Abstract: [Object] Provided is a method of producing a nerve fascicle including efficiently extending axons of neural cells. [Solution] Neural cells are cultivated in the presence of feeder cells including at least one type of cells selected from the group consisting of vascular component cells, perivascular cells, and oligodendrocytes.

Abstract: The present disclosure relates to a neural cell population, a neural cell-containing preparation, and a method for producing the population and preparation. More particularly, the present invention relates to a neural cell population derived from intraoral mesenchymal cells, wherein a proportion of normal diploid cells is 80% or more, a preparation containing the neural cell population, and a method for producing the population and the preparation.

Abstract: [Object] Provided is a method of producing a nerve bundle including efficiently extending axons of neural cells. [Solution] Neural cells are cultivated in the presence of feeder cells including at least one type of cells selected from vascular component cells and perivascular cells.

Abstract: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.

Abstract: The present invention provides a novel compound having antiviral activity, especially HIV replication inhibitory activity and a medicament containing the same. The compound represented by the formula: wherein A3 is CR3A, CR3AR3B, N or NR3C; R3A, R3B, R4A and R4B are each independently a hydrogen atom, halogen, cyano, substituted or unsubstituted alkyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted non-aromatic carbocyclyl; R3C is a hydrogen atom, substituted or unsubstituted alkyl, or substituted or unsubstituted non-aromatic carbocyclyl; ring T1 is substituted or unsubstituted nitrogen-containing non-aromatic heterocycle; R1 is a hydrogen atom, halogen, cyano, or substituted or unsubstituted alkyl; R2 is each independently substituted or unsubstituted alkyl or the like: n is 1 or 2; R3 is substituted or unsubstituted aromatic carbocyclyl or the like; R4 is a hydrogen atom or a carboxy protecting group.

Abstract: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.

Abstract: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.

Abstract: The present invention provides a novel compound having antiviral activity, especially HIV replication inhibitory activity and a medicament containing the same. The compound represented by the formula: wherein A3 is CR3A, CR3AR3B, N or NR3C; R3A, R3B, R4A and R4B are each independently a hydrogen atom, halogen, cyano, substituted or unsubstituted alkyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted non-aromatic carbocyclyl; R3C is a hydrogen atom, substituted or unsubstituted alkyl, or substituted or unsubstituted non-aromatic carbocyclyl; ring T1 is substituted or unsubstituted nitrogen-containing non-aromatic heterocycle; R1 is a hydrogen atom, halogen, cyano, or substituted or unsubstituted alkyl; R2 is each independently substituted or unsubstituted alkyl or the like: n is 1 or 2; R3 is substituted or unsubstituted aromatic carbocyclyl or the like; R4 is a hydrogen atom or a carboxy protecting group.

Abstract: The present invention provides a novel compound having antiviral activity, especially HIV replication inhibitory activity and a medicament containing the same. The compound represented by the formula: wherein A3 is CR3A, CR3AR3B, N or NR3C; R3A, R3B, R4A and R4B are each independently a hydrogen atom, halogen, cyano, substituted or unsubstituted alkyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted non-aromatic carbocyclyl; R3C is a hydrogen atom, substituted or unsubstituted alkyl, or substituted or unsubstituted non-aromatic carbocyclyl; ring T1 is substituted or unsubstituted nitrogen-containing non-aromatic heterocycle; R1 is a hydrogen atom, halogen, cyano, or substituted or unsubstituted alkyl; R2 is each independently substituted or unsubstituted alkyl or the like: n is 1 or 2; R3 is substituted or unsubstituted aromatic carbocyclyl or the like; R4 is a hydrogen atom or a carboxy protecting group.

Abstract: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.

Abstract: A semiconductor memory device includes a substrate, a stacked body and a columnar part. The stacked body is provided above the substrate, and the columnar part is provided inside the stacked body. The stacked body includes a first stacked body including first electrode layers stacked in a first direction, and the second stacked body including second electrode layers stacked in the first direction, and a third electrode layer between the first stacked body and the second stacked body. The columnar part includes a first columnar part inside the first stacked body, a second columnar part inside the second stacked body, and a linking portion between the first and second columnar parts. The linking portion includes a first portion having a first thickness in a second direction crossing the first direction. The first thickness is wider than a thickness in the second direction of other portion in the linking portion.

Abstract: A first tier structure is provided by forming first memory openings through a first alternating stack of first insulating layers and first spacer layers, and by forming sacrificial memory opening fill structures in the first memory openings. A second tier structure is formed over the first tier structure by forming a second alternating stack of second insulating layers and second spacer layers. Second memory openings are formed through the second tier structure in areas of the sacrificial memory opening fill structures. Distortion of the first tier structure and misalignment between the first and second memory openings is reduced or prevented by conducting thermal cycles at a lower temperature for the second tier structure than for the first tier structure.

Abstract: The present invention provides a novel compound having antiviral activity, especially HIV replication inhibitory activity and a medicament containing the same. The compound represented by the formula: wherein A3 is CR3A, CR3AR3B, N or NR3C; R3A, R3B, R4A and R4B are each independently a hydrogen atom, halogen, cyano, substituted or unsubstituted alkyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted non-aromatic carbocyclyl; R3C is a hydrogen atom, substituted or unsubstituted alkyl, or substituted or unsubstituted non-aromatic carbocyclyl; ring T1 is substituted or unsubstituted nitrogen-containing non-aromatic heterocycle; R1 is a hydrogen atom, halogen, cyano, or substituted or unsubstituted alkyl; R2 is each independently substituted or unsubstituted alkyl or the like: n is 1 or 2; R3 is substituted or unsubstituted aromatic carbocyclyl or the like; R4 is a hydrogen atom or a carboxy protecting group.

Abstract: The present invention provides a novel boron carrier compound that can be used for boron neutron capture therapy for cancer, and that can realize improvement in the efficiency of a Drug Delivery System (DDS) and an increase in the boron concentration in a tumor. The present invention provides a boron cluster-modified PEG lipid derivative represented by Formula (I): wherein, m and n are each independently an integer of 1-4, q is an integer of 1-280, and R1 and R2 are each independently a hydrocarbon group with a carbon number of 8-22, and a molecular assembly containing the same.

Abstract: The invention relates to Substituted-Quinoxaline-Type Piperidine Compounds, compositions comprising an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound and methods to treat or prevent a condition, such as pain, comprising administering to an animal in need thereof an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound.

Abstract: The invention relates to Substituted-Quinoxaline-Type Piperidine Compounds, compositions comprising an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound and methods to treat or prevent a condition, such as pain, comprising administering to an animal in need thereof an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound.

Abstract: The object of the present invention is to provide novel compounds having ACC2 inhibiting activity. In addition, the object of the present invention is to provide a pharmaceutical composition comprising the compound. A compound of formula (I?): wherein R1 is substituted or unsubstituted aryl etc., R2 is each independently hydrogen, substituted or unsubstituted alkyl etc., R3 is each independently hydrogen, substituted or unsubstituted alkyl etc., n is an integer from 0 to 3, R12 is hydrogen, substituted or unsubstituted alkyl etc., Ring A is aromatic carbocycle or aromatic heterocycle, R9 is substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl etc., m is an integer from 0 to 4, R4 and R5 is each independently hydrogen, substituted or unsubstituted alkyl etc., R6 is substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl etc., R13 is hydrogen, substituted or unsubstituted alkyl etc., X5 is bond etc.

Abstract: The present invention provides a novel boron carrier compound that can be used for boron neutron capture therapy for cancer, and that can realize improvement in the efficiency of a Drug Delivery System (DDS) and an increase in the boron concentration in a tumor. The present invention provides a boron cluster-modified PEG lipid derivative represented by Formula (I): wherein, m and n are each independently an integer of 1-4, q is an integer of 1-280, and R1 and R2 are each independently a hydrocarbon group with a carbon number of 8-22, and a molecular assembly containing the same.

Abstract: The invention relates to Substituted-Quinoxaline-Type Piperidine Compounds, compositions comprising an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound and methods to treat or prevent a condition, such as pain, comprising administering to an animal in need thereof an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound.

Abstract: A method of covalently bonding a cyclic nitroxide radical compound to a hydrophobic block of a specific hydrophylic-phobic block copolymer, and polymerized cyclic nitroxide radical compound copolymerized in this manner, as well as use of such a compound, for instance, in the medical field are provided. The compound demonstrates long term stability in vivo under reductive environment.