Abstract: A method of covalently bonding a cyclic nitroxide radical compound to a hydrophobic block of a specific hydrophylic-phobic block copolymer, and polymerized cyclic nitroxide radical compound copolymerized in this manner, as well as use of such a compound, for instance, in the medical field are provided. The compound demonstrates long term stability in vivo under reductive environment.

Abstract: The invention relates to azetidinyl, pyrrolidinyl, piperidinyl, and hexahydroazepinyl compounds of Formula (I): and pharmaceutically acceptable salts, prodrugs, or solvates thereof, wherein R1-R3, Z, p and q are defined as set forth in the specification. The invention is also directed to the use compounds of Formula (I) to treat, prevent or ameliorate a disorder responsive to the blockade of calcium channels, and particularly N-type calcium channels. Compounds of the present invention are especially useful for treating pain.

Abstract: The invention relates to acrylamide compounds of Formula I mentioned below. The invention is also directed to the use compounds of Formula I to treat or prevent a disorder responsive to the blockade of calcium channels, and particularly N-type calcium channels. Compounds of the present invention are especially useful for treating pain.

Abstract: To provide a semiconductor device having a structure free from variations in resistance even when a stress is applied thereto; and a manufacturing method of the device. The semiconductor device has a metal resistor layer in a region between a passivation film and an uppermost level aluminum interconnect. This makes it possible to realize a high-precision resistor having few variations in resistance due to a mold stress that occurs in a packaging step or thereafter and therefore, makes it possible to form a high-precision analog circuit.

Abstract: The invention relates to acrylamide compounds of Formula I mentioned below. The invention is also directed to the use compounds of Formula I to treat or prevent a disorder responsive to the blockade of calcium channels, and particularly N-type calcium channels. Compounds of the present invention are especially useful for treating pain.

Abstract: The invention relates to amide compounds of Formula I: (I) and pharmaceutically acceptable salts, prodrugs and solvates thereof, wherein: Y is CO or SOm; Z is each optionally substituted lower alkyl, lower alkenyl, cycloalkyl, aryl, heterocyclyl, etc.; R1 and R2 are each independently hydrogen, halogen, cyano, optionally substituted lower alky, optionally substituted cycloalkyl, optionally substituted aryl or optionally substituted heterocyclyl etc. R3 and R4 are hydrogen, each optionally substituted lower alkyl, cycloalkyl, aryl or heterocyclyl etc.; X is ?O, optionally substituted lower alkyl, halogen, cyano, nitro etc., n is 0-5, m is 1 or 2 and p is 0-2. The invention is also directed to the use compounds of Formula I to treat, prevent or ameliorate a disorder responsive to the blockade of calcium channels, and particularly N-type calcium channels. Compounds of the present invention are especially useful for treating pain.

Abstract: To provide a semiconductor device having a structure free from variations in resistance even when a stress is applied thereto; and a manufacturing method of the device. The semiconductor device has a metal resistor layer in a region between a passivation film and an uppermost level aluminum interconnect. This makes it possible to realize a high-precision resistor having few variations in resistance due to a mold stress that occurs in a packaging step or thereafter and therefore, makes it possible to form a high-precision analog circuit.

Abstract: It was found out that the nitrogen-containing heterocyclic derivative represented by the formula (I) specifically binds to a receptor of NR1/NR2B, and is used as a NR2B receptor antagonist. A compound represented by: wherein Z is N or CR1, A1 is a nitrogen-containing aromatic monocyclic group which is optionally substituted, a nitrogen-containing aromatic fused cyclic group which is optionally substituted etc., A2 is an aromatic hydrocarbon cyclic group or an aromatic heterocyclic group, each optionally having a substituent, R1, R2, Ra, Rb, Rc and Rd are each independently hydrogen, hydroxy, etc., w is 2 or 3, t is 1 or 2, X is —(CR3R4)m-, —CO(CR3R4)n-, —CONR5(CR3R4)n- etc., m is an integer of 1 to 4, n is an integer of 0 to 4, R3 and R4 are each independently hydrogen, halogen, hydroxy etc., and R5 is hydrogen or lower alkyl, or a pharmaceutically acceptable salt, or a solvate thereof.

Abstract: A method of covalently bonding a cyclic nitroxide radical compound to a hydrophobic block of a specific hydrophylic-phobic block copolymer, and polymerized cyclic nitroxide radical compound copolymerized in this manner, as well as use of such a compound, for instance, in the medical field are provided. The compound demonstrates long term stability in vivo under reductive environment.

Abstract: It was found out that the nitrogen-containing heterocyclic derivative represented by the formula (I) specifically binds to a receptor of NR1/NR2B, and is used as a NR2B receptor antagonist. A compound represented by: wherein Z is N or CR1, A1 is a nitrogen-containing aromatic monocyclic group which is optionally substituted, a nitrogen-containing aromatic fused cyclic group which is optionally substituted etc., A2 is an aromatic hydrocarbon cyclic group or an aromatic heterocyclic group, each optionally having a substituent, R1, R2, Ra, Rb, Rc and Rd are each independently hydrogen, hydroxy, etc., w is 2 or 3, t is 1 or 2, X is —(CR3R4)m-, —CO(CR3R4)n-, —CONR5(CR3R4)n- etc., m is an integer of 1 to 4, n is an integer of 0 to 4, R3 and R4 are each independently hydrogen, halogen, hydroxy etc., and R5 is hydrogen or lower alkyl, or a pharmaceutically acceptable salt, or a solvate thereof.

Abstract: The invention relates to Substituted-Quinoxaline-Type Piperidine Compounds, compositions comprising an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound and methods to treat or prevent a condition, such as pain, comprising administering to an animal in need thereof an effective amount of a Substituted-Quinoxaline-Type Piperidine Compound.

Abstract: The invention relates to azetidinyl, pyrrolidinyl, piperidinyl, and hexahydroazepinyl compounds of Formula (I): and pharmaceutically acceptable salts, prodrugs, or solvates thereof, wherein R1-R3, Z, p and q are defined as set forth in the specification. The invention is also directed to the use compounds of Formula (I) to treat, prevent or ameliorate a disorder responsive to the blockade of calcium channels, and particularly N-type calcium channels. Compounds of the present invention are especially useful for treating pain.

Abstract: The invention relates to oxime compounds of Formula (I) and pharmaceutically acceptable salts, prodrugs, or solvates thereof, wherein X is hydrogen, optionally substituted aryl, optionally substituted heteroaryl or the like; Y is CO, SO2, CR3R4 or the like; Z is optionally substituted lower alkyl, optionally substituted aryl or the like; W is optionally substituted lower alkylene or optionally substituted lower alkenylene, R3 and R4 are each independently hydrogen, lower alkyl or the like; p is 0, 1, or 2 and q is 0, 1 or 2. The invention is also directed to the use compounds of Formula I to treat, prevent or ameliorate a disorder responsive to the blockade of calcium channels, and particularly N-type calcium channels. Compounds of the present invention are especially useful for treating pain.

Abstract: It was found out that the nitrogen-containing heterocyclic derivative represented by the formula (I) specifically binds to a receptor of NR1/NR2B, and is used as a NR2B receptor antagonist. A compound represented by: wherein Z is N or CR1, A1 is a nitrogen-containing aromatic monocyclic group which is optionally substituted, a nitrogen-containing aromatic fused cyclic group which is optionally substituted etc., A2 is an aromatic hydrocarbon cyclic group or an aromatic heterocyclic group, each optionally having a substituent, R1, R2, Ra, Rb, Rc and Rd are each independently hydrogen, hydroxy, etc., w is 2 or 3, t is 1 or 2, X is —(CR3R4)m-, —CO(CR3R4)n-, —CONR5(CR3R4)n- etc., m is an integer of 1 to 4, n is an integer of 0 to 4, R3 and R4 are each independently hydrogen, halogen, hydroxy etc., and R5 is hydrogen or lower alkyl, or a pharmaceutically acceptable salt, or a solvate thereof.

Abstract: In a defect detection apparatus, data of an inspection image and that of a reference image are inputted from an image pickup part (3) to an operation part (50), and a differential image is thereby generated in a differential image generation part (52) and an image representing a defect inclusion area which includes a defect in an area image generation part (51) as an image which has less information on a false defect and shape of a defect than information on those in the differential image. A first evaluation part (53) performs a provisional evaluation on whether a defect candidate in an area of the differential image which corresponds to the defect inclusion area is true or false.

Abstract: When an opening diameter of a top end of a substantially column-shaped contact hole is S1, an opening diameter of a top end of a substantially column-shaped contact hole is T1, and a thickness of a silicon insulating layer is h, then contact holes are formed so as to satisfy the following conditional expression 1. T1/h<tan &thgr;1<S1/h (expression 1). With this formation method, a manufacturing method of a semiconductor device can be provided which does not need covering processing using a photolithography technique when impurity regions of different conductivity types are formed using contact holes.

Abstract: A reliable electrode structure capable of ensuring a sufficient width for a second conductive layer is provided. The electrode structure comprises a first conductive layer having first side walls and containing at least either polycrystalline silicon or amorphous silicon, a second conductive layer, formed on the first conductive layer, having second side walls and containing a metal and silicon, and side wall oxide films formed to be in contact with the first side walls and the second side walls. The first conductive layer and the second conductive layer contain nitrogen in the vicinity of the first and second side walls. The nitrogen concentration in the second side walls is larger than the nitrogen concentration in the first side walls.

Abstract: A silicon nitride film, having a greater selective ratio with respect to an interlayer insulating film than a resist film under a prescribed etching condition and harder to polish upon chemical mechanical polishing than the interlayer insulating film, is formed on the interlayer insulating film. This silicon nitride film is used as a hard mask to prevent reduction in height of the interlayer insulating film during chemical mechanical polishing for forming a capacitor lower electrode. The silicon nitride film is also used as an etching mask during etching for forming a hole.

Abstract: Each of contact plugs has an area of an upper surface larger than that of a lower surface. With this, better connections between contact plugs and plugs connected to upper surfaces of contact plugs are achieved. Therefore, a semiconductor device which can enhance a characteristic and a manufacturing method thereof are obtained.

Abstract: The solid electrolyte, wherein the solid electrolyte is formed by making a thin film containing at least one of a polysilane which is soluble in organic solvent and a silicone compound, to contain a metal salt compound such as LiBF4, wherein the silicone compound is represented by the following general formula (1) 1