Patents by Inventor Akiyoshi Mutou

Akiyoshi Mutou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device with a silicon-germanium gate electrode
    Patent number: 7172934
    Abstract: A SiO2 film serving as a gate dielectric film is formed on a silicon substrate. A seed Si film is formed on the gate dielectric film. A thin SiGe film of a thickness of 50 nm or less is formed on the seed Si film at a temperature between 450° C. and 494° C., and a thin cap Si film of a thickness of 0.5 nm to 5 nm is continuously formed on the thin SiGe film at the same temperature.
    Type: Grant
    Filed: February 15, 2006
    Date of Patent: February 6, 2007
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Akiyoshi Mutou
  • Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof
    Publication number: 20060138518
    Abstract: A semiconductor includes a gate electrode having a SiGe film on a a gate dielectric film that is on a silicon substrate. The gate dielectric film includes an underlying interfacial layer on the substrate and a high-k dielectric film having higher dielectric constant than the underlying interfacial layer. The gate electrode includes a seed Si film on the high-k dielectric film and a SiGe film on the seed Si film. The seed Si film has a thickness of 0.1 nm or more and smaller than 5 nm.
    Type: Application
    Filed: February 24, 2006
    Publication date: June 29, 2006
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Akiyoshi Mutou, Hiroshi Ohji
  • Method of manufacturing a semiconductor device with a silicon-germanium gate electrode
    Publication number: 20060131559
    Abstract: A SiO2 film serving as a gate dielectric film is formed on a silicon substrate. A seed Si film is formed on the gate dielectric film. A thin SiGe film of a thickness of 50 nm or less is formed on the seed Si film at a temperature between 450° C. and 494° C., and a thin cap Si film of a thickness of 0.5 nm to 5 nm is continuously formed on the thin SiGe film at the same temperature.
    Type: Application
    Filed: February 15, 2006
    Publication date: June 22, 2006
    Applicant: Sharp Kabushiki Kaisha
    Inventor: Akiyoshi Mutou
  • Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof
    Publication number: 20050045938
    Abstract: A semiconductor includes a gate electrode having a SiGe film on a a gate dielectric film that is on a silicon substrate. The gate dielectric film includes an underlying interfacial layer on the substrate, and a high-k dielectric film having higher dielectric constant than the underlying interfacial layer. The gate electrode includes a seed Si film on the high-k dielectric film and a SiGe film formed on the seed Si film. The seed Si film has a thickness of 0.1 nm or more and smaller than 5 nm.
    Type: Application
    Filed: August 26, 2004
    Publication date: March 3, 2005
    Applicant: Semiconductor Leading Edge Technologies, Inc.
    Inventors: Akiyoshi Mutou, Hiroshi Ohji
  • Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof
    Publication number: 20040238895
    Abstract: A SiO2 film serving as a gate dielectric film is formed on a silicon substrate. A seed Si film is formed on the gate dielectric film. A thin SiGe film of a thickness of 50 nm or less is formed on the seed Si film at a temperature between 450° C. and 494° C., and a thin cap Si film of a thickness of 0.5 nm to 5 nm is continuously formed on the thin SiGe film at the same temperature.
    Type: Application
    Filed: May 7, 2004
    Publication date: December 2, 2004
    Applicant: Semiconductor Leading Edge Technologies, Inc.
    Inventor: Akiyoshi Mutou
  • Semiconductor device with NMOS including Si:C channel region and/or PMOS including SiGe channel region
    Patent number: 6774409
    Abstract: A semiconductor device comprises: a semiconductor substrate on which a silicon germanium film, a carbon-containing silicon film and a silicon film are formed in this order and a gate electrode on the semiconductor substrate with intervention of a gate oxide film, wherein a channel region of the semiconductor device the is formed in the carbon-containing silicon film or wherein a channel region of the semiconductor device is formed in the silicon germanium film.
    Type: Grant
    Filed: March 8, 2002
    Date of Patent: August 10, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tomoya Baba, Katsumasa Fujii, Akiyoshi Mutou
  • Semiconductor device
    Publication number: 20020125502
    Abstract: A semiconductor device comprises: a semiconductor substrate on which a silicon germanium film, a carbon-containing silicon film and a silicon film are formed in this order and a gate electrode on the semiconductor substrate with intervention of a gate oxide film, wherein a channel region of the semiconductor device the is formed in the carbon-containing silicon film or wherein a channel region of the semiconductor device is formed in the silicon germanium film.
    Type: Application
    Filed: March 8, 2002
    Publication date: September 12, 2002
    Inventors: Tomoya Baba, Katsumasa Fujii, Akiyoshi Mutou