Abstract: There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.

Abstract: A semiconductor memory device includes a plurality of cell blocks each having a plurality of memory cells, a plurality of bit lines for reading data from the individual memory cells, and a precharge circuit for precharging one bit line selected from among the plurality of bit lines in response to a precharge signal. It is determined whether charge in the precharged bit line is to be discharged based on a data content of a memory cell in the cell block selected by a row decoder connected to the bit line. The data content of the selected memory cell in the selected cell block is read out by a potential of the bit line. The memory device further includes at least one gate switching element connected in series to the memory cells of each of the cell blocks. The gate switching element, together with the memory cells of each cell block, forms a series circuit which has one end connected to an associated one of the bit lines and a second end connected to a low-voltage power supply.

Abstract: A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatus, a thermal processing apparatus, and a preliminary chamber) for fabrication of semiconductor devices. At least one of these vacuum apparatuses is a laser.

Abstract: Method of fabricating a thin-film transistor. This transistor has a semiconductor such as a silicon semiconductor. This semiconductor is irradiated with pulsed laser light having a pulse width which is set greater than 1 .mu.s to maintain molten state of the silicon surface for a long time. As a result, a silicon film having high crystallinity can be obtained. This scheme can be used for crystallization of an amorphous silicon film and for activation effected after implantation of impurity ions.

Abstract: A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.

Abstract: An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.

Abstract: A preheating process for steel-making materials, in which the steel-making materials are preheated in a preheating furnace and transferred to a bucket in a clean state for charging them into the steel-making furnace by scattering any dust sticking to the materials by dumping them into the bucket and collecting the scattered dust.