Patents by Inventor Akira Matsumura

Akira Matsumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240186662
    Abstract: A lead wire for a nonaqueous electrolyte battery of the present disclosure has a conductor, and an insulating film having a plurality of layers and covering at least a part of the outer peripheral surface of the conductor, wherein the insulating film has a conductor-covering layer laminated on a surface of the conductor, a first insulating layer laminated on an outermost surface of the insulating film, and a second insulating layer laminated on an inner surface of the first insulating layer; the conductor-covering layer contains an acid-modified polyolefin; and the ratio (E1/E2) of an elastic modulus E1 of the first insulating layer at any one temperature in the range of 80° C. or more and 125° C. or less to an elastic modulus E2 of the second insulating layer at the same temperature as in the first insulating layer, is 0.10 or more and 10.00 or less.
    Type: Application
    Filed: February 16, 2024
    Publication date: June 6, 2024
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yutaka MATSUMURA, Kengo GOTO, Akira TSUCHIKO
  • Publication number: 20240173904
    Abstract: The manufacturing apparatus includes a nozzle, an injection cylinder, an injection plunger, a plunger pressing member, and a movable unit for moving the plunger pressing member. The movable unit has a ball screw including a moving member and a screw shaft, and the moving member is movable to a first position, a second position, and a third position along the screw shaft. A central processing unit (CPU) of a control apparatus controls the movable unit to move the moving member to the third position in a repetition of an injection operation in which the moving member is moved between the first position and the second position.
    Type: Application
    Filed: November 27, 2023
    Publication date: May 30, 2024
    Inventors: JUNICHI MATSUMURA, KENGO NAKAJIMA, AKIRA SUZUKI, TOSHIKI KOBAYASHI, NOBUHARU HOSHI, TOSHITERU YAMASAKI
  • Patent number: 11973197
    Abstract: A lead wire for a nonaqueous electrolyte battery has a conductor, and an insulating film having a plurality of layers and covering at least a part of the outer peripheral surface of the conductor, wherein the insulating film has a conductor-covering layer laminated on a surface of the conductor, a first insulating layer laminated on an outermost surface of the insulating film, and a second insulating layer laminated on an inner surface of the first insulating layer; the conductor-covering layer contains an acid-modified polyolefin; and the ratio (E1/E2) of an elastic modulus E1 of the first insulating layer at any one temperature in the range of 80° C. or more and 125° C. or less to an elastic modulus E2 of the second insulating layer at the same temperature as in the first insulating layer, is 0.10 or more and 10.00 or less.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: April 30, 2024
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yutaka Matsumura, Kengo Goto, Akira Tsuchiko
  • Patent number: 11966657
    Abstract: An information processing apparatus includes: a receiver configured to receive an input operation of a user; and a display controller configured to display, in a display area having a first area and a second area, an image. The display controller includes: an icon controller configured to display, in the second area, first icons associated one-to-one with different layouts in splitting the first area, and a first splitter configured to split the first area into split areas based on a layout corresponding to a selected first icon to when the receiver receives an input operation for selecting any of the first icons.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: April 23, 2024
    Assignee: NTT DOCOMO, INC.
    Inventors: Kenichirou Matsumura, Kuniichiro Naruse, Keita Saito, Akira Kurosawa, Hiroki Takagaki, Kiwako Miura, Yuki Kobayashi, Takehisa Gokaichi
  • Patent number: 11927570
    Abstract: According to one embodiment, an estimation device includes a processor. The processor accepts information. The information is acquired by each of a plurality of ultrasonic sensors transmitting an ultrasonic wave in a second direction toward a weld portion and receiving a reflected wave. The ultrasonic sensors are arranged in a first direction. The second direction crosses the first direction. The processor estimates a range of the weld portion in the second direction based on an intensity distribution of the reflected wave in the second direction. The processor calculates a centroid position of an intensity distribution of the reflected wave in the first direction for each of a plurality of points in the second direction, and estimates a range of the weld portion in the first direction based on a plurality of the centroid positions.
    Type: Grant
    Filed: September 22, 2022
    Date of Patent: March 12, 2024
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masahiro Saito, Yasunori Chiba, Akira Ushijima, Toshiyuki Ono, Atsushi Matsumura
  • Publication number: 20230364303
    Abstract: [Object] Provided is a method of producing a nerve fascicle including efficiently extending axons of neural cells. [Solution] Neural cells are cultivated in the presence of feeder cells including at least one type of cells selected from the group consisting of vascular component cells, perivascular cells, and oligodendrocytes.
    Type: Application
    Filed: September 17, 2021
    Publication date: November 16, 2023
    Applicant: University of Tsukuba
    Inventors: Hiroshi ISHIKAWA, Aiki MARUSHIMA, Yuji MATSUMARU, Masao KODA, Akira MATSUMURA, Hiroki BUKAWA, Akihiro OHYAMA, Junko TOYOMURA, Miho WATANABE, Tetsuya ABE, Shohei TAKAOKA, Yosuke SHIBAO, Hideaki MATSUMURA
  • Publication number: 20220211764
    Abstract: The present disclosure relates to a neural cell population, a neural cell-containing preparation, and a method for producing the population and preparation. More particularly, the present invention relates to a neural cell population derived from intraoral mesenchymal cells, wherein a proportion of normal diploid cells is 80% or more, a preparation containing the neural cell population, and a method for producing the population and the preparation.
    Type: Application
    Filed: May 14, 2020
    Publication date: July 7, 2022
    Applicant: UNIVERSITY OF TSUKUBA
    Inventors: Aiki MARUSHIMA, Akira MATSUMURA, Hiroki BUKAWA, Masao KODA, Hiroshi ISHIKAWA, Akihiro OHYAMA, Junko TOYOMURA, Yuji MATSUMARU, Hideaki MATSUMURA, Miho WATANABE
  • Publication number: 20220106561
    Abstract: [Object] Provided is a method of producing a nerve bundle including efficiently extending axons of neural cells. [Solution] Neural cells are cultivated in the presence of feeder cells including at least one type of cells selected from vascular component cells and perivascular cells.
    Type: Application
    Filed: September 17, 2021
    Publication date: April 7, 2022
    Applicant: UNIVERSITY OF TSUKUBA
    Inventors: Aiki MARUSHIMA, Akira MATSUMURA, Hiroki BUKAWA, Yuji MATSUMARU, Masao KODA, Hiroshi ISHIKAWA, Akihiro OHYAMA, Junko TOYOMURA, Shohei TAKAOKA, Yosuke SHIBAO, Miho WATANABE, Tetsuya ABE
  • Publication number: 20210082954
    Abstract: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Inventors: Yusuke NAKANISHI, Takaya YAMANAKA, Akira MATSUMURA
  • Patent number: 10870661
    Abstract: The present invention provides a novel compound having antiviral activity, especially HIV replication inhibitory activity and a medicament containing the same. The compound represented by the formula: wherein A3 is CR3A, CR3AR3B, N or NR3C; R3A, R3B, R4A and R4B are each independently a hydrogen atom, halogen, cyano, substituted or unsubstituted alkyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted non-aromatic carbocyclyl; R3C is a hydrogen atom, substituted or unsubstituted alkyl, or substituted or unsubstituted non-aromatic carbocyclyl; ring T1 is substituted or unsubstituted nitrogen-containing non-aromatic heterocycle; R1 is a hydrogen atom, halogen, cyano, or substituted or unsubstituted alkyl; R2 is each independently substituted or unsubstituted alkyl or the like: n is 1 or 2; R3 is substituted or unsubstituted aromatic carbocyclyl or the like; R4 is a hydrogen atom or a carboxy protecting group.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: December 22, 2020
    Assignee: Shionogi & Co., Ltd.
    Inventors: Yoshinori Tamura, Shuichi Sugiyama, Akira Matsumura, Toshiyuki Akiyama, Yutaka Tomida
  • Publication number: 20200212066
    Abstract: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.
    Type: Application
    Filed: March 9, 2020
    Publication date: July 2, 2020
    Inventors: Yusuke NAKANISHI, Takaya YAMANAKA, Akira MATSUMURA
  • Patent number: 10600803
    Abstract: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: March 24, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yusuke Nakanishi, Takaya Yamanaka, Akira Matsumura
  • Publication number: 20200055873
    Abstract: The present invention provides a novel compound having antiviral activity, especially HIV replication inhibitory activity and a medicament containing the same. The compound represented by the formula: wherein A3 is CR3A, CR3AR3B, N or NR3C; R3A, R3B, R4A and R4B are each independently a hydrogen atom, halogen, cyano, substituted or unsubstituted alkyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted non-aromatic carbocyclyl; R3C is a hydrogen atom, substituted or unsubstituted alkyl, or substituted or unsubstituted non-aromatic carbocyclyl; ring T1 is substituted or unsubstituted nitrogen-containing non-aromatic heterocycle; R1 is a hydrogen atom, halogen, cyano, or substituted or unsubstituted alkyl; R2 is each independently substituted or unsubstituted alkyl or the like: n is 1 or 2; R3 is substituted or unsubstituted aromatic carbocyclyl or the like; R4 is a hydrogen atom or a carboxy protecting group.
    Type: Application
    Filed: October 28, 2019
    Publication date: February 20, 2020
    Applicant: Shionogi & Co., Ltd.
    Inventors: Yoshinori Tamura, Shuichi Sugiyama, Akira Matsumura, Toshiyuki Akiyama, Yutaka Tomida
  • Patent number: 10494380
    Abstract: The present invention provides a novel compound having antiviral activity, especially HIV replication inhibitory activity and a medicament containing the same. The compound represented by the formula: wherein A3 is CR3A, CR3AR3B, N or NR3C; R3A, R3B, R4A and R4B are each independently a hydrogen atom, halogen, cyano, substituted or unsubstituted alkyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted non-aromatic carbocyclyl; R3C is a hydrogen atom, substituted or unsubstituted alkyl, or substituted or unsubstituted non-aromatic carbocyclyl; ring T1 is substituted or unsubstituted nitrogen-containing non-aromatic heterocycle; R1 is a hydrogen atom, halogen, cyano, or substituted or unsubstituted alkyl; R2 is each independently substituted or unsubstituted alkyl or the like: n is 1 or 2; R3 is substituted or unsubstituted aromatic carbocyclyl or the like; R4 is a hydrogen atom or a carboxy protecting group.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: December 3, 2019
    Assignee: Shionogi & Co., Ltd.
    Inventors: Yoshinori Tamura, Shuichi Sugiyama, Akira Matsumura, Toshiyuki Akiyama, Yutaka Tomida
  • Publication number: 20190198523
    Abstract: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.
    Type: Application
    Filed: September 3, 2018
    Publication date: June 27, 2019
    Inventors: Yusuke NAKANISHI, Takaya YAMANAKA, Akira MATSUMURA
  • Publication number: 20190123055
    Abstract: A semiconductor memory device includes a substrate, a stacked body and a columnar part. The stacked body is provided above the substrate, and the columnar part is provided inside the stacked body. The stacked body includes a first stacked body including first electrode layers stacked in a first direction, and the second stacked body including second electrode layers stacked in the first direction, and a third electrode layer between the first stacked body and the second stacked body. The columnar part includes a first columnar part inside the first stacked body, a second columnar part inside the second stacked body, and a linking portion between the first and second columnar parts. The linking portion includes a first portion having a first thickness in a second direction crossing the first direction. The first thickness is wider than a thickness in the second direction of other portion in the linking portion.
    Type: Application
    Filed: September 14, 2018
    Publication date: April 25, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventor: Akira Matsumura
  • Patent number: 10224240
    Abstract: A first tier structure is provided by forming first memory openings through a first alternating stack of first insulating layers and first spacer layers, and by forming sacrificial memory opening fill structures in the first memory openings. A second tier structure is formed over the first tier structure by forming a second alternating stack of second insulating layers and second spacer layers. Second memory openings are formed through the second tier structure in areas of the sacrificial memory opening fill structures. Distortion of the first tier structure and misalignment between the first and second memory openings is reduced or prevented by conducting thermal cycles at a lower temperature for the second tier structure than for the first tier structure.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: March 5, 2019
    Assignees: SANDISK TECHNOLOGIES LLC, TOSHIBA MEMORY CORPORATION
    Inventors: Kota Funayama, Masayuki Fukai, Takaya Yamanaka, Masaki Tsuji, Akira Matsumura
  • Publication number: 20180162876
    Abstract: The present invention provides a novel compound having antiviral activity, especially HIV replication inhibitory activity and a medicament containing the same. The compound represented by the formula: wherein A3 is CR3A, CR3AR3B, N or NR3C; R3A, R3B, R4A and R4B are each independently a hydrogen atom, halogen, cyano, substituted or unsubstituted alkyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted non-aromatic carbocyclyl; R3C is a hydrogen atom, substituted or unsubstituted alkyl, or substituted or unsubstituted non-aromatic carbocyclyl; ring T1 is substituted or unsubstituted nitrogen-containing non-aromatic heterocycle; R1 is a hydrogen atom, halogen, cyano, or substituted or unsubstituted alkyl; R2 is each independently substituted or unsubstituted alkyl or the like: n is 1 or 2; R3 is substituted or unsubstituted aromatic carbocyclyl or the like; R4 is a hydrogen atom or a carboxy protecting group.
    Type: Application
    Filed: May 27, 2016
    Publication date: June 14, 2018
    Applicant: Shionogi & Co., Ltd.
    Inventors: Yoshinori TAMURA, Takashi KAWASUJI, Shuichi SUGIYAMA, Akira MATSUMURA, Toshiyuki AKIYAMA, Yutaka TOMIDA
  • Patent number: 9468688
    Abstract: The present invention provides a novel boron carrier compound that can be used for boron neutron capture therapy for cancer, and that can realize improvement in the efficiency of a Drug Delivery System (DDS) and an increase in the boron concentration in a tumor. The present invention provides a boron cluster-modified PEG lipid derivative represented by Formula (I): wherein, m and n are each independently an integer of 1-4, q is an integer of 1-280, and R1 and R2 are each independently a hydrocarbon group with a carbon number of 8-22, and a molecular assembly containing the same.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: October 18, 2016
    Assignee: UNIVERSITY OF TSUKUBA
    Inventors: Akira Matsumura, Kei Nakai, Makoto Shirakawa
  • Publication number: 20160159785
    Abstract: The invention relates to Substituted-Quinoxaline-Type Piperidine Compounds, compositions comprising an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound and methods to treat or prevent a condition, such as pain, comprising administering to an animal in need thereof an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound.
    Type: Application
    Filed: February 11, 2016
    Publication date: June 9, 2016
    Inventors: Kouki FUCHINO, R. Richard Goehring, Akira Matsumura, Bin Shao, Yoshiyuki Taoda, Naoki Tsuno, John William Frank Whitehead, Jiangchao Yao