Abstract: According to an embodiment, high-frequency signal transmission device includes a connector and a wiring board with two cable ends. The connector includes contact terminals with signal contact terminals and ground contact terminals. In a wiring board, signal contact pads, ground contact pads and one or more ground layers are formed on at least one of the cable ends. The ground contact terminal includes an arm portion bent so as to locally abut against the ground contact pad at a contact portion. The contact portion of the arm portion is positioned so as to (i) at least partially abut against a surface of a covering portion of the ground contact pad covering the first penetrating electrode directly above the first penetrating electrode, or (ii) abut against the ground contact pad near an outer periphery of the covering portion, when the wiring board is electrically connected to the connector.

Abstract: When the surface of a semiconductor wafer, a photomask or the like sample is charged by irradiation with a charged particle beam, the charging is liable to hamper image observation, inspection and handling. Therefore, the sample and the surface or vicinity of the sample being charged by an electron beam or the like is held in an atmosphere or a reduced pressure atmosphere or in a predetermined gaseous atmosphere within a preliminary evacuation chamber, a sample chamber or the like, containing a soft X-ray generator which irradiates the sample or the vicinity thereof with soft X-rays which are controlled to generate positive ions and negative ions and remove charges on the surface of the sample.

Abstract: A charged particle beam apparatus comprising a preparatory evacuation chamber (15 in FIG. 1A) into which a sample (12) is conveyed and which is preliminarily evacuated, an ultraviolet irradiation unit (21) which is disposed in the preparatory evacuation chamber (15) and which irradiates the surface of the sample (12) conveyed into the preparatory evacuation chamber (15), with ultraviolet rays for a predetermined time period, and a sample chamber (16) into which the sample (12) is conveyed in the preliminarily evacuated state of the preparatory evacuation chamber (15) or from which the sample (12) is conveyed into the preparatory evacuation chamber (15), wherein the ultraviolet irradiation of the sample (12) by the ultraviolet irradiation unit (21) is performed before the conveyance of the sample (12) into the sample chamber (16), or/and after the conveyance thereof from the sample chamber (16), thereby to remove contamination on the surface of the sample (12).

Abstract: A charged particle beam apparatus comprising a preparatory evacuation chamber (15 in FIG. 1A) into which a sample (12) is conveyed and which is preliminarily evacuated, an ultraviolet irradiation unit (21) which is disposed in the preparatory evacuation chamber (15) and which irradiates the surface of the sample (12) conveyed into the preparatory evacuation chamber (15), with ultraviolet rays for a predetermined time period, and a sample chamber (16) into which the sample (12) is conveyed in the preliminarily evacuated state of the preparatory evacuation chamber (15) or from which the sample (12) is conveyed into the preparatory evacuation chamber (15), wherein the ultraviolet irradiation of the sample (12) by the ultraviolet irradiation unit (21) is performed before the conveyance of the sample (12) into the sample chamber (16), or/and after the conveyance thereof from the sample chamber (16), thereby to remove contamination on the surface of the sample (12).

Abstract: An electron beam apparatus has an optical axis, an electron beam source for generating an electron beam directed along the optical axis, and a magnetic field lens having an axis coincident with the optical axis for focusing the electron beam onto a sample which is subjected to a negative voltage so that secondary electrons are emitted from the sample. The magnetic field lens has a conductive cylinder surrounding a part of the optical axis to permit the passage therethrough of an electron beam from the electron beam source. A first detector detects secondary electrons emitted by the sample in a direction away from the optical axis and is disposed at a position generally confronting the conductive cylinder. A second detector is disposed over the conductive cylinder. A Wien filter deflector deflects secondary electrons emitted by the sample toward and for detection by the second detector. The Wien filter deflector is disposed on the optical axis and between the conductive cylinder and the second detector.

Abstract: A magnetic pole of a magnetic field type lens is divided into a first magnetic pole section that is at ground potential, and a second magnetic pole section facing a sample and to which a negative high voltage is applied, the first magnetic pole section and the second magnetic pole section 212 being electrically insulated from each other, and an electric field type bi-potential lens is made up of an electrode attached to the first magnetic pole section so as to surround an electron beam path. High resolution observation with small chromatic aberration factor Cs, Cc is made possible without forming a positive high voltage section inside an electron beam path of a lens barrel.

Abstract: A coating film transfer tool comprises a supply reel that delivers a transfer tape formed by coating a base tape with a coating film, a transfer head that presses the transfer tape against a receiving surface to transfer the coating film thereto, a take-up reel for taking up the base tape, and a belt-type driving mechanism cooperatively connecting the supply reel with the take-up reel. A belt guide for guiding the belt is disposed between the supply reel and the take-up reel. This transfer tool reduces backlash of the supply reel and more reliably transfers coating film to a desired position on a receiving surface.

Abstract: In order to ensure that an electromagnetic field lens is capable of high-resolution observation using a magnetic field lens without leakage of magnetic flux, there is provided a magnetic field superimposing-type lens 1 for focusing an electron beam onto a sample 3 so as to irradiate the sample 3 is provided with an upper magnetic pole 213 a long way from the sample 3 and a lower side magnetic pole 214 close to the sample 3, with electrical insulation being provided between the upper magnetic pole 213 and the lower magnetic pole 214 by a ferrite insulator 215 provided between the upper magnetic pole 213 and the lower magnetic pole 214 in an integral manner with the magnetic poles so that the upper magnetic pole 213 and the lower magnetic pole 214 may be held at different potentials. There is therefore no leak in flux from between the upper magnetic pole 213 and the lower-magnetic pole 214, the chromatic aberration coefficient Cc can be made small, and high-resolution observation of the sample can be achieved.

Abstract: In the catalyst-applying treatment, the sensitization treatment is carried out by dipping the base material which has been subjected to the preliminary treatment in a tin chloride solution applied with a predetermined amount of fluorine type anionic surfactant, and the activation treatment is carried out by dipping the base material which has been subjected to the preliminary treatment in a palladium chloride solution applied with a predetermined amount of fluorine type anionic surfactant.

Abstract: In order to efficiently detect discharged electrons at an electromagnetic field lens, there is provided an electron beam apparatus for focusing an electron beam 1 from an electron gun running along an optical axis X so as to be incident to a single pole-piece lens with an electrostatic bipotential lens 10 onto a sample 2 subjected to a negative voltage and detecting secondary electrons 8 discharged from the sample 2, wherein a conductive first cylinder 51 encompassing part of the optical axis X and permitting the passage of the electron beam 1 from the electron gun, a first detector 41 for detecting secondary electrons 8 of the secondary electrons 8 that did not pass through the first cylinder 51, and a second detector 42 for detecting secondary electrons 8 of the secondary electrons 8 that did pass through the first cylinder 51are provided within the single pole-piece lens with an electrostatic bipotential lens 10, with the secondary electrons 8 then being efficiently sent to the second detector 42 by a Wien

Abstract: In order to ensure that an electromagnetic field lens is capable of high-resolution observation using a magnetic field lens without leakage of magnetic flux, there is provided a magnetic field superimposing-type lens 1 for focusing an electron beam onto a sample 3 so as to irradiate the sample 3 is provided with an upper magnetic pole 213 a long way from the sample 3 and a lower side magnetic pole 214 close to the sample 3, with electrical insulation being provided between the upper magnetic pole 213 and the lower magnetic pole 214 by a ferrite insulator 215 provided between the upper magnetic pole 213 and the lower magnetic pole 214 in an integral manner with the magnetic poles so that the upper magnetic pole 213 and the lower magnetic pole 214 may be held at different potentials. There is therefore no leak in flux from between the upper magnetic pole 213 and the lower-magnetic pole 214, the chromatic aberration coefficient Cc can be made small, and high-resolution observation of the sample can be achieved.

Abstract: Secondary electrons emitted by a sample placed within a lens magnetic field are detected by a plurality of secondary electron detectors to enable observation of a concave/convex sample surface. In a scanning electronic beam apparatus having upper and lower electrodes built in a single-pole magnetic-field type lens to place a sample within a lens magnetic field, a negative voltage is applied to the sample and the lower electrode opposed thereto while a zero or positive voltage is applied to the upper electrode, whereby an electric field for suppressing the helical motion of a secondary electron given off from the sample due to electron-beam irradiation is produced within an objective magnetic field space above the sample. The secondary electrons are detected by a division-type MCP or a plurality of scintillator-type secondary electron detectors sandwiching the optical axis.

Abstract: The invention is to observe semiconductor wafers with higher resolution at a low acceleration voltage—in particular, achieving such high-resolution observability when a wafer is inclined or tilted at large angles. A composite lens is used which consists essentially of a single-pole or monopole magnetic field type lens and an electrostatic field invasive lens whereas an electrode of the electrostatic field invasive lens which opposes the wafer is made of a magnetic material while letting a high voltage of the negative polarity be applied to this electrode and the wafer. Even when the wafer is tilted, any astigmatism and axis failure will hardly occur.

Abstract: A magnetic pole of a magnetic field type lens is divided into a first magnetic pole section that is at ground potential, and a second magnetic pole section facing a sample and to which a negative high voltage is applied, the first magnetic pole section and the second magnetic pole section 212 being electrically insulated from each other, and an electric field type bi-potential lens is made up of an electrode attached to the first magnetic pole section so as to surround an electron beam path. High resolution observation with small chromatic aberration factor Cs, Cc is made possible without forming a positive high voltage section inside an electron beam path of a lens barrel.

Abstract: The secondary electrons, from a sample placed within a lens magnetic field, are detected by a plurality of secondary electron detectors, thereby effectively observing a concave/convex in a sample surface. In a scanning electronic beam apparatus having upper and lower electrodes built in a single-pole magnetic-field type lens to place a sample within a lens magnetic field, a negative voltage is applied to the sample and the lower electrode opposed thereto while a zero or positive voltage is applied to the upper electrode, whereby an electric field for suppressing the helical motion of a secondary electron given off from the sample due to electron-beam irradiation is caused within a region of from the sample to an objective lens magnetic field space closer to an electron source. The secondary electron is detected by a division-type MCP or a plurality of scintillator-type secondary electron detectors arranged sandwiching the optical axis.

Abstract: A wiring board structure has an insulating base having at least one projection located thereon, wherein the insulating base and the at least one projection are integrally formed from a same piece of insulating material. The wiring board structure also has at least one lead located on the insulating base, wherein a part of the at least one lead covers the at least one projection to form at least one conductive bump.

Abstract: In an object lens of a type of generating a magnetic field of the side of a specimen and maing a principal plan of the lens close to the specimen for reducing aberration coefficients, an inner magnetic pole is formed in a shape of a cone having an angle of 30° of less to an optical axis and an outer magnetic pole is also provided inside the cone by which even the large-size specimen can be inclined up to about 60° and the large-size specimen can be observed with high resolution even when the specimen is inclined at a high angle.

Abstract: A structure of a conductive bump in a wiring board having a wiring pattern on a surface of an insulating base, characterized in that a local portion of the insulating base is raised from the surface of the insulating base to form a projection and a surface of the projection is covered with a part of a lead forming the wiring pattern to form a conductive bump.

Abstract: The invention is to observe semiconductor wafers with higher resolution at a low acceleration voltage—in particular, achieving such high-resolution observability when a wafer is inclined or tilted at large angles. A composite lens is used which consists essentially of a single-pole or monopole magnetic field type lens and an electrostatic field invasive lens whereas an electrode of the electrostatic field invasive lens which opposes the wafer is made of a magnetic material while letting a high voltage of the negative polarity be applied to this electrode and the wafer. Even when the wafer is tilted, any astigmatism and axis failure will hardly occur.