Abstract: A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

Abstract: The present invention provides a packaged stacked semiconductor device which includes bumps serving as external electrode terminals, the bumps being provided on both a front surface and a back surface of the device, and which is sacked on another semiconductor device, substrate, or board having electrode terminals so that the bumps are directly and electrically connected to the electrode terminals. The semiconductor device includes a semiconductor substrate having through-electrodes formed therein. The semiconductor device has, on the front surface side of the semiconductor substrate, a wiring layer connected to the through-electrodes, an insulating film formed on the wiring layer, additional wiring formed on the insulating film, post electrodes connected to the wiring, and external connection bumps connected to the post electrodes.

Abstract: The substrate processing apparatus includes a first etching mode and a second etching mode. In the first etching mode, a first nozzle is positioned at a first processing position and a chemical solution is supplied from the first nozzle to a top rim portion of the rotating substrate. In the second etching mode, a second nozzle is positioned at a second processing position and DIW is supplied to the top rim portion to which the chemical solution adheres, while the chemical solution is supplied from the first nozzle positioned at the first processing position to the top rim portion of the rotating substrate. The etching mode is selectively switched between the two etching modes in accordance with a property of the thin film adhering to the substrate.

Abstract: Above a wafer which is held by a spin chuck, a blocking member whose opposed surface to the wafer is approximately horizontal is disposed at a higher position than an organic solvent component supplying outlet which is able to move from a central position of the wafer toward the periphery of the wafer. An organic solvent component nozzle scans (moves) together with the blocking member, thereby efficiently supplying a gas containing an organic solvent component discharged from the organic solvent component supplying outlet onto a surface of the wafer without getting discharged from the vicinity of the surface of the wafer owing to the blocking member. Hence, when the organic solvent component nozzle scans (moves), the concentration of the organic solvent component is always high near the organic solvent component supplying outlet.

Abstract: After rinsing, while rotating a substrate, a front layer part of a rinsing liquid (DIW) adhering to a substrate surface is drained and removed from the substrate surface. This is followed by supply to the substrate surface of a liquid mixture which is obtained by mixing IPA and DIW together. Since a majority of the rinsing liquid on the substrate surface is removed off from the substrate surface, even when micro patterns are formed on the substrate surface, the liquid mixture replaces the liquid component adhering to the gaps between the patterns. Further, the IPA concentration in the liquid mixture supplied to the substrate surface is set to 50% or below.

Abstract: A substrate on the surface of which the liquid film is formed in a cleaning unit is transported to a freezing unit by a substrate transporting mechanism. The liquid film is frozen in the freezing unit and the volume of the liquid film increases. Accordingly, adhesive forces between the substrate and the particles are reduced and the particles even come to separate from the substrate surface. Then the substrate which has been processed freezing is transported from the freezing unit to the cleaning unit again by the substrate transporting mechanism. In the cleaning unit, a physical and/or chemical cleaning is executed to the substrate, and the frozen film is removed from the substrate surface. Thus, the liquid film formation and the freezing of the liquid film is performed as a preprocessing of the physical and/or chemical cleaning in this way, whereby the particles are removed from the substrate surface efficiently.

Abstract: Substrates having liquid films with preprocessing liquid on surfaces thereof in a preprocessing unit are transported to a freezing unit arranged separately from the preprocessing unit by a substrate transporting robot. In the freezing unit, the substrates are accommodated in a processing space in a processing chamber and the liquid films are frozen by decreasing the temperature of the processing space to a temperature below the freezing point of the preprocessing unit. Subsequently, the substrates subjected to the freezing process are transported from the freezing unit to a post-processing unit arranged separately from the freezing unit. In the post-processing unit, cleaning liquid is supplied to frozen films, whereby contaminants having adhesive forces to the substrate reduced by the freezing process can be easily removed together with the frozen film.

Abstract: A gas inlet is disposed in a lower portion of a reaction chamber, a copper substrate is disposed in an upper portion thereof, and a tungsten catalytic body heated to 1600° C. is disposed midway between the two. Ammonia gas introduced from the gas inlet is decomposed by the tungsten catalytic body, a chemical species generated by the decomposition reacts with a surface of the copper substrate, and reduces and removes a contaminant on the copper surface, and a Cu3N thin film is formed on the copper substrate surface. This Cu3N film has the action of a film which prevents the oxidation of copper. This Cu3N film is thermally decomposed and removed when heated to temperatures of not less than 300° C., leaving a clean copper surface behind.

Abstract: A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

Abstract: A substrate having a liquid film formed by pre-processing unit is transported by a substrate transport robot from the pre-processing unit to a freeze processing unit disposed away from the pre-processing unit. In the freeze-processing unit, the liquid film is frozen. This causes the adhesion power of contaminants adhering to the surface of the substrate reduce, and therefore the contaminants is detached from the surface of the substrate. Subsequently, the substrate which was subjected to the freezing process, is transported from the freeze processing unit to a post-processing unit which is disposed away from the pre-processing unit and the freeze processing. In the post-processing unit, a cleaning liquid is supplied to the frozen film on the rotating substrate, thereby easily removing the contaminants adhering to the substrate together with the frozen film.

Abstract: Disclosed is a substrate processing method including a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber; a peripheral edge processing step for discharging a processing liquid to a lower surface of the substrate rotated in the substrate rotating step and causing the processing liquid to flow around an upper surface of the substrate at a peripheral edge thereof from the lower surface of the substrate to process the peripheral edge of the upper surface of the substrate in the chamber; and a both-surface processing step for discharging the processing liquid to both the surfaces of the substrate rotated in the substrate rotating step to process both the surfaces of the substrate in the chamber.

Abstract: Disclosed is a substrate processing method including a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber; a peripheral edge processing step for discharging a processing liquid to a lower surface of the substrate rotated in the substrate rotating step and causing the processing liquid to flow around an upper surface of the substrate at a peripheral edge thereof from the lower surface of the substrate to process the peripheral edge of the upper surface of the substrate in the chamber; and a both-surface processing step for discharging the processing liquid to both the surfaces of the substrate rotated in the substrate rotating step to process both the surfaces of the substrate in the chamber.

Abstract: A blocking plate 3 is disposed opposing a substrate W which is held by plural chuck pins 17 and a processing liquid is supplied from a processing liquid nozzle 5 to a space SP between the front surface Wf of the substrate and an opposed surface 3a of the blocking plate 3, whereby the processing liquid attains the liquid-tight state. While the liquid-tight state with the processing liquid is maintained, the substrate W and the blocking plate 3 rotate. In this condition, a liquid (pure water) to which ultrasonic vibration has propagated is injected from an ultrasonic nozzle 7 approximately perpendicular to a side wall surface 3b of the blocking plate 3. While the ultrasonic vibration spreads inside the blocking plate 3 along the horizontal direction, some vibrational waves spread uniformly and widely from the opposed surface 3a to the processing liquid attaining the liquid-tight state and vibrate the processing liquid.

Abstract: A first gas nozzle and a second gas nozzle are fixedly provided in the vicinity of the forward end of a nozzle arm. The nozzle arm is rotated along a locus R while a substrate rinsed with deionized water is rotated, for discharging nitrogen gas from the first and second gas nozzles. Visible moisture is loosely expelled from the upper surface of the substrate by spraying the nitrogen gas from the first gas nozzle, and moisture slightly remaining on a fine pattern or the like can also be completely removed by spraying the nitrogen gas from the second gas nozzle to the same region of the substrate as that sprayed with the nitrogen gas by the first gas nozzle. Consequently, the surface of the substrate can be stably and reliably dried. Thus, a substrate processing apparatus capable of stably and reliably drying the surface of the substrate is provided.

Abstract: A first gas nozzle and a second gas nozzle are fixedly provided in the vicinity of the forward end of a nozzle arm. The nozzle arm is rotated along a locus R while a substrate rinsed with deionized water is rotated, for discharging nitrogen gas from the first and second gas nozzles. Visible moisture is loosely expelled from the upper surface of the substrate by spraying the nitrogen gas from the first gas nozzle, and moisture slightly remaining on a fine pattern or the like can also be completely removed by spraying the nitrogen gas from the second gas nozzle to the same region of the substrate as that sprayed with the nitrogen gas by the first gas nozzle. Consequently, the surface of the substrate can be stably and reliably dried. Thus, a substrate processing apparatus capable of stably and reliably drying the surface of the substrate is provided.

Abstract: A protective film is formed on a surface of a semiconductor device corresponding to at least a portion that is not to be disordered, by arranging a heat source on a path through which a precursor of the protective film to be formed passes, to cause a decomposition reaction of the precursor in the presence of the heat source, and by exposing the surface of the semiconductor device to the atmosphere after the decomposition reaction. A portion to be disordered is disordered using a thermal treatment.

Abstract: Nitrogen is dissolved in pure water and hydrochloric acid is mixed in this nitrogen-dissolved pure water, thereby creating as a rinsing liquid a mixture liquid whose pH is lower than that of pure water, and thus created rinsing liquid is supplied at nozzles 6 and 25 toward a substrate W. In the case of such a rinsing liquid, the dissolved oxygen concentration in the rinsing liquid is lowered, and it is possible to suppress a rapid increase of the dissolved oxygen concentration in the rinsing liquid as it is immediately after injected at the nozzles 6 and 25. Also suppressed is elution of Si from the surfaces of the substrate.

Abstract: A pure water supplier is connected with an inlet of the nitrogen dissolving unit. Further, there is another inlet formed in the nitrogen dissolving unit, and this inlet is connected with a nitrogen gas supply source. Nitrogen gas from the nitrogen gas supply source is dissolved in pure water supplied from the pure water supplier, thereby producing nitrogen-rich pure water. Thus nitrogen-rich rinsing liquid is produced immediately prior to rinsing. This reduces the concentration of dissolved oxygen in the rinsing liquid. This also slows down an increase of the concentration of dissolved oxygen in the rinsing liquid which has been discharged at a nozzle.

Abstract: Particles adhering to the surface of a substrate are removed by physical action of injection of droplets or megasonic vibrations or by combination of the physical action and slight etching on the surface of the substrate. On the other hand, metal contaminants adhering to the surface of the substrate are altered to hydroxides with an alkaline solution and thereafter dissolved with an acid solution to be removed. Thus, it is possible to rapidly process the substrate while minimizing the quantity of etching on the surface of the substrate.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.