Abstract: According to an embodiment, a battery includes an exterior container, a lid member, a plurality of electrode groups, a first lead, a second lead, and an electrode terminal. The lid member closes an opening of an inner cavity of the exterior container, and the plurality of electrode groups are stored in the inner cavity. A first current collecting tab protruding toward the lid member in a first electrode is joined with the first lead, and a second current collecting tab protruding toward the lid member in the second electrode different from the first electrode is joined with the second lead separate from the first lead. The first and second leads are together connected to the electrode terminal exposed on an outer surface of the lid member.

Abstract: A detection device (20) according to the present disclosure includes an acquisition unit (11) that acquires point cloud data indicating a distance to an object and luminance information obtained from reflected light of a beam emitted when the point cloud data is measured, an edge detection unit (12) that performs edge detection based on the luminance information, a classification unit (21) that classifies, based on distribution of points contained in a crack candidate being a set of points detected as an edge, a plurality of the crack candidates into one of groups, and a label assignment unit (23) that accepts input of a label regarding the group from a user having visually recognized a shape of the crack candidate belonging to the group.

Abstract: A robot system includes: a robot control unit that controls an operation of a robot, using a control parameter for the robot; a safety monitoring unit that monitors the operation of the robot, using a safety monitoring parameter for the robot; a control parameter setting unit that sets the control parameter to the robot control unit; and a safety monitoring parameter setting unit that acquires the control parameter set to the robot control unit, from the robot control unit, and sets at least one of a plurality of parameters included in the acquired control parameter, as the safety monitoring parameter to the safety monitoring unit.

Abstract: Provided is an easy engine starting system including: an engine; a centrifugal clutch configured to transmit a driving force of the engine to a driven device; and a control device configured to adjust output of the engine. When the engine is to be started, the engine is accelerated at start engine output which enables the engine to reach a rotation speed higher than a clutch-in rotation speed. The control device has suppression control of suppressing, at the start engine output, the rotation speed to a rotation speed equal to or lower than the clutch-in rotation speed.

Abstract: Wells formed in a semiconductor device can be discharged faster in a transition from a stand-by state to an active state. The semiconductor device includes an n-type well applied, in an active state, with a power supply voltage and, in a stand-by state, with a voltage higher than the power supply voltage, a p-type well applied, in the active state, with a ground voltage and, in the stand-by state, with a voltage lower than the ground voltage, and a path which, in a transition from the stand-by state to the active state, electrically couples the n-type well and the p-type well.

Abstract: A microcomputer performs a power supply operation to a wireless communication module at a first time interval set based on a power generation amount at a lowest day power generation amount of a temperature differential power generation module. In addition, the microcomputer performs the power supply operation to a sensor at a second time interval set based on the power generation amount at the lowest day power generation amount of the temperature differential power generation module.

Abstract: An electronic system device comprises a power generation device generating a power supply voltage, a substrate bias generation circuit connected to the power generation device, a memory circuit, a monitor circuit, and a capacitor connected to the substrate bias generation circuit via a switch. The substrate bias generation circuit generates a substrate bias voltage from the power supply voltage and supplies charges based on the substrate bias voltage to the capacitor while the switch is ON-state. While the switch is OFF-state, the capacitor stores the accumulated charges based on the substrate bias voltage. While the switch is ON-state, the substrate bias generation circuit adds based on the substrate bias voltage to charge that was held, and states the back bias voltage. The substrate bias generation circuit supplies the back bias voltage to memory circuit.

Abstract: An etching method of a substrate includes (a) providing a substrate on a substrate support inside a chamber, the substrate including a first region having a multilayer film in which a silicon oxide film and a silicon nitride film are alternately stacked and a second region having a monolayer silicon oxide film; and (b) etching the substrate with plasma generated from a first processing gas that includes a hydrofluorocarbon gas, wherein the hydrofluorocarbon gas includes a first hydrofluorocarbon gas represented by CxHyFz (x represents an integer of 2 or more, and y and z represent an integer of 1 or more) and having an unsaturated bond.

Abstract: A microcomputer performs a power supply operation to a wireless communication module at a first time interval set based on a power generation amount at a lowest day power generation amount of a temperature differential power generation module. In addition, the microcomputer performs the power supply operation to a sensor at a second time interval set based on the power generation amount at the lowest day power generation amount of the temperature differential power generation module.

Abstract: An insulation detector for highly accurately detecting or measuring, with a simple configuration, insulation resistance of a load or an apparatus to a ground or a housing and connected to an electric apparatus including one or both of an intra-apparatus capacitor and a battery, the insulation detector including an intra-insulation detector capacitor, a voltage detecting unit that detects a voltage of the intra-insulation detector capacitor, and a current-path forming switch for connecting the ground or the housing, the intra-apparatus capacitor, and the intra-insulation detector capacitor in series and forming a current path including insulation resistance of the electric apparatus. The insulation detector measures the insulation resistance by measuring a time constant of a change in the voltage of the intra-insulation detector capacitor.

Abstract: An electronic system device comprises a power generation device generating a power supply voltage, a substrate bias generation circuit connected to the power generation device, a memory circuit, a monitor circuit, and a capacitor connected to the substrate bias generation circuit via a switch. The substrate bias generation circuit generates a substrate bias voltage from the power supply voltage and supplies charges based on the substrate bias voltage to the capacitor while the switch is ON-state. While the switch is OFF-state, the capacitor stores the accumulated charges based on the substrate bias voltage. While the switch is ON-state, the substrate bias generation circuit adds based on the substrate bias voltage to charge that was held, and states the back bias voltage. The substrate bias generation circuit supplies the back bias voltage to memory circuit.

Abstract: Wells formed in a semiconductor device can be discharged faster in a transition from a stand-by state to an active state. The semiconductor device includes an n-type well applied, in an active state, with a power supply voltage and, in a stand-by state, with a voltage higher than the power supply voltage, a p-type well applied, in the active state, with a ground voltage and, in the stand-by state, with a voltage lower than the ground voltage, and a path which, in a transition from the stand-by state to the active state, electrically couples the n-type well and the p-type well.

Abstract: Wells formed in a semiconductor device can be discharged faster in a transition from a stand-by state to an active state. The semiconductor device includes an n-type well applied, in an active state, with a power supply voltage and, in a stand-by state, with a voltage higher than the power supply voltage, a p-type well applied, in the active state, with a ground voltage and, in the stand-by state, with a voltage lower than the ground voltage, and a path which, in a transition from the stand-by state to the active state, electrically couples the n-type well and the p-type well.

Abstract: A numerical control device includes: an estimation unit to estimate an accumulation amount of swarf to be produced when a tool mounted on a machine tool cuts a workpiece on the basis of a machining condition in cutting the workpiece by the tool and a value of current to be applied to a motor for moving a shaft of the machine tool when the tool cuts the workpiece. The numerical control device further includes a correction unit to correct the accumulation amount of swarf estimated by the estimation unit on the basis of a machining mode specifying a shape of swarf to be produced when the tool cuts the workpiece.

Abstract: A motor control apparatus is an apparatus that controls a motor that drives a machine apparatus that moves a subject to be moved, and includes a resolution conversion unit that converts, on the basis of a ratio of resolution of a first detector that detects a position of an object and resolution of a second detector that detects a position of the object, a detection signal that indicates the position of the object that is detected by the second detector to a signal of the resolution of the first detector. The motor control apparatus further includes a current control unit that controls a voltage to be applied to the motor on the basis of a command signal that specifies a destination position of the subject to be moved and the signal obtained by the conversion performed by the resolution conversion unit on the detection signal.

Abstract: A semiconductor device can stably execute a start-up operation in a simple manner. The semiconductor device is driven by a power supply voltage generated by a power generation device. the semiconductor device includes a load circuit for receiving the power supply voltage from a power supply node, a switch provided between the power supply node and the load circuit, a first capacitor connected to the power supply node in parallel with the switch, and a switch control circuit for controlling the switch based on a voltage level of the power supply node.

Abstract: A motor control apparatus is an apparatus that controls a motor that drives a machine apparatus that moves a subject to be moved, and includes a resolution conversion unit that converts, on the basis of a ratio of resolution of a first detector that detects a position of an object and resolution of a second detector that detects a position of the object, a detection signal that indicates the position of the object that is detected by the second detector to a signal of the resolution of the first detector. The motor control apparatus further includes a current control unit that controls a voltage to be applied to the motor on the basis of a command signal that specifies a destination position of the subject to be moved and the signal obtained by the conversion performed by the resolution conversion unit on the detection signal.

Abstract: A magnetic pole position detection device of a motor control device includes a calculation unit to estimate a magnetic pole position. The calculation unit generates a voltage pulse command for three-phase connection to actuate all of three legs included in an inverter, and a voltage pulse command for one phase opened to actuate only two of the three legs, and narrows down the estimation range on the basis of a first magnetic pole position estimated value estimated on the basis of a motor current that flows during application of the voltage pulse command for three-phase connection, and a second magnetic pole position estimated value estimated on the basis of a motor current that flows during application of the voltage pulse command for one phase opened.

Abstract: Related-art back bias generation circuits cause a problem where a long time is required for transition between an operating state and a standby state because driving power is lowered to reduce the power consumption in the standby state. A back bias generation circuit outputs a predetermined voltage. The predetermined voltage is the back bias voltage of a substrate in a standby mode. A bias control circuit stores an electrical charge while a circuit block is in an operating mode, supplies the stored electrical charge to the substrate of a MOSFET included in the circuit block when the circuit block transitions from the operating mode to the standby mode, and subsequently supplies the output of the back bias generation circuit to the substrate of the MOSFET.

Abstract: An insulation detector for highly accurately detecting or measuring, with a simple configuration, insulation resistance of a load or an apparatus to a ground or a housing and connected to an electric apparatus including one or both of an intra-apparatus capacitor and a battery, the insulation detector including an intra-insulation detector capacitor, a voltage detecting unit that detects a voltage of the intra-insulation detector capacitor, and a current-path forming switch for connecting the ground or the housing, the intra-apparatus capacitor, and the intra-insulation detector capacitor in series and forming a current path including insulation resistance of the electric apparatus. The insulation detector measures the insulation resistance by measuring a time constant of a change in the voltage of the intra-insulation detector capacitor.