Abstract: According to one embodiment, a magnetic sensor includes a first element, a first wire, and a first magnetic part. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first counter magnetic layer. A direction from the first counter magnetic layer toward the first magnetic layer is along a first direction. The first wire extends in a second direction crossing the first direction. The first magnetic part includes a first region and a first counter region. At least a portion of the first wire is between the first region and the first counter region in the first direction.

Abstract: According to one embodiment, a magnetic sensor includes a first element part. The first element part includes a first magnetic element, a first conductive member, a first magnetic member, and a second magnetic member. The first magnetic element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first counter magnetic layer. A direction from the first magnetic layer toward the first counter magnetic layer is along a first direction. The second magnetic member is separated from the first magnetic member along a second direction crossing the first direction. The first magnetic element includes a first element region, a first other-element region, and a first intermediate element region. The first magnetic member includes a first partial surface and a second partial surface.

Abstract: According to one embodiment, a magnetic sensor includes a sensor part, a first circuit, and a second circuit. The sensor part includes a magnetic element part, first and second conductive members. The magnetic element part includes first to fourth magnetic elements. The first conductive member includes first to third conductive portions, and first and second middle portions. The second conductive member includes fourth to sixth conductive portions, and third and fourth middle portions. The first circuit is electrically connected to the third and sixth conductive portions. The first circuit is configured to supply a first current between the third and sixth conductive portions. The second circuit is electrically connected to a first connection point and a second connection point. The second circuit is electrically connected to first and second connection points. The second circuit is configured to supply a second current between the first and second connection points.

Abstract: According to one embodiment, a magnetic sensor includes a first conductive part circuit, an alternating current circuit part, a first direct current circuit part, and a first element. The first conductive part circuit includes a first conductive part including a first conductive part end portion and a first conductive part other-end portion, and a first alternating current transfer element electrically connected in series with the first conductive part. The first conductive part circuit includes a first circuit end portion and a first circuit other-end portion. The alternating current circuit part is configured to apply an alternating current voltage between the first circuit end portion and the first circuit other-end portion. The first direct current circuit part is configured to apply a first direct current voltage to the first conductive part end portion and the first conductive part other-end portion. The first element includes a first magnetic layer.

Abstract: According to one embodiment, a magnetic sensor includes a first magnetic part, a first magnetic member, a second magnetic part, a second magnetic member, a first element, a second element, a third element, a fourth element, and a first interconnect. The first magnetic part includes first, second, and third portions. The first portion is between the second and third portions. The second magnetic part includes fourth, fifth, and sixth portions. The fourth portion is between the fifth and sixth portions. The first element includes a first magnetic layer. The second element includes a second magnetic layer. The third element includes a third magnetic layer. The fourth element includes a fourth magnetic layer. The first interconnect includes first and second interconnect portions.

Abstract: According to one embodiment, a magnetic sensor includes a first element. The first element includes a first magnetic part, a first magnetic layer, a first nonmagnetic portion, and a first intermediate magnetic layer. The first magnetic part includes first to third portions. The first portion is between the second and third portions. The first portion has a first length and a second length. The second portion has at least one of a third length longer than the first length or a fourth length longer than the second length. The third portion has at least one of a fifth length longer than the first length or a sixth length longer than the second length. The first nonmagnetic portion is provided between the first portion and the first magnetic layer. The first intermediate magnetic layer is provided between the first portion and the first nonmagnetic portion.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than ½ times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.

Abstract: According to one embodiment, a magnetic sensor includes a first element. The first element includes a first magnetic part, a first magnetic layer, a first nonmagnetic portion, and a first intermediate magnetic layer. The first magnetic part includes first to third portions. The first portion is between the second and third portions. The first portion has a first length and a second length. The second portion has at least one of a third length longer than the first length or a fourth length longer than the second length. The third portion has at least one of a fifth length longer than the first length or a sixth length longer than the second length. The first nonmagnetic portion is provided between the first portion and the first magnetic layer. The first intermediate magnetic layer is provided between the first portion and the first nonmagnetic portion.

Abstract: According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.

Abstract: According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.

Abstract: According to one embodiment, a sensor includes a nonmagnetic layer and a plurality of magnetic field sensors. The nonmagnetic layer has a first surface and a second surface. The magnetic field sensors are arranged along the second surface. The second surface is between the first surface and the magnetic field sensors. Each of the magnetic field sensors includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the nonmagnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The intermediate layer is nonmagnetic. A distance between the first surface and the second magnetic layer is not more than a pitch of the magnetic field sensors.

Abstract: According to one embodiment, a magnetic sensor includes first and second elements, first and second interconnects, a first circuit portion electrically connected to the first and second interconnects and a second circuit portion electrically connected to the first and second elements. The first circuit portion supplies a first alternating current to the first interconnect and supplies a second alternating current to the second interconnect. The second circuit portion supplies a first element current to the first element and supplies a second element current to the second element. At a first time, the first alternating current has a first alternating current orientation, and the second alternating current has a second alternating current orientation. At a second time, the first alternating current has an opposite orientation to the first alternating current orientation, and the second alternating current has an opposite orientation to the second alternating current orientation.

Abstract: According to one embodiment, a magnetic sensor includes a first element, a first wire, and a first magnetic part. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first counter magnetic layer. A direction from the first counter magnetic layer toward the first magnetic layer is along a first direction. The first wire extends in a second direction crossing the first direction. The first magnetic part includes a first region and a first counter region. At least a portion of the first wire is between the first region and the first counter region in the first direction.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than ½ times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.

Abstract: According to one embodiment, an electronic device includes first to third members, first and second elements. The second member is between the first and third members. The first element is between the first and second members. The second element is between the second and third members. The first member includes first nonmagnetic layers and a first magnetic layer. The first magnetic layer is provided between one of the first nonmagnetic layers and an other one of the first nonmagnetic layers. The second member includes second nonmagnetic layers and a second magnetic layer. The second magnetic layer is provided between one of the second nonmagnetic layers and an other one of the second nonmagnetic layers. The third member includes third nonmagnetic layers and a third magnetic layer. The third magnetic layer is provided between one of the third nonmagnetic layers and an other one of the third nonmagnetic layers.

Abstract: According to one embodiment, an electronic device includes first to third members, first and second elements. The second member is between the first and third members. The first element is between the first and second members. The second element is between the second and third members. The first member includes first nonmagnetic layers and a first magnetic layer. The first magnetic layer is provided between one of the first nonmagnetic layers and an other one of the first nonmagnetic layers. The second member includes second nonmagnetic layers and a second magnetic layer. The second magnetic layer is provided between one of the second nonmagnetic layers and an other one of the second nonmagnetic layers. The third member includes third nonmagnetic layers and a third magnetic layer. The third magnetic layer is provided between one of the third nonmagnetic layers and an other one of the third nonmagnetic layers.

Abstract: A semiconductor device including a semiconductor element and a first member is provided. The first member includes a first magnetic planar region separated from the semiconductor element in a first direction, and a first nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. At least a portion of the first magnetic planar region includes Fe100-x1-x2?x1Nx2, where ? includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al, x1 is not less than 0.5 atomic percent and not more than 10 atomic percent, and x2 is not less than 0.5 atomic percent and not more than 8 atomic percent.