Abstract: A battery includes a power-generating element and an insulating layer. The power-generating element includes an electrode layer, a counter-electrode layer placed to face the electrode layer, and a solid electrolyte layer located between the electrode layer and the counter-electrode layer. The insulating layer includes a first insulating film that extends inward from ends of the power-generating element in a planar view of a principal surface of the power-generating element and a second insulating film that covers a side surface of the power-generating element and that is continuous with ends of the first insulating film. The second insulating film is thinner than the first insulating film.

Abstract: A field device case is a metal field device case where a lead-in part for drawing a cable including an outer shield is provided on a tubular circumferential wall. The field device case includes: a first inner surface which is formed away from an opening end surface of the field device case in an axial direction orthogonal to the opening end surface; a second inner surface which is formed farther away from the opening end surface than the first inner surface in the axial direction; and a cable fixing member which is fixed to the first inner surface and allows the outer shield of the cable drawn by the lead-in part to be in contact with the second inner surface.

Abstract: A field device case is a metal field device case where a lead-in part for drawing a cable including an outer shield is provided on a tubular circumferential wall. The field device case includes: a first inner surface which is formed away from an opening end surface of the field device case in an axial direction orthogonal to the opening end surface; a second inner surface which is formed farther away from the opening end surface than the first inner surface in the axial direction; and a cable fixing member which is fixed to the first inner surface and allows the outer shield of the cable drawn by the lead-in part to be in contact with the second inner surface.

Abstract: A converter includes an amplifier case main body having an amplifier main body accommodated therein, and a safety cover attached to the amplifier case main body. The safety cover has a plurality of through-holes for as removal.

Abstract: A converter includes an amplifier case main body having an amplifier main body accommodated therein, and a safety cover attached to the amplifier case main body. The safety cover has a plurality of through-holes for as removal.

Abstract: A slit nozzle is positioned above a surface of a substrate placed in a rotary coater, and, while the slit nozzle is translated parallel to the surface of the substrate a coating solution is ejected from the slit nozzle toward the glass substrate under conditions such that the effects of surface tension of the solution are minimized or substantially cancelled out, to uniformly coat the coating solution on substantially the entire surface of the substrate with minimum wasting of the solution.

Abstract: A slit nozzle is positioned above a surface of a substrate placed in a rotary coater, and, while the slit nozzle is translated parallel to the surface of the substrate a coating solution is ejected from the slit nozzle toward the glass substrate under conditions such that the effects of surface tension of the solution are minimized or substantially cancelled out, to uniformly coat the coating solution on substantially the entire surface of the substrate with minimum wasting of the solution.

Abstract: A slit nozzle is positioned above an end of a glass substrate placed in an inner cup, and, while a coating solution is being ejected with reduced surface tension from the slit nozzle toward the glass substrate, the slit nozzle is translated parallel to the surface of the glass substrate to roughly coat the coating solution on substantially the entire surface of the glass substrate. Thereafter, the upper opening of the inner cup and the upper opening of an outer cup around the inner cup are closed by respective lids, and then the inner cup is rotated to rotate the glass substrate for thereby spreading the coated solution uniformly over the surface of the glass substrate under centrifugal forces.

Abstract: A tubular reaction chamber is mounted on an annular insulating plate disposed on a grounded metallic base plate. A cylindrical outer electrode connected to a high-frequency power supply is disposed around said tubular reaction chamber, and a cylindrical inner electrode is disposed in said reaction chamber coaxially with said cylindrical outer electrode. The cylindrical inner electrode has a plurality of inlet holes defined therein, and a lower end disposed in an opening defined in the metallic base plate and fixed to said metallic base plate. A holder is disposed in said cylindrical inner electrode for supporting a plurality of wafers at spaced intervals.

Abstract: A plasma processing apparatus for etching, ashing, or otherwise processing silicon wafers has a pair of spaced reaction chambers each for processing a silicon wafers in a plasma, a pair of spaced cassette table mechanisms each for supporting a wafer cassette which houses a plurality of wafers therein, and a transfer robot disposed between the pair of spaced reaction chambers and the pair of spaced cassette table mechanisms, for transferring the wafers, one at a time, between the wafer cassette supported by one of the workpiece table mechanisms and one of the reaction chambers. Each of the cassette table mechanisms has a turntable for placing the wafer thereon, the turntable being rotatable to orient the wafer cassette out of physical interference with the robot arm of the transfer robot.

Abstract: An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

Abstract: A plasma processing apparatus for ashing semi-conductors wafers has a vertically elongate cylindrical chamber for generating a plasma for processing a workpiece housed therein with heat applied thereto. The cylindrical chamber has upper and lower open ends closed respectively by upper and lower chamber plates. A cooling coil is positioned above the upper chamber plate. A temperature controller actuates a fan unit to force an air flow over the cooling coil to the upper chamber plate for keeping the temperature in the cylindrical chamber within a predetermined range. The plasma processing apparatus includes inner and outer electrodes disposed inside and outside, respectively, of the cylindrical chamber, and a Radio Frequency generator for generating the plasma between the inner and outer electrodes.

Abstract: An electron cyclotron resonance plasma chemical vapor deposition system has a reaction chamber for introducing a reaction gas therein, the reaction chamber housing a table for supporting a semiconductor wafer. A microwave oscillator is connected to the reaction chamber through a waveguide for generating and introducing a microwave into the reaction chamber to produce a plasma in the reaction chamber for activating the reaction gas to etch or deposit a film on the semiconductor wafer in the reaction chamber. A pair of upper and lower coils is disposed around the reaction chamber for generating respective magnetic fields in opposite directions in the reaction chamber. The magnetic fields cancel out each other creating a region with substantially no flux density in the magnetic fields between the coils. A bias voltage is applied to the table to attract the plasma to the table in a uniform manner.

Abstract: A conveyor system having conveyor pieces connected together, without gaps, and links having projections engageable with sprockets connected in an endless manner to thereby constitute an endless conveyor. The arrangement permits powdery goods or fluid goods to be conveyed without falling or spilling from the link portions of the loading surface of the endless conveyor. A plurality of side protect fins are placed one on another without gaps on the sides of the endless conveyor in its width direction. This allows powdery goods or fluid goods to be conveyed without falling or spilling from the overlapping portions of the side protect fins at the sides of the loading surface.

Abstract: Disclosed is a conveyor system with movable partitions, which is so designed that powdery goods, grainy goods or other shapeless goods, or loose stuff, such as molded resin articles, can surely and safely be conveyed, when excessive resistance is applied to the lower end portion of a partition moving within a load-receiving tray, the partition swings rearward to run free of the load, when goods to be conveyed get stuck at the lower end portion of the partition, the partition moves in that state in the tray dragging the goods along, and when the partition reaches the front sprocket in the running direction and the partition-attached portion of an endless caterpillar engages with the sprocket and rotates about a quarter, the partition is flipped over, permitting the goods to be set free or removed.

Abstract: An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

Abstract: An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by a CVD coating process.

Abstract: An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by CVD coating process.

Abstract: A plasma reactor includes a chamber, a specimen such as a wafer or the like supported in the chamber, a device for generating a plasma in the chamber, and at least one electromagnetic coil disposed coaxially around the chamber. The specimen is supported parallel to a magnetic field generated by the electromagnetic coil. High-density and high-energy charged particles in the plasma collide perpendicularly with the surface of the specimen to treat the specimen by way of etching or the like.