which this conductive film is formed. The conductive film mainly contains at least one kind of compound out of tin oxide, titanium oxide, indium oxide and zinc oxide, and is formed on a transparent substrate by a chemical vapor deposition using an oxygen atom-containing material as vapor. A photoelectric conversion device is formed by a conductive film-carrying substrate and at least one photoelectric conversion layer disposed on the substrate and containing a crystalline silicon thin film 1-5 &mgr;m in thickness.