Abstract: A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.

Abstract: A motor control device including: a following control unit that calculates a pre-correction torque command based on a difference between an operation command signal for commanding an operation of a motor and a detection signal resulting from detecting an operation of the motor; an adder that outputs a post-correction torque command by adding the pre-correction torque command to a correction torque command; and an electric-current control unit that outputs a drive current driving the motor based on the post-correction torque command, wherein the motor control device executes control so that the detection signal matches the operation command signal, and further including: a reference-periodic-signal computation unit; an amplitude/phase estimation unit; and a correction-torque computation unit, so that the correction torque command is updated such that a difference between the correction torque command and the post-correction torque command becomes smaller.

Abstract: Provided is a motor control device which realizes automatic adjustment of control of a motor for driving a mechanical load through a simple operation. The motor control device includes: a follow-up control unit (6) for receiving detection information of a detector (3) to output a torque command signal and output a status of motor control of a motor (1) as a control status amount signal, when a command signal regarding the motor control to be output from an upper-level controller is absent; an oscillation detection unit (9) for receiving the control status amount signal and detecting oscillation of a control status amount to output an oscillation detection signal; and an automatic adjustment unit (10) for receiving the oscillation detection signal to monitor a control status of the motor (1) and adjust a control parameter of the follow-up control unit (6) only when abnormality is detected.

Abstract: A plasma processing apparatus capable of optimizing a plasma process is provided. The plasma processing apparatus includes a control unit for controlling a minimum energy and a maximum energy of ions incident onto a substrate independently of each other such that ion energy of the ions are concentrated at a first energy band and a second energy band respectively. In the plasma processing apparatus, the oxide film is etched to form a hole within the oxide film, the first energy band is lower than a first energy value at which the oxide film is etched while the organic film is not etched, and the second energy band is higher than a second energy value at which an etching yield at an inclined surface of the hole is higher than an etching yield of an upper surface of the organic film.

Abstract: Motor drive information is sampled at a regular interval and stored in a storage unit, during a period when a normal operation is performed in accordance with a first command signal received from a controller. When an abnormality occurs, a second command signal with which a motor can be driven is internally generated from the motor drive information stored in the storage unit. When the abnormality occurs, the internally-generated second command signal is input as a command signal to a motor drive unit, and thereby it is possible to achieve a necessary retracting operation without any problem even if the first command signal cannot be obtained from the controller.

Abstract: An acceleration sensor includes an outer frame body, a heating element, a first temperature sensing element for temperature measurement and a second temperature sensing element for temperature measurement, and an operational amplifier. In the outer frame body, a fluid chamber capable of sealing a fluid inside thereof is formed. The heating element is formed on a circuit mounting surface which is a specific inner wall surface of a plurality of inner wall surfaces defining the fluid chamber. The first temperature sensing element and the second temperature sensing element are formed on the circuit mounting surface. The distance from the first temperature sensing element to the heating element is shorter than the distance from the second temperature sensing element to the heating element. The operational amplifier calculates a difference between a measurement result by the first temperature sensing element and a measurement result by the second temperature sensing element.

Abstract: A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.

Abstract: There is provided a plasma processing apparatus capable of optimizing a plasma process in response to various requirements of a micro processing by effectively controlling a RF bias function. In this plasma processing apparatus, a high frequency power RFH suitable for generating plasma of a capacitively coupling type is applied to an upper electrode 48 (or lower electrode 16) from a third high frequency power supply 66, and two high frequency powers RFL1 (0.8 MHz) and RFL2 (13 MHz) suitable for attracting ions are applied to the susceptor 16 from first and second high frequency power supplies 36 and 38, respectively, in order to control energy of ions incident onto a semiconductor wafer W from the plasma. A control unit 88 controls a total power and a power ratio of the first and second high frequency powers RFL1 and RFL2 depending on specifications, conditions or recipes of an etching process.

Abstract: A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.

Abstract: An inductor element is formed in a multiple layer lead structure including a lead, an insulative layer that insulates leads above and below, and a via provided in the insulative layer and connecting leads above and below wherein lead layers are multiply laminated layers, characterized in that: at least a portion of at least a pair of vertically adjacent leads are coiled leads; the coiled leads are connected in series, wherein current directions of vertically adjacent coiled leads are the same by a via provided on an end portion thereof, and form a serial inductance; and an inter-lead capacitance of the vertically adjacent coiled leads is larger than an inter-lead capacitance between other coiled leads formed in the same lead layer.

Abstract: The present invention provides a motor control device including a feedback control system that generates a torque command for reducing a difference between an operation command signal for commanding an operation of a motor and a detection signal of a detector attached to the motor to detect a position and speed of the motor and drives the motor. The motor control device includes a correcting unit configured to estimate an amplitude and a phase of a correction amount for suppressing the detection error included in the detection signal and sequentially update estimation values of the amplitude and the phase and a post-correction-detection-signal calculating unit configured to generate a post-correction detection signal, which is a difference between the detection signal and the correction amount, instead of the detection signal.

Abstract: Parasitic capacitance between upper and lower adjacent wirings of an inductor using a multilayer wiring layer in an insulating film formed on a base substrate is reduced. An inductor is characterized by having one go-around of go-around wiring (A-B or B-C) formed in each of at least two of adjacent wiring layers of a plurality of wiring layers 18 placed in an insulating film on a base substrate, and in that one end (B) of the one go-around of go-around wiring (A-B and B-C) formed in each of the at least two of wiring layers is connected to each other at a via and the one go-around of go-around wiring (A-B and B-C) formed in each of the at least two of wiring layers is placed at substantially the same position in a surface of the base substrate when viewed from an upper side of the base substrate.

Abstract: A motor includes a motor section and an amplifier section. The motor section and the amplifier section are electrically and mechanically connected with each other via a wire connection base using a screw. A pitch diameter for a plurality of electrical connection parts of the wire connection base with the motor section disposed on a circumference whose center is at a shaft center of the rotating shaft is set to be smaller than a pitch diameter for a plurality of electrical and mechanical connection parts with the amplifier section. The amplifier section includes a plurality of circuit substrates disposed in a layered form in a direction perpendicular to the rotating shaft, and the plurality of circuit substrates are electrically and mechanically screw-fastened to the plurality of electrical and mechanical connection parts of the wire connection base with the amplifier section via a conductive spacer.

Abstract: A motor control device including: a following control unit that calculates a pre-correction torque command based on a difference between an operation command signal for commanding an operation of a motor and a detection signal resulting from detecting an operation of the motor; an adder that outputs a post-correction torque command by adding the pre-correction torque command to a correction torque command; and an electric-current control unit that outputs a drive current driving the motor based on the post-correction torque command, wherein the motor control device executes control so that the detection signal matches the operation command signal, and further including: a reference-periodic-signal computation unit; an amplitude/phase estimation unit; and a correction-torque computation unit, so that the correction torque command is updated such that a difference between the correction torque command and the post-correction torque command becomes smaller.

Abstract: A variable inductor includes: a first inductor having two ends connected to a first terminal and a second terminal; a second inductor having two ends connected to the first terminal and the second terminal; a first node provided on the first inductor; a second node provided on the second inductor; and a switch element that switches between a conductive state and a non-conductive state between the first node and the second node.

Abstract: A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.

Abstract: An inductor element is formed in a multiple layer lead structure including a lead, an insulative layer that insulates leads above and below, and a via provided in the insulative layer and connecting leads above and below wherein lead layers are multiply laminated layers, characterized in that: at least a portion of at least a pair of vertically adjacent leads are coiled leads; the coiled leads are connected in series, wherein current directions of vertically adjacent coiled leads are the same by a via provided on an end portion thereof, and form a serial inductance; and an inter-lead capacitance of the vertically adjacent coiled leads is larger than an inter-lead capacitance between other coiled leads formed in the same lead layer.

Abstract: A first wiring layer and a plurality of second wiring layers having a thickness smaller than the first wiring layer are stacked on the semiconductor substrate. An oscillator circuit has an inductor formed by the plurality of second wiring layers. The inductor oscillates at a frequency at which the inductor and a parasitic capacitance of an inverter circuit resonate. A drain of an n-type MISFET and a drain of a p-type MISFET of the inverter circuit are connected to each other, and an output of the inductor is connected to a connection point of those drains.

Abstract: A resonance type oscillation circuit includes an inductance element which is connected between a first terminal and a second terminal, an amplifier circuit which is connected in parallel with the inductance element between the first terminal and the second terminal, and a first capacitance element which is connected between the first terminal and the second terminal. The oscillation circuit further includes a pair of lead-out regions which are provided on the way of one end and the other end of the inductance element, a switch element which is connected between the pair of lead-out regions and provides short-circuit between the pair of lead-out regions when the switch element is on, and a second capacitance element which is connected between the pair of lead-out regions in parallel with the switch element.

Abstract: A semiconductor device includes a stacked body with a recessed gas passage formed therein, a heater disposed in the stacked body, the heater being exposed on a bottom surface of the gas passage, and a plurality of thermal sensors disposed in the stacked body in such a manner that the plurality of thermal sensors sandwich the heater therebetween in an extending direction of the gas passage, the plurality of thermal sensors being exposed on the bottom surface of the gas passage. An acceleration sensor having a high affinity to the ordinary semiconductor manufacturing process can be provided.