Abstract: The present disclosure describes a method for forming a hard mask on a transistor's gate structure that minimizes gate spacer loss and gate height loss during the formation of self-aligned contact openings. The method includes forming spacers on sidewalls of spaced apart gate structures and disposing a dielectric layer between the gate structures. The method also includes etching top surfaces of the gate structures and top surfaces of the spacers with respect to a top surface of the dielectric layer. Additionally, the method includes depositing a hard mask layer having a metal containing dielectric layer over the etched top surfaces of the gate structures and the spacers and etching the dielectric layer with an etching chemistry to form contact openings between the spacers, where the hard mask layer has a lower etch rate than the spacers when exposed to the etching chemistry.

Abstract: A method for forming a semiconductor structure includes forming a gate structure on a substrate; depositing a first dielectric layer over the gate structure; depositing a second dielectric layer over the first dielectric layer and having a different density than the first dielectric layer; performing a first etching process on the first and second dielectric layers to form a trench; performing a second etching process on the first and second dielectric layers to modify the trench; filling a conductive material in the modified trench.

Abstract: A semiconductor device that includes a semiconductor substrate, a dielectric layer over the semiconductor substrate, a conductive feature over the semiconductor substrate and buried in the dielectric layer, and a metal plug over the conductive feature and buried in the dielectric layer, where the dielectric layer has a hydrophobic sidewall facing the metal plug.

Abstract: A semiconductor device that includes a semiconductor substrate, a dielectric layer over the semiconductor substrate, a conductive feature over the semiconductor substrate and buried in the dielectric layer, and a metal plug over the conductive feature and buried in the dielectric layer, where the dielectric layer has a hydrophobic sidewall facing the metal plug.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate having an active region and an isolation region. The semiconductor structure includes gate stacks on the substrate that extend over the active region and the isolation region. The semiconductor structure includes a gate spacer on sidewalls of the gate stacks. The semiconductor structure includes an interlevel dielectric (ILD) layer over the substrate and implanted with one or more dopants, the ILD layer having a top implanted portion over a bottom nonimplanted portion. The top implanted portion seals an air gap between a sidewall of the ILD layer and the gate spacer.

Abstract: A semiconductor device includes a substrate, a semiconductor fin protruding from the substrate, an isolation layer disposed above the substrate, a dielectric fin with a bottom portion embedded in the isolation layer, and a gate structure over top and sidewall surfaces of the semiconductor fin and the dielectric fin. The semiconductor fin has a first sidewall and a second sidewall facing away from the first sidewall. The isolation layer includes a first portion disposed on the first sidewall of the semiconductor fin and a second portion disposed on the second sidewall of the semiconductor fin. A top portion of the dielectric fin includes an air pocket with a top opening sealed by the gate structure.

Abstract: A method of forming a semiconductor device comprises forming a fin structure; forming a source/drain structure in the fin structure; and forming a gate electrode over the fin structure. The source/drain structure includes Si1?x?yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, 0.01?x?0.1, and 0.01?y?0.

Abstract: The present disclosure provides a method of fabricating a semiconductor structure in accordance with some embodiments. The method includes receiving a substrate having an active region and an isolation region; forming gate stacks on the substrate that extends from the active region to the isolation region; forming an inner gate spacer and an outer gate spacer on sidewalls of the gate stacks; forming an interlevel dielectric (ILD) layer on the substrate; forming a mask layer over the substrate that exposes a portion of the ILD layer and a portion of the outer gate spacer; selectively etching the exposed portion of the outer gate spacer, resulting in an air gap between the inner gate spacer and the ILD layer; and performing an ion implantation process on the exposed portion of the ILD layer to seal the air gap.

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor fin protruding from the semiconductor substrate, and an isolation layer disposed above the semiconductor substrate. The isolation layer includes a first portion disposed on a first sidewall of the semiconductor fin and a second portion disposed on a second sidewall of the semiconductor fin. Top surfaces of the first and second portions of the isolation layer are leveled. The first portion of the isolation layer includes an air pocket. The semiconductor device also includes a dielectric fin with a bottom portion embedded in the second portion of the isolation layer.

Abstract: The present disclosure provides a method of fabricating a semiconductor structure in accordance with some embodiments. The method includes receiving a substrate having an active region and an isolation region; forming gate stacks on the substrate that extends from the active region to the isolation region; forming an inner gate spacer and an outer gate spacer on sidewalls of the gate stacks; forming an interlevel dielectric (ILD) layer on the substrate; forming a mask layer over the substrate that exposes a portion of the ILD layer and a portion of the outer gate spacer; selectively etching the exposed portion of the outer gate spacer, resulting in an air gap between the inner gate spacer and the ILD layer; and performing an ion implantation process on the exposed portion of the ILD layer to seal the air gap.

Abstract: A method for forming a semiconductor structure includes forming a gate structure on a substrate; depositing a first dielectric layer over the gate structure; depositing a second dielectric layer over the first dielectric layer and having a different density than the first dielectric layer; performing a first etching process on the first and second dielectric layers to form a trench; performing a second etching process on the first and second dielectric layers to modify the trench; filling a conductive material in the modified trench.

Abstract: The present disclosure provides a method of fabricating a semiconductor structure in accordance with some embodiments. The method includes receiving a substrate having an active region and an isolation region; forming gate stacks on the substrate and extending from the active region to the isolation region; forming an inner gate spacer and an outer gate spacer on sidewalls of the gate stacks; forming an interlevel dielectric (ILD) layer on the substrate; removing the outer gate spacer in the isolation region, resulting in an air gap between the inner gate spacer and the ILD layer; and performing an ion implantation process to the ILD layer, thereby expanding the ILD layer to cap the air gap.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate structure, an etch stop layer, a dielectric structure, and a conductive material. The gate structure is on the semiconductor substrate. The etch stop layer is over the gate structure. The dielectric structure is over the etch stop layer, in which the dielectric structure has a ratio of silicon to nitrogen varying from a middle layer of the dielectric structure to a bottom layer of the dielectric structure. The conductive material extends through the dielectric structure.

Abstract: A method of forming a semiconductor device including a fin field effect transistor (FinFET), the method includes forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of the opening and on at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, forming a dielectric layer in the opening. After the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening. The FinFET is an n-type FET, and the source/drain structure includes an epitaxial layer made of Si1-y-a-bGeaSnbM2y, wherein 0<a, 0<b, 0.01?(a+b)?0.1, 0.01?y?0.1, and M2 is P or As.

Abstract: The present disclosure describes an inner spacer structure for a semiconductor device and a method for forming the same. The method for forming the inner spacer structure in the semiconductor device can include forming a vertical structure over a substrate, forming a gate structure over a portion of the vertical structure, exposing sidewalls of the portion of the vertical structure, forming multiple spacers over the sidewalls of the portion of the vertical structure, and forming a void in each of the multiple spacers.

Abstract: A method of forming a semiconductor device comprises forming a fin structure; forming a source/drain structure in the fin structure; and forming a gate electrode over the fin structure. The source/drain structure includes Si?x?yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, 0.01?x?0.1, and 0.01?y?0.

Abstract: The present disclosure describes an inner spacer structure for a semiconductor device and a method for forming the same. The method for forming the inner spacer structure in the semiconductor device can include forming a vertical structure over a substrate, forming a gate structure over a portion of the vertical structure, exposing sidewalls of the portion of the vertical structure, forming multiple spacers over the sidewalls of the portion of the vertical structure, and forming a void in each of the multiple spacers.

Abstract: A method of forming a semiconductor device including a fin field effect transistor (FinFET) includes forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of the opening and on at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, forming a dielectric layer in the opening. After the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening. The FinFET is an n-type FET, and the source/drain structure includes an epitaxial layer including Si1?x?yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, and 0.01?x?0.1, and 0.01?y?0.1.

Abstract: The present disclosure describes a method for forming a hard mask on a transistor's gate structure that minimizes gate spacer loss and gate height loss during the formation of self-aligned contact openings. The method includes forming spacers on sidewalls of spaced apart gate structures and disposing a dielectric layer between the gate structures. The method also includes etching top surfaces of the gate structures and top surfaces of the spacers with respect to a top surface of the dielectric layer. Additionally, the method includes depositing a hard mask layer having a metal containing dielectric layer over the etched top surfaces of the gate structures and the spacers and etching the dielectric layer with an etching chemistry to form contact openings between the spacers, where the hard mask layer has a lower etch rate than the spacers when exposed to the etching chemistry.

Abstract: The present disclosure describes a method for forming a hard mask on a transistor's gate structure that minimizes gate spacer loss and gate height loss during the formation of self-aligned contact openings. The method includes forming spacers on sidewalls of spaced apart gate structures and disposing a dielectric layer between the gate structures. The method also includes etching top surfaces of the gate structures and top surfaces of the spacers with respect to a top surface of the dielectric layer. Additionally, the method includes depositing a hard mask layer having a metal containing dielectric layer over the etched top surfaces of the gate structures and the spacers and etching the dielectric layer with an etching chemistry to form contact openings between the spacers, where the hard mask layer has a lower etch rate than the spacers when exposed to the etching chemistry.