Patents by Inventor Akitaka Soeno

Akitaka Soeno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF TRENCH GATE
    Publication number: 20100276729
    Abstract: IGBT 10 comprises an n+-type emitter region, an n?-type drift region, a p-type body region disposed between the emitter region and the drift region, a trench gate extending in the body region from the emitter region toward the drift region, and a projecting portion of an insulating material being in contact with a surface of the trench gate. At least a part of the projecting portion projects within the drift region.
    Type: Application
    Filed: December 2, 2008
    Publication date: November 4, 2010
    Applicants: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Sachiko Aoi, Takahide Sugiyama, Takashi Suzuki, Akitaka Soeno, Tsuyoshi Nishiwaki
  • SEMICONDUCTOR DEVICE
    Publication number: 20090278166
    Abstract: A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.
    Type: Application
    Filed: May 7, 2009
    Publication date: November 12, 2009
    Inventors: Akitaka SOENO, Yukihiro Hisanaga