Abstract: Usability improvement is achievable with respect to use of screen divisional display of windows of plural applications. Provided is an information processing apparatus including a control unit that displays divisional display information on a display screen as information associated with screen divisional display of windows of plural applications on the display screen, on the basis of a trigger operation, and displays the windows of the plural selected applications on the basis of a following operation for the displayed divisional display information while dividing display of the windows into at least a first region and a second region of the display screen. The following operation includes an operation that selects the applications for which the screen divisional display is to be executed.

Abstract: Usability improvement is achievable with respect to use of screen divisional display of windows of plural applications. Provided is an information processing apparatus including a control unit that displays divisional display information on a display screen as information associated with screen divisional display of windows of plural applications on the display screen, on the basis of a trigger operation, and displays the windows of the plural selected applications on the basis of a following operation for the displayed divisional display information while dividing display of the windows into at least a first region and a second region of the display screen. The following operation includes an operation that selects the applications for which the screen divisional display is to be executed.

Abstract: [Problem] It becomes possible to reduce a burden of an operation related to a small terminal that includes a touch panel and that is used with one hand. [Solution] An information processing device including a control unit that determines, on the basis of a detection position of an operating finger of a user on a side surface with respect to a display screen, a region to display predetermined information on the display screen, and that determines, on the basis of the detection position, a region to receive an operation by the operating finger from a region that is a combination of the display screen and the side surface is provided.

Abstract: An information terminal enables a user to simply and easily confirm a plurality of pieces of update information handled by a plurality of various application programs without any troublesome operation. An information storage stores a plurality of different types of information. An update information storage stores a part of information updated in the information storages as update information associated with the respective types. An update information manager monitors an information update in the information storages and stores, when an information update is made in the information storages, the part of the updated information in the update information storage as update information associated with the respective types. Further, an information selector extracts the update information stored in the update information storage in time series and outputs them to display them on a screen.

Abstract: To make it possible to significantly reduce a burden on a user at a time of a classification of image files added or updated, for example, and thus facilitate association with other content data. An image detector/register (20) detects an image file that is unregistered or updated, and structures and manages a list of the image files. A face rectangular detector (21) detects a face rectangle in the image files detected, associates information on the face rectangle with the image file, and stores the information. A similar face classification section (22) calculates an amount of feature of the face rectangle, compares the amount of feature calculated with amounts of feature of different face rectangles already calculated and classified into groups, calculates a similarity between the face rectangle and the face rectangles of the different face rectangles in the respective groups, and classifies and manages the face rectangles in accordance with a result of the similarity calculation.

Abstract: Information storages store a plurality of different types of information. An update information storage stores a part of information updated in the information storages as update information associated with the respective types. An update information manager monitors an information update in the information storages and stores, when an information update is made in the information storages, the part of the updated information in the update information storage as update information associated with the respective types. Further, an information selector extracts the update information stored in the update information storage in time series and outputs them to display them on a screen.

Abstract: To make it possible to significantly reduce a burden on a user at a time of a classification of image files added or updated, for example, and thus facilitate association with other content data. An image detector/register (20) detects an image file that is unregistered or updated, and structures and manages a list of the image files. A face rectangular detector (21) detects a face rectangle in the image files detected, associates information on the face rectangle with the image file, and stores the information. A similar face classification section (22) calculates an amount of feature of the face rectangle, compares the amount of feature calculated with amounts of feature of different face rectangles already calculated and classified into groups, detector calculates a similarity between the face rectangle and the face rectangles of the different face rectangles in the respective groups, and classifies and manages the face rectangles in accordance with a result of the similarity calculation.

Abstract: An information terminal enables a user to simply and easily confirm a plurality of pieces of update information handled by a plurality of various application programs without any troublesome operation. An information storage stores a plurality of different types of information. An update information storage stores a part of information updated in the information storages as update information associated with the respective types. An update information manager monitors an information update in the information storages and stores, when an information update is made in the information storages, the part of the updated information in the update information storage as update information associated with the respective types. Further, an information selector extracts the update information stored in the update information storage in time series and outputs them to display them on a screen.

Abstract: The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.

Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

Abstract: Oxygen is doped in a quantum well active layer. First, an n-type In0.02Ga0.98N barrier layer 550 of 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, O2 at 20 sccm, and NH3 at 10 slm, on the n-type GaN optical guide layer 405. Next, a molar flow rate of TMI is increased to 50 sccm, and an undoped In0.2Ga0.8N well layer 553 of 3 nm is formed. This process is repeated three cycles, and finally, the process is completed with the n-type In0.02Ga0.98N barrier layer 550. A p-type Al0.2Ga0.8N cap layer 407 whose thickness is 20 nm is formed by supplying TMG at 15 sccm, TMA at 5 sccm, and (EtCp)2Mg at 5 sccm and NH3 at 10 slm, on a multi-quantum well structure active layer 420 formed in this way.

Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

Abstract: The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.

Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

Abstract: Oxygen is doped in a quantum well active layer. First, an n-type In0.02Ga0.98N barrier layer 550 of 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, O2 at 20 sccm, and NH3 at 10 slm, on the n-type GaN optical guide layer 405. Next, a molar flow rate of TMI is increased to 50 sccm, and an undoped In0.2Ga0.8N well layer 553 of 3 nm is formed. This process is repeated three cycles, and finally, the process is completed with the n-type In0.02Ga0.98N barrier layer 550. A p-type Al0.2Ga0.8N cap layer 407 whose thickness is 20 nm is formed by supplying TMG at 15 sccm, TMA at 5 sccm, and (EtCp)2Mg at 5 sccm and NH3 at 10 slm, on a multi-quantum well structure active layer 420 formed in this way.

Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

Abstract: A semiconductor device and method of forming a current block layer structure includes the steps of providing dielectric stripe masks defining at least a stripe-shaped opening on a surface of a compound semiconductor region having a hexagonal crystal structure, and selectively growing at least a current block layer of a compound semiconductor having the hexagonal crystal structure on the surface of the compound semiconductor region by use of the dielectric stripe masks.

Abstract: A buffer layer 602 and a gallium nitride contact layer 603 are formed on a sapphire (0001) plane substrate 101 by a MOVPE process, and then a silicon nitride mask 102 is formed on the surface. On the silicon nitride mask 102 is formed a rectangular opening whose longer and shorter sides are in the directions of [11-20] and [1-100] of the gallium nitride. On the opening is formed a gallium nitride semiconductor layer 104 by a MOVPE process, whose side face, the (11-20) plane is used as a resonator end face 103.