Abstract: Disclosed is a device for preventing the scattering of ejected molded articles in a plastic forming. The scattering prevention device includes screens made of a synthetic resin film and disposed at both sides of molds mounted on a fixed die plate and a movable die plate and inside a space defined by tie bars in such a manner that the molds can be covered, and magnetic assemblies coupled to the two lateral ends of each of the screens for fixing the screen to the molds or die plates. The synthetic resin film screens are mounted on the molds or the die plates only by the use of the magnetic assemblies. Each of the screen follows the clamping of the mold, and is contracted and folded. It is extended when it follows the opening of the movable mold.

Abstract: A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.

Abstract: A slidable vibration-isolating rubber member such as a stabilizer bushing or an eye bushing, interposed between two members such that the rubber member is slidable relative to at least one of the two members. The rubber member is formed from a rubber composition which comprises 100 parts by weight of a rubber material, and 2-20 parts by weight of a silicone oil.

Abstract: The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.

Abstract: Disclosed is a device for preventing the scattering of ejected molded articles in a plastic forming. The scattering prevention device includes screens made of a synthetic resin film and disposed at both sides of molds mounted on a fixed die plate and a movable die plate and inside a space defined by tie bars in such a manner that the molds can be screened, and magnetic assemblies coupled to each of two lateral ends of each of the screens for fixing the screen to the opposed molds or die plates, so that, while the molds are open, the screens are extended, while the molds are being clamped, the screens are contracted and folded. The height of each of the screens is set such as to be smaller than a gap between the upper and lower tie bars, so that the screens can be folded outwardly from between the upper and lower tie bars.

Abstract: A thin-film coating apparatus for coating a thin film on a material includes a casing, a spinner mounted in the casing for rotating the material, and a pipe disposed upwardly of the spinner and having in a lower end thereof a nozzle for dropping a film-forming coating solution onto the material. The casing comprises an annular upper plate, a cylindrical circumferential wall, and a bottom plate. The annular upper plate has defined therein gas flow passages for passage of an inert gas such as an N.sub.2 gas introduced from an exterior supply source, and gas ejector holes defined in the upper surface of the annular upper plate in communication with the gas flow passages for ejecting the inert gas toward the pipe.

Abstract: An equipment (100; 200) for thermal stabilization process of photoresist pattern on semiconductor wafer comprises an ultraviolet lamp (20) by which a photoresist pattern formed on a semiconductor wafer (W) put in a process chamber (S) under vacuum pressure is irradiated with ultraviolet rays of a predetermined strength, and a heater (10) for heating the wafer to a predetermined temperature.

Abstract: A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.

Abstract: A high-frequency oscillator including an oscillation circuit (1) having a quartz crystal (X) and an amplifying element (Q.sub.2), a power amplifying circuit (3) for amplifying the output of the oscillation circuit, and a control system (Q.sub.7, 6) for varying a bias voltage of the amplifying element to thereby control the output power of the power amplification circuit. The control system comprises an FET (Q.sub.7) connected at the drain thereof to the amplifying element, and a control circuit (6) for applying a control signal to the gate of the FET.

Abstract: An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.

Abstract: An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.

Abstract: The invention provides a novel automatic apparatus for the continuous treatment of wafer materials, e.g. of silicon semiconductor, with gas plasma provided with a plural number of the gas plasma reaction chambers, transfer devices for bringing the wafer materials into and out of each of the reaction chambers and automatic control mechanism for controlling the individual parts of the apparatus in linkage operation. The transfer devices are composed of a main transfer conveyor extending in parallel with the array of the reaction chambers and over whole length of the array, a plural number of branched transfer conveyors each connecting one of the reaction chambers with the main transfer conveyor, a mechanism for transferring the wafer between the main transfer conveyor and one of the branched transfer conveyor and a mechanism for bringing the wafer material from the branched transfer conveyor to the gas plasma reaction chamber or vice versa.

Abstract: The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.

Abstract: An apparatus for automatic semi-batch sheet treatment of wafers such as high-purity silicon semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a wafer carrying mechanism, a reaction chamber with an opening at the bottom, a wafer table disposed beneath the opening and provided with a sub-table for mounting the wafer, and control devices for driving the above elements in linkage motion. The wafer carrying mechanism is substantially composed of a conveyor for carrying a wafer to be treated, a pair of open-close type wafer carrying wire conveyors which are spaced in parallel at a certain distance and open and close in linkage motion so that the wafer table may pass vertically therethrough to be fixed vacuum-tightly to the reaction chamber, a mechanism for opening and closing the wire conveyors and a treated wafer carrying conveyor. The subtable is vertically movable and capable of passing the wire conveyors when closed.

Abstract: An apparatus for the treatment of semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a first wafer carrying means for a wafer to be treated, a reaction chamber, a second wafer carrying means for a treated wafer, and a control means for driving respective elements thereof in linkage motion. The first wafer carrying means has a first arm type wafer carrying means, which comprises a pair of guide rails, a pair of sliders mounted on the guide rails, respectively, and a pair of first arms for carrying the wafer to be treated. The reaction chamber is provided with a pair of slits for taking the wafer into and out of the reaction chamber, a pair of open-close type vacuum sealing devices mounted on the slits, respectively. Similarly, the second wafer carrying means has a second arm type wafer carrying means.

Abstract: An improved apparatus for plasma treatment of silicon semiconductor wafers is proposed in which the end point of the plasma etching or ashing can be readily detected by monitoring with an optical fiberscope penetrating the wall of the plasma reaction chamber with one terminal located inside the plasma reaction chamber with a condenser lens attached thereto and the other terminal located outside the plasma reaction chamber at a distanced position free from the influence of the high frequency electric field inherent to plasma generation which otherwise interferes with the photoelectric recording by the photocell connected to the outer terminal of the optical fiberscope.

Abstract: An improved apparatus for the automatic handling of wafer materials is proposed for the plasma treatment of the wafers such as high-purity silicon semiconductor wafers. In this apparatus, the wafer carried by a carrier means to a position neighboring to a wafer table is picked up by a movable pick-up means and placed on the wafer table where it is subjected to the plasma treatment after the wafer table is fixed vacuum-tightly to a plasma reaction chamber. After completion of the treatment, the wafer is taken out by a second movable pick-up means and carried away by another carrier means to the succeeding processing step. Thus a possibility of full automatization of wafer processing is provided.

Abstract: An automatic apparatus for the treatment of wafer materials by plasma reaction is proposed in which the wafers are sent into the plasma reaction chamber one by one and yet the atmospheric air is never introduced into the reaction chamber between the successive reaction steps for two wafers by use of two rotary vacuum valves which also serve as wafer transmitters into and out of the reaction chamber and a rotary wafer table inside the reaction chamber, all being installed on an inclined base table to effect the downward spontaneous movement of the wafer under treatment by gravity.