Abstract: A semiconductor manufacturing apparatus is capable of reducing power consumption. The semiconductor manufacturing apparatus 1 includes a processing chamber 2 that has a top surface 2a and forms a processing space S therein; a mounting table 3 provided in the processing space S; an upper electrode 20 provided above the mounting table 3 to face the mounting table 3; heaters 35 and 36 provided around the upper electrode 20 and below the top surface 2a of the processing chamber 2 and configured to heat the upper electrode 20; and a heat insulating unit 50, mounted on the top surface 2a of the processing chamber 2, having a plate-shaped member 51 and a heat insulating member 52 that is provided on one main surface 51a of the plate-shaped member 51.

Abstract: A film forming apparatus including a raw material supplying section for supplying a raw material of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the formed raw material gas, and a filter on the transport path for the raw material gas from the raw material vaporizing section to the film forming section. An outer edge of the filter is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member, which is less prone to be deformed by a loading in the pressing direction than the outer edge, and is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the supporting member.

Abstract: A semiconductor manufacturing apparatus is capable of reducing power consumption. The semiconductor manufacturing apparatus 1 includes a processing chamber 2 that has a top surface 2a and forms a processing space S therein; a mounting table 3 provided in the processing space S; an upper electrode 20 provided above the mounting table 3 to face the mounting table 3; heaters 35 and 36 provided around the upper electrode 20 and below the top surface 2a of the processing chamber 2 and configured to heat the upper electrode 20; and a heat insulating unit 50, mounted on the top surface 2a of the processing chamber 2, having a plate-shaped member 51 and a heat insulating member 52 that is provided on one main surface 51a of the plate-shaped member 51.

Abstract: A film forming apparatus including a raw material supplying section for supplying a raw material of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the formed raw material gas, and a filter on the transport path for the raw material gas from the raw material vaporizing section to the film forming section. An outer edge of the filter is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member, which is less prone to be deformed by a loading in the pressing direction than the outer edge, and is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the supporting member.

Abstract: A semiconductor manufacturing apparatus includes a container (Xb, Ab, Bb, or Cb) for receiving a liquid material, a liquid material supply section for supplying the liquid material from the container, a liquid vaporizing section for vaporizing the liquid material supplied from the liquid material supply section to generate a gas, a processing section for using the gas supplied from the liquid vaporizing section to execute deposition processing, an exhaust section for exhausting a gas from the processing section, and a liquid level detector (Xs, As, Bs, or Cs) arranged in a bottom of the container to detect a liquid level of the liquid material based on an acoustic wave.

Abstract: A shower head formed by stacking a shower base, a gas diffusion plate, and a shower plate and supplying material gas and oxidizer gas to a wafer on a loading table through a first gas diffusion part and a second gas diffusion part formed in both faces of the gas diffusion plate, first gas outlets formed in the shower plate and communicating with a first gas diffusion space, and second gas outlets formed in the shower plate and communicating with a second gas diffusion space. A plurality of heat transfer columns fitted closely to the lower surface of the shower base are installed in the first gas diffusion part so that portions therebetween can form the first gas diffusion space, and radiant heat from the loading table is transmitted by the heat transfer columns in the thickness direction of the shower head.