Abstract: A semiconductor device includes a voltage generating circuit, a first switch, and a charging circuit. The voltage generating circuit generates a voltage for output and has a function to adjust a magnitude of the voltage to be generated. A first switch has a first conduction terminal and a second conduction terminal that are brought into conduction with each other in an ON state, and the first conduction terminal is connected to an output node of the voltage generating circuit via a first line. The charging circuit charges a second line connected to the second conduction terminal of the first switch.

Abstract: A semiconductor device which makes it possible to reduce a wasteful standby time at power-on is provided. In this semiconductor device, a reset of an internal circuit is canceled as described below. When a data signal stored in a storage section is at “0,” the reset is canceled by bringing an internal reset signal to the “H” level when a relatively short time has passed after the rising edge of a power on reset signal. When the data signal is at “1,” the reset is canceled by bringing the internal reset signal to the “H” level when a relatively long time has passed after the rising edge of the power on reset signal. Therefore, a wasteful standby time at power-on can be reduced by writing the data signal logically equivalent to the rise time of supply voltage to the storage section.

Abstract: A semiconductor device includes a voltage generating circuit, a first switch, and a charging circuit. The voltage generating circuit generates a voltage for output and has a function to adjust a magnitude of the voltage to be generated. A first switch has a first conduction terminal and a second conduction terminal that are brought into conduction with each other in an ON state, and the first conduction terminal is connected to an output node of the voltage generating circuit via a first line. The charging circuit charges a second line connected to the second conduction terminal of the first switch.

Abstract: A step down unit steps down an external power supply voltage Vcc. A bias current control circuit controls the magnitude of bias current flowing through an auxiliary path connecting an output node and the ground. A system controller increases the magnitude of the bias current, prior to a change of the operation state of a load circuit by which a relatively large change occurs to the amount of current consumed by the load circuit including a central processing unit.

Abstract: A bus control circuit includes cycle registers provided with areas for holding signal levels of system-to-external bus control signals such that each of the cycle registers is provided for a corresponding cycle. A default register, additionally included in the bus control circuit, holds signal levels of the system-to-external bus control signals in a normal state. The signal levels of the system-to-external bus control signals held in the corresponding areas in the cycle registers are output cycle by cycle. When the normal state takes over, the signal levels held in the corresponding areas in the default register are output.

Abstract: A semiconductor device includes a plurality of internal row pads and external row pads, consisting of a pad and a pad-control portion that controls an input signal from and an output signal to the pad. The pad and the pad-control portion of the internal row pad are disposed in relationship of reversed arrangement with the pad and the pad-control portion of the external row pad. A plurality of the internal row pads in which the pad and the pad-control portion are disposed in the bonding direction and a plurality of the external row pads in which the pad and the pad-control portion are disposed in the bonding direction are each alternately disposed adjacent perpendicularly to the bonding direction.

Abstract: A semiconductor device includes a plurality of internal row pads and external row pads, consisting of a pad and a pad-control portion that controls an input signal from and an output signal to the pad. The pad and the pad-control portion of the internal row pad are disposed in relationship of reversed arrangement with the pad and the pad-control portion of the external row pad. A plurality of the internal row pads in which the pad and the pad-control portion are disposed in the bonding direction and a plurality of the external row pads in which the pad and the pad-control portion are disposed in the bonding direction are each alternately disposed adjacent perpendicularly to the bonding direction.