Abstract: The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof. The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces.

Abstract: In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle ?, based on a total reflection critical angle ?c at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior.

Abstract: A semiconductor laser device 3 includes an n-type clad layer 13, an active layer 15, and a p-type clad layer 17. The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15. The waveguide 4 extends along a central axial line B that is curved at a substantially constant curvature (curvature radius R). In such a waveguide 4, of the light components that resonate inside the waveguide 4, light components of higher spatial transverse mode order are greater in loss. Laser oscillations of high-order transverse modes can thus be suppressed while maintaining laser oscillations of low-order transverse modes. A semiconductor laser device and a semiconductor laser device array, which can emit laser light of comparatively high intensity and with which high-order transverse modes can be suppressed, are thereby realized.

Abstract: The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle ?, which is equal to or less than the complementary angle ?c of the total reflection critical angle on the side face of the refractive index type waveguide.

Abstract: The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle ?, which is equal to or less than the complementary angle ?c of the total reflection critical angle on the side face of the refractive index type waveguide.

Abstract: The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces.

Abstract: A lower electrode of a capacitor element and a wiring are formed in a wiring layer that is one layer below an uppermost wiring layer. Subsequently, after the formation of a capacitance insulating film, a TiN film is formed on the entire surface thereof, and then the TiN film is patterned, thereby forming an upper electrode of a capacitor element and a lead wiring for electrically connecting the upper electrode to a wiring of a third wiring layer. Furthermore, in the uppermost layer, a shield is formed covering the upper portion of the capacitor element.

Abstract: A vehicular pedal supporting structure includes a pedal bracket, a pedal, and a guide. A front portion of the pedal bracket is fixed to a first vehicle-body-side constituent member, while a rear portion of the pedal bracket is extended toward a rear of the vehicle. The pedal is supported on lateral side portions of the pedal bracket so as to be swingable around a center shaft. The guide causes the rear portion of the pedal bracket to be displaced backwards and downwards when the pedal bracket is displaced backwards as a result of application of a frontal external force to create a rotational displacement of the rear portion of the pedal bracket relative to the front portion. The pedal bracket is provided with a rupture creation mechanism for ensuring that the rear portion of the pedal bracket is at least partially ruptured from the front portion thereof when the rear portion is rotationally displaced.

Abstract: The semiconductor device comprises a device isolation region 14 formed in a semiconductor substrate 10, a lower electrode 16 formed in a device region 12 defined by the device isolation region and formed of an impurity diffused layer, a dielectric film 18 of a thermal oxide film formed on the lower electrode, an upper electrode 20 formed on the dielectric film, an insulation layer 26 formed on the semiconductor substrate, covering he upper electrode, a first conductor plug 30a buried in a first contact hole 28a formed down to the lower electrode, and a second conductor plug 30b buried in a second contact hole 28b formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode 20 is not formed in the device isolation region 14, whereby the short-circuit between the upper electrode 20 and the lower electrode 16 in the cavity can be prevented. Thus, a capacitor of high reliability can be provided.

Abstract: A vehicular pedal supporting structure includes a pedal bracket, a suspension-type pedal, and a guide. A front portion of the pedal bracket is fixed to a first vehicle-body-side constituent member disposed on a front side of a vehicle, while a rear portion of the pedal bracket is extended toward a rear side of the vehicle. The suspension-type pedal is supported on both lateral portions of the pedal bracket so as to be swingable around a center shaft, and includes a trodden face to which a treading force of a passenger is applied.

Abstract: A lower electrode of a capacitor element and a wiring are formed in a wiring layer that is one layer below an uppermost wiring layer. Subsequently, after the formation of a capacitance insulating film, a TiN film is formed on the entire surface thereof, and then the TiN film is patterned, thereby forming an upper electrode of a capacitor element and a lead wiring for electrically connecting the upper electrode to a wiring of a third wiring layer. Furthermore, in the uppermost layer, a shield is formed covering the upper portion of the capacitor element.

Abstract: A silicon film is formed on a semiconductor substrate, and a silicon oxide film and a polycrystalline silicon film are formed thereon. Patterning is performed for the polycrystalline silicon film to form a capacitive upper electrode. Then, patterning is performed for the silicon oxide film to form a capacitive dielectric film below the capacitive upper electrode, the capacitive dielectric film having a shape larger than that of the capacitive upper electrode. Subsequently, an anti-reflection coating film (silicon nitride film which is silicon-rich) is formed on a full surface. Then, patterning is performed for the silicon film by means of photolithography to form a capacitive lower electrode and a gate electrode of a transistor.

Abstract: A silicon film is formed on a semiconductor substrate, and a silicon oxide film and a polycrystalline silicon film are formed thereon. Patterning is performed for the polycrystalline silicon film to form a capacitive upper electrode. Then, patterning is performed for the silicon oxide film to form a capacitive dielectric film below the capacitive upper electrode, the capacitive dielectric film having a shape larger than that of the capacitive upper electrode. Subsequently, an anti-reflection coating film (silicon nitride film which is silicon-rich) is formed on a full surface. Then, patterning is performed for the silicon film by means of photolithography to form a capacitive lower electrode and a gate electrode of a transistor.

Abstract: A gate insulating film is formed on the surface of active regions of a semiconductor substrate, and a first polysilicon film is deposited on the semiconductor substrate. Impurities are selectively doped into the first silicon film in an area where a capacitor is to be formed. A dielectric film is formed on the first silicon film. A second silicon film doped with impurities is formed on the dielectric film. The second silicon film and dielectric film are patterned so that the second silicon film and dielectric film are left in the area where the capacitor is to be formed, and not left in the area where MISFET are to be formed. A third silicon film is deposited on the whole surface of the substrate.

Abstract: A first silicon film is deposited on a semiconductor substrate. A capacitor dielectric film is deposited on the first silicon film. A second silicon film is deposited on the capacitor dielectric film. The second silicon film is patterned to leave an upper electrode made of the second silicon film above an insulating surface of the semiconductor substrate. A first insulating film is deposited on the upper electrode and the capacitor dielectric film. A lamination structure of the first insulating film and the capacitor dielectric film is anisotropically etched to leave a spacer insulating film made of the first insulating film on the side walls of the upper electrode and to leave a portion of the capacitor dielectric film under the upper electrode and the spacer insulating film. The first silicon film is patterned to leave a lower electrode made of the first silicon film in an area inclusive of the upper electrode and the spacer insulating film.

Abstract: This invention relates to a method and an apparatus for measuring optical characteristics such as Mueller matrices or double refraction of an optical disk in which a laser light which is focussed irradiates on an optical disk so that a tracking and a focus of the irradiation light is controlled based on the reflected light from the optical disk while polarization characteristics of the optical disk are measured based on the reflection light.

Abstract: Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and the second semiconductor layer and a band gap of which is narrower than that of each of the first and second layers, so that band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and that a tunneling current can flow through the third semmiconductor layer owing to an internal electric field of the third semiconductor layer.

Abstract: A novel method which enables a quaternary III-V group crystal to be readily formed on a III-V group crystal so that the former crystal lattice-matches with the latter crystal. More specifically, it is easy to produce a superlattice structure on a III-V group crystal substrate, the superlattice structure consisting of a first III-V group (hereinafter referred to as "III.sup.1 -V.sup.1 ") binary crystal layer which lattice-matches with the substrate, and a III-V group (III.sup.1 -III.sup.2 -V.sup.2) ternary crystal layer which similarly lattice-matches with the substrate. It is possible to obtain an even more stable superlattice layer by selecting the ratio between the film thickness of the (III.sup.1 -V.sup.1) crystal and the film thickness of the (III.sup.1 -III.sup.2 -V.sup.2) crystal so that, when the superlattice structure is mixed-crystallized spontaneously or by means of impurity doping, the mixed-crystallized composition lattice-matches with the previous crystal.

Abstract: A semiconductor device in which two sorts of compound semiconductors having unequal lattice constants are joined, is disclosed.Defects such as dislocations attributed to lattice mismatching are avoided by subjecting one of the compound semiconductors to atomic layer doping with an impurity. Owing to this construction, it is permitted to combine the optimum materials as the compound semiconductors, and the semiconductor device has its performance improved and its design versatility expanded.