Abstract: According to one embodiment, a magnetic sensor includes first and second elements, first and second interconnects, a first circuit portion electrically connected to the first and second interconnects and a second circuit portion electrically connected to the first and second elements. The first circuit portion supplies a first alternating current to the first interconnect and supplies a second alternating current to the second interconnect. The second circuit portion supplies a first element current to the first element and supplies a second element current to the second element. At a first time, the first alternating current has a first alternating current orientation, and the second alternating current has a second alternating current orientation. At a second time, the first alternating current has an opposite orientation to the first alternating current orientation, and the second alternating current has an opposite orientation to the second alternating current orientation.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.

Abstract: An inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first magnetic planar region separated from the semiconductor element in a first direction, and a first nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. At least a portion of the first magnetic planar region includes Fe1-x1-x2?x1Nx2. ? includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al. x1 is not less than 0.5 atomic percent and not more than 10 atomic percent. x2 is not less than 0.5 atomic percent and not more than 8 atomic percent.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.

Abstract: According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.

Abstract: In one embodiment, a magnetic sensor has first and second electrode, a magneto-resistive effect element, an insulating layer between the first electrode and the element, a current source portion and a detecting portion. The element has a length in a first direction along a film surface of the element which is larger than that in a second direction along the film surface and perpendicular to the first direction. The element includes first, non-magnetic and second magnetic layers. The magnetization direction of the first magnetic layer is along the first direction. The element is connected to the first and second electrodes. The current source portion is connected to the first and second electrodes. The detecting portion can detect a second harmonic component in an output signal of the element. The first electrode and the element overlap each other in a third direction perpendicular to the first and the second directions.

Abstract: In one embodiment, a first magnetoresistive effect element, a current supply unit and a detecting unit is provided. The first magnetoresistive effect element is provided between first and second electrodes and along a first direction which is a current flowing direction between the first and the second electrode. The first magnetoresistive effect element includes first and second magnetic layers and a first intermediate layer provided between the first and the second magnetic layer and along the first direction and a second direction orthogonal to the first direction. The current supply unit is connected to the first and the second electrode and can supply an alternating current. The detecting unit detects a second harmonic component of an alternating current voltage signal outputted from the first magnetoresistive effect element. A length of the first magnetoresistive effect element in the first direction is larger than a length in the second direction.

Abstract: A magnetic recording and reproducing device according to an embodiment includes a magnetic recording medium and a controller. The magnetic recording medium includes in sequence a substrate, a storage layer, an exchange layer, and a surface recording layer. The controller executes following steps (1) to (6): (1) magnetically recording first information on the surface recording layer; (2) transferring the first information recorded on the surface recording layer to the storage layer; (3) magnetically recording second information on the surface recording layer; (4) magnetically reproducing the second information from the surface recording layer; (5) transferring the first information recorded on the storage layer to the surface recording layer; and (6) magnetically reproducing the first information transferred to the surface recording layer.

Abstract: According to one embodiment, an inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a sensor includes a nonmagnetic layer and a plurality of magnetic field sensors. The nonmagnetic layer has a first surface and a second surface. The magnetic field sensors are arranged along the second surface. The second surface is between the first surface and the magnetic field sensors. Each of the magnetic field sensors includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the nonmagnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The intermediate layer is nonmagnetic. A distance between the first surface and the second magnetic layer is not more than a pitch of the magnetic field sensors.

Abstract: An inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: A magnetic sensor of an embodiment includes: a magnetic field detector including a magnetic layer in which a length in a first direction is 10 times or more of a length in a second direction perpendicular to the first direction and a length in a third direction perpendicular to the first direction and the second direction is ½ or less of the length in the second direction; a first magnetic material member arranged along the first direction, and in which a length in the third direction is longer than the length in the third direction of the magnetic layer; a first nonmagnetic insulating layer arranged between the magnetic field detector and the first magnetic material member, and in which a length in the second direction is ½ or less of the length in the second direction of the magnetic layer; and a circuit supplying current to the magnetic layer.

Abstract: A magnetic sensor according to an embodiment includes: a magneto-resistive film including a laminate structure, the laminate structure including a first magnetic layer, a second magnetic layer, and an intermediate layer arranged between the first magnetic layer and the second magnetic layer; and a pair of electrodes for supplying current in a first direction perpendicular to a laminate direction of the magneto-resistive film, wherein the second magnetic layer includes an amorphous magnetic layer, and a crystalline magnetic layer arranged between the amorphous magnetic layer and the intermediate layer, and a length of a current path of the magneto-resistive film is 10 ?m or more.

Abstract: In one embodiment, there are provided: a substrate; a data area disposed on the substrate and having a plurality of first magnetic dots arrayed in lines in mutually different first, second, and third directions; and a boundary magnetic part having a plurality of first magnetic portions arrayed in a line in the third direction and each having a length longer than that of the first magnetic dot in the third direction, and a second magnetic dot disposed between the first magnetic portions and disposed on extensions in the first and second directions of the first magnetic dots, and disposed along with the data area on the substrate.

Abstract: An example magnetic recording device includes a magnetic recording section and a magnetization oscillator and a first nonmagnetic layer disposed between the magnetic recording section and the magnetization oscillator. The magnetic recording section includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; and a second nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. The magnetization oscillator includes a third ferromagnetic layer with a variable magnetization direction; a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction; and a third nonmagnetic layer disposed between the third ferromagnetic layer and the fourth ferromagnetic layer.

Abstract: A magnetic recording and reproducing device according to an embodiment includes a magnetic recording medium and a controller. The magnetic recording medium includes in sequence a substrate, a storage layer, an exchange layer, and a surface recording layer. The controller executes following steps (1) to (6): (1) magnetically recording first information on the surface recording layer; (2) transferring the first information recorded on the surface recording layer to the storage layer; (3) magnetically recording second information on the surface recording layer; (4) magnetically reproducing the second information from the surface recording layer; (5) transferring the first information recorded on the storage layer to the surface recording layer; and (6) magnetically reproducing the first information transferred to the surface recording layer.

Abstract: A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body.

Abstract: A stamper of an embodiment includes: a base portion having a main surface; and a plurality of guides arranged on the main surface in mutually different first and second directions and serving as references of arrangement of a plurality of self-assembled dots. A distance between the guides in a third direction is within a range of an integer m1 ±0.05 times of a pitch of the plural self-assembled dots. The third direction corresponds to a third vector obtained by combining a first vector corresponding to the arrangement of the guides in the first direction and a second vector corresponding to the arrangement of the guides in the second direction. A distance between the plural guides in the first direction falls out of a range of an integer m2 ±0.15 times of the pitch of the plural self-assembled dots.

Abstract: In one embodiment, there are provided: a substrate; a data area disposed on the substrate and having a plurality of first magnetic dots arrayed in lines in mutually different first, second, and third directions; and a boundary magnetic part having a plurality of first magnetic portions arrayed in a line in the third direction and each having a length longer than that of the first magnetic dot in the third direction, and a second magnetic dot disposed between the first magnetic portions and disposed on extensions in the first and second directions of the first magnetic dots, and disposed along with the data area on the substrate.