Abstract: The present invention relates to a friction member comprising a friction material and a back metal, wherein the friction material comprises no copper, or has a copper content of less than 0.5% by mass in terms of a copper element even if the friction material comprises copper, the friction material comprises magnesium oxide and a carbon material comprising graphite and coke, the carbon material is obtained by blending in a combination of a coarse-grained material and a fine-grained material, an average particle diameter of the coarse-grained material is 100 to 600 ?m, and an average particle diameter of the fine-grained material is less than 100 ?m.

Abstract: The present invention relates to a friction member comprising a friction material and a back metal, wherein the friction material comprises no copper, or has a copper content of less than 0.5% by mass in terms of a copper element even if the friction material comprises copper, the friction material comprises magnesium oxide and a carbon material comprising graphite and coke, the carbon material is obtained by blending in a combination of a coarse-grained material and a fine-grained material, an average particle diameter of the coarse-grained material is 100 to 600 ?m, and an average particle diameter of the fine-grained material is less than 100 ?m.

Abstract: A surface treatment agent including: a silylating agent and a solvent, the solvent containing an aliphatic hydrocarbon.

Abstract: A surface treatment agent capable of effectively preventing pattern collapse of an inorganic pattern or a resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent includes a silylation agent and a nitrogen-containing heterocyclic compound which does not include a silicon atom.

Abstract: To provide a surface treatment method capable of highly hydrophobizing (silylating) a surface of a treatment target while deterioration of polyvinyl chloride is suppressed when surface treatment of the treatment target such as an inorganic pattern and a resin pattern is carried out using a device having a liquid contact portion provided with a member made of polyvinyl chloride, and also provide a surface treatment liquid suitably used for the surface treatment method. A surface treatment liquid used for the surface treatment method includes a silylating agent (A) and a solvent (S), the silylating agent (A) does not have an alkoxy group bonded to a silicon atom, and the solvent (S) does not have a hydroxyl group bonded to a carbon atom. A value of dH in Hansen solubility parameters (HSP) in the solvent (S) is 3.2 MPa1/2 or less or 10.5 MPa1/2 or more. Relative Energy Difference represented by Ra/R0 is 1.

Abstract: A process removes metal impurities from an untreated chemical liquid, which includes a silylating agent. The process includes providing a strongly acidic cation-exchange resin in which a cation-exchange group is immobilized to a resin membrane or an integral structure of a particle-removing membrane and an ion exchange resin membrane in which a strongly acidic cation-exchange resin has been chemically introduced onto surfaces of pores in a porous resin. The wettability of the ion exchange resin membrane is thereafter improved by contacting the ion-exchange resin membrane with an organic solvent. The metal impurities are then removed from the untreated chemical liquid by passing the untreated chemical liquid through the ion-exchange resin membrane.

Abstract: A film-forming material including a metal oxide such as a SiO2 film on the surface of a substrate, in which foreign substances, such as fine particles, are generated with difficulty while being stored, and a method for forming a film, in which the method includes forming a film on the surface of a substrate using the film-forming material. The film-forming material includes a metal compound capable of generating a hydroxyl group upon hydrolysis dissolved in an organic solvent that does not have a functional group that reacts with the metal compound. The organic solvent includes a solvent having a value of Log P of from 0 to 3.5.

Abstract: A surface treatment liquid that can effectively prevent pattern collapse of, in particular, a silicon pattern and a surface treatment process using the surface treatment liquid. The surface treatment liquid contains a water repellent agent and an acid imide. The surface treatment process includes exposing a surface of a substrate to the surface treatment liquid to thereby hydrophobize the substrate surface.

Abstract: A surface treatment agent capable of effectively preventing pattern collapse of an inorganic pattern or a resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent includes a silylation agent and a nitrogen-containing heterocyclic compound which does not include a silicon atom.

Abstract: A surface treatment liquid that can effectively prevent pattern collapse of, in particular, a silicon pattern and a surface treatment process using the surface treatment liquid. The surface treatment liquid contains a water repellent agent and an acid imide. The surface treatment process includes exposing a surface of a substrate to the surface treatment liquid to thereby hydrophobize the substrate surface.

Abstract: A process for preparing a chemical liquid of a silylating agent that has a reduced metal impurity concentration, and a surface treatment method using a chemical liquid of a silylating agent obtained by the preparation process. The process includes reducing metal impurities contained in an untreated chemical liquid of a silylating agent using an ion-exchange resin membrane that has been brought into contact with an organic solvent in advance. A surface treatment method that hydrophobizes a substrate surface includes exposing, to the substrate surface, a chemical liquid of a silylating agent obtained by the above process for preparing a chemical liquid of a silylating agent.

Abstract: A method for modifying a substrate surface using a silylating agent that is capable of successfully modifying the substrate surface regardless of the substrate material; a modifying film which successfully adheres to a substrate surface regardless of the material of the substrate and provides a substrate that is surface-modified to a desired extent; and a coating solution which is capable of forming a coating film on a substrate surface. A silane compound layer is formed on the surface of the coating film by a silylating agent and is firmly affixed thereto. The surface of a substrate is treated with a metal compound that is capable of producing a hydroxyl group by hydrolysis. The substrate surface which has been treated with the metal compound is then treated with a silylating agent.

Abstract: A film-forming material including a metal oxide such as a SiO2 film on the surface of a substrate, in which foreign substances, such as fine particles, are generated with difficulty while being stored, and a method for forming a film, in which the method includes forming a film on the surface of a substrate using the film-forming material. The film-forming material includes a metal compound capable of generating a hydroxyl group upon hydrolysis dissolved in an organic solvent that does not have a functional group that reacts with the metal compound. The organic solvent includes a solvent having a value of Log P of from 0 to 3.5.

Abstract: A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.

Abstract: The present invention provides an unbaked laminate for producing a front plate (1) of a plasma display device, and a method for producing such a front plate (1). The laminate includes a burnable intermediate layer (14), and may include an unbaked dielectric layer (12A) and a photosensitive unbaked spacer material layer (16A). The burnable intermediate layer (14) positions between the dielectric layer (12) and the spacer material layer (16), and may burn up upon baking treatment, enabling removal of residues of the spacer material layer in the region subjected to its removal.

Abstract: A composition for a dielectric of a plasma display panel laminating a plurality of layers, includes: a lower layer composition containing inorganic powder and a binder resin, an upper layer composition containing inorganic powder, a binder resin, a photopolymerizable monomer and a photopolymerization initiator, the upper layer composition being provided above the lower layer, and an intermediate layer composition containing a thermally decomposable resin, the intermediate layer composition being provided between the lower layer and the upper layer.

Abstract: A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid.

Abstract: Disclosed is a photoresist stripping solution comprising: (a) a salt of hydrofluoric acid with a base free from metallic ions; and (b) a water-soluble organic solvent, wherein the content of the component (a) is 0.001 to 0.1 mass % based on the total mass of the photoresist stripping solution. Also disclosed is a method of treating a substrate, which comprises: forming a photoresist film on a substrate; subjecting it to light exposure and then to development; etching thereof with a photoresist pattern as a mask pattern; ashing the mask; and bringing the photoresist stripping solution into contact with the substrate.