Abstract: A fuel pump includes a pump portion for pumping fuel. The fuel pump further includes a magnet having magnetic poles circumferentially alternate with each other. The fuel pump further includes an armature on a radially inside of the magnet. The armature includes a rotor core provided with a coil formed of a wire. The armature is rotatable for driving the pump portion. A commutator, which is in a substantially disc shape, is provided to an axial end of the armature for rectifying electricity supplying to the coil. The rotor core has an axial end having an outer circumferential periphery defining a commutator-side collar portion extending toward the commutator. The coil is formed by winding the wire between an outer circumferential periphery of the commutator and the commutator-side collar portion.

Abstract: The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.

Abstract: A fuel pump includes a pump portion for pumping fuel. The fuel pump further includes a magnet having magnetic poles circumferentially alternate with each other. The fuel pump further includes an armature on a radially inside of the magnet. The armature includes a rotor core provided with a coil formed of a wire. The armature is rotatable for driving the pump portion. A commutator, which is in a substantially disc shape, is provided to an axial end of the armature for rectifying electricity supplying to the coil. The rotor core has an axial end having an outer circumferential periphery defining a commutator-side collar portion extending toward the commutator. The coil is formed by winding the wire between an outer circumferential periphery of the commutator and the commutator-side collar portion.

Abstract: A fuel pump includes a pump portion for pumping fuel. The fuel pump further includes a magnet having magnetic poles circumferentially alternate with each other. The fuel pump further includes an armature on a radially inside of the magnet. The armature includes a rotor core provided with a coil formed of a wire. The armature is rotatable for driving the pump portion. A commutator, which is in a substantially disc shape, is provided to an axial end of the armature for rectifying electricity supplying to the coil. The rotor core has an axial end having an outer circumferential periphery defining a commutator-side collar portion extending toward the commutator. The coil is formed by winding the wire between an outer circumferential periphery of the commutator and the commutator-side collar portion.

Abstract: The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage. An insulated gate semiconductor device 100 includes a cell area through which current flows and an terminal area which surrounds the cell area. The semiconductor device 100 also has a plurality of gate trenches 21 in the cell area and a plurality of terminal trenches 62 in the terminal area. The gate trenches 21 are formed in a striped shape, and the terminal trenches 62 are formed concentrically. In the semiconductor device 100, the gate trenches 21 and the terminal trenches 62 are positioned in a manner that spacings between the ends of the gate trenches 21 and the side of the terminal trench 62 are uniform. That is, the length of the gate trenches 21 is adjusted according to the curvature of the corners of the terminal trench 62.

Abstract: The invention is intended to present an insulated gate type semiconductor device that can be manufactured easily and its manufacturing method while realizing both higher withstand voltage design and lower on-resistance design. The semiconductor device comprises N+ source region 31, N+ drain region 11, P? body region 41, and N? drift region 12. By excavating part of the upper side of the semiconductor device, a gate trench 21 is formed. The gate trench 21 incorporates the gate electrode 22. A P floating region 51 is provided beneath the gate trench 21. A further trench 35 differing in depth from the gate trench 21 may be formed, a P floating region 54 being provided beneath the trench 25.

Abstract: A hot-air supply structure (1) comprises a hot air generator (20) and a housing (15) formed in the neighborhood of a hot-air inlet (81) of a molded component M in a die (10). A nozzle (21) is formed at the forward end of the hot-air generator, and an ejection port (211b) is formed on the side wall portion of the forward end needle unit (211) of the nozzle. The housing includes a support hole (151) in the nozzle, a relief hole (152), a flow path communication passage (153) and a bypass (154). The ejection port is movable between a first position to discharge the cool or warm air into the atmosphere through the bypass from the relief hole and a second position to introduce hot air into the flow path (8) of the molded component through the inlet (81) and the passage (153).

Abstract: The change-over device changes over, to one of three passages, between the runner groove connected to the injection nozzle and the communicating groove communicated with the mold side passage. At the first position, the second passage 372 is communicated with the communicating groove and the temperature of a flow of hot air is measured by the thermocouple and the flow is discharged into the atmosphere. At the second position, the runner groove and the communicating groove are communicated with each other when the runner groove and the communicating groove are open to the second passage 371 and resin material is injected into the mold. At the third position, the material in the injection passage and the material in the runner groove are deposited to each other when the injection passage is shut off from the communicating passage and the third passage 374 is communicated with the runner groove.

Abstract: The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.

Abstract: A trench-gate type transistor has a gate insulating film formed on an inner wall of a trench. The gate insulating film includes a first portion located on a wall of the trench and a second portion located on upper and bottom portions of the trench. The first portion includes a first oxide film, a nitride film, and a second oxide film. The second portion includes only an oxide film and is thicker than the first portion. Accordingly, electric field concentration on upper and lower corner portions of the trench can be reduced to improve the withstand voltage. In addition, and end of the trench may have an insulation layer that is thicker than the first portion.

Abstract: A fuel pump includes a pump portion for pumping fuel. The fuel pump further includes a magnet having magnetic poles circumferentially alternate with each other. The fuel pump further includes an armature on a radially inside of the magnet. The armature includes a rotor core provided with a coil formed of a wire. The armature is rotatable for driving the pump portion. A commutator, which is in a substantially disc shape, is provided to an axial end of the armature for rectifying electricity supplying to the coil. The rotor core has an axial end having an outer circumferential periphery defining a commutator-side collar portion extending toward the commutator. The coil is formed by winding the wire between an outer circumferential periphery of the commutator and the commutator-side collar portion.

Abstract: The device includes: a runner block arranged at a position close to the injection port for resin material for secondary forming; and a slide core moved relatively with the runner block. In the runner block, a guide passage is formed which is communicated with a passage formed when pipe-shaped passages of the primary moldings are butted against each other. A heating medium passage or a resin material passage formed in the slide core are moved so that either the heating medium passage or the resin material passage can be selectively communicated with the guide passage formed in the runner block.

Abstract: The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage. An insulated gate semiconductor device 100 includes a cell area through which current flows and an terminal area which surrounds the cell area. The semiconductor device 100 also has a plurality of gate trenches 21 in the cell area and a plurality of terminal trenches 62 in the terminal area The gate trenches 21 are formed in a striped shape, and the terminal trenches 62 are formed concentrically. In the semiconductor device 100, the gate trenches 21 and the terminal trenches 62 are positioned in a manner that spacings between the ends of the gate trenches 21 and the side of the terminal trench 62 are uniform. That is, the length of the gate trenches 21 is adjusted according to the curvature of the corners of terminal trench 62.

Abstract: The invention is intended to present an insulated gate type semiconductor device that can be manufactured easily and its manufacturing method while realizing both higher withstand voltage design and lower on-resistance design. The semiconductor device comprises N+ source region 31, N+ drain region 11, P? body region 41, and N? drift region 12. By excavating part of the upper side of the semiconductor device, a gate trench 21 is formed. The gate trench 21 floating region 51 is provided beneath the gate trench 21. A further trench 35 differing in depth from the gate trench 21 may be formed, a P floating region 54 being provided beneath the trench 25.

Abstract: A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during On-state thereof. The device has a reduced ON-resistance thereof.

Abstract: A drift layer is formed on a substrate. A base region is formed on the drift layer. A plurality of source regions are formed in a surficial layer of the base region. A plurality of gate electrodes face to the base region and the source region via a gate insulating film. A source electrode is brought into contact with the base region and the source region. A nitrogen cluster containing layer is embedded in the drift layer so as to extend laterally under the base region so that at least part of the drift region is left under the nitrogen cluster containing layer.

Abstract: A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.

Abstract: A hot-air supply structure (1) comprises a hot air generator (20) and a housing (15) formed in the neighborhood of a hot-air inlet (81) of a molded component M in a die (10). A nozzle (21) is formed at the forward end of the hot-air generator, and an ejection port (211b) is formed on the side wall portion of the forward end needle unit (211) of the nozzle. The housing includes a support hole (151) in the nozzle, a relief hole (152), a flow path communication passage (153) and a bypass (154). The ejection port is movable between a first position to discharge the cool or warm air into the atmosphere through the bypass from the relief hole and a second position to introduce hot air into the flow path (8) of the molded component through the inlet (81) and the passage (153).

Abstract: The change-over device changes over, to one of three passages, between the runner groove connected to the injection nozzle and the communicating groove communicated with the mold side passage. At the first position, the second passage 372 is communicated with the communicating groove and the temperature of a flow of hot air is measured by the thermocouple and the flow is discharged into the atmosphere. At the second position, the runner groove and the communicating groove are communicated with each other when the runner groove and the communicating groove are open to the second passage 371 and resin material is injected into the mold. At the third position, the material in the injection passage and the material in the runner groove are deposited to each other when the injection passage is shut off from the communicating passage and the third passage 374 is communicated with the runner groove.

Abstract: A method of manufacturing a vertical semiconductor device includes preparing a semiconductor wafer which has a heavily doped semiconductor substrate and a lightly doped semiconductor layer disposed over the semiconductor substrate, forming a semiconductor element at a surface portion of the semiconductor layer, forming a first metal layer for a first electrode of the semiconductor element over the surface portion of the semiconductor layer, grinding a back of the semiconductor substrate to thin the semiconductor substrate and roughen a back surface of the semiconductor substrate, performing a wet etching upon the back surface; and forming on the back surface a second metal layer for a second electrode of the semiconductor element.