Patents by Inventor Akram A. Salman

Akram A. Salman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10930641
    Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: February 23, 2021
    Assignee: Texas Instruments Incorporated
    Inventors: Henry L. Edwards, Akram A. Salman, Md Iqbal Mahmud
  • Publication number: 20210013193
    Abstract: An electronic device includes a substrate having a second conductivity type including a semiconductor surface layer with a buried layer (BL) having a first conductivity type. In the semiconductor surface layer is a first doped region (e.g., collector) and a second doped region (e.g., emitter) both having the first conductivity type, with a third doped region (e.g., a base) having the second conductivity type within the second doped region, wherein the first doped region extends below and lateral to the third doped region. At least one row of deep trench (DT) isolation islands are within the first doped region each including a dielectric liner extending along a trench sidewall from the semiconductor surface layer to the BL with an associated deep doped region extending from the semiconductor surface layer to the BL. The deep doped regions can merge forming a merged deep doped region that spans the DT islands.
    Type: Application
    Filed: September 28, 2020
    Publication date: January 14, 2021
    Inventors: ZAICHEN CHEN, AKRAM A. SALMAN, BINGHUA HU
  • Patent number: 10790275
    Abstract: An electronic device includes a substrate having a second conductivity type including a semiconductor surface layer with a buried layer (BL) having a first conductivity type. In the semiconductor surface layer is a first doped region (e.g., collector) and a second doped region (e.g., emitter) both having the first conductivity type, with a third doped region (e.g., a base) having the second conductivity type within the second doped region, wherein the first doped region extends below and lateral to the third doped region. At least one row of deep trench (DT) isolation islands are within the first doped region each including a dielectric liner extending along a trench sidewall from the semiconductor surface layer to the BL with an associated deep doped region extending from the semiconductor surface layer to the BL. The deep doped regions can merge forming a merged deep doped region that spans the DT islands.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: September 29, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Zaichen Chen, Akram A. Salman, Binghua Hu
  • Publication number: 20200161292
    Abstract: An electronic device includes a substrate having a second conductivity type including a semiconductor surface layer with a buried layer (BL) having a first conductivity type. In the semiconductor surface layer is a first doped region (e.g., collector) and a second doped region (e.g., emitter) both having the first conductivity type, with a third doped region (e.g., a base) having the second conductivity type within the second doped region, wherein the first doped region extends below and lateral to the third doped region. At least one row of deep trench (DT) isolation islands are within the first doped region each including a dielectric liner extending along a trench sidewall from the semiconductor surface layer to the BL with an associated deep doped region extending from the semiconductor surface layer to the BL. The deep doped regions can merge forming a merged deep doped region that spans the DT islands.
    Type: Application
    Filed: November 21, 2018
    Publication date: May 21, 2020
    Inventors: ZAICHEN CHEN, AKRAM A. SALMAN, BINGHUA HU
  • Patent number: 10607984
    Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: March 31, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Yang Xiu, Aravind C. Appaswamy, Akram Salman, Mariano Dissegna
  • Publication number: 20200066710
    Abstract: An integrated circuit (IC) includes a semiconductor substrate in which a plurality of spaced-apart deep trench (DT) structures are formed. The IC further includes a plurality of DEEPN diffusion regions, each DEEPN diffusion region surrounding a corresponding one of the DT structures. Each of the DEEPN diffusion regions merges with at least one neighboring DEEPN diffusion region that surrounds at least one neighboring DT structure. The merged DEEPN diffusion regions may partially isolate two electronic devices, e.g. ESD devices.
    Type: Application
    Filed: October 29, 2019
    Publication date: February 27, 2020
    Inventors: Henry Litzmann EDWARDS, Akram A. SALMAN, Binghua HU
  • Patent number: 10461072
    Abstract: An ESD cell includes an n+ buried layer (NBL) within a p-epi layer on a substrate. An outer deep trench isolation ring (outer DT ring) includes dielectric sidewalls having a deep n-type diffusion (DEEPN diffusion) ring (DEEPN ring) contacting the dielectric sidewall extending downward to the NBL. The DEEPN ring defines an enclosed p-epi region. A plurality of inner DT structures are within the enclosed p-epi region having dielectric sidewalls and DEEPN diffusions contacting the dielectric sidewalls extending downward from the topside surface to the NBL. The inner DT structures have a sufficiently small spacing with one another so that adjacent DEEPN diffusion regions overlap to form continuous wall of n-type material extending from a first side to a second side of the outer DT ring dividing the enclosed p-epi region into a first and second p-epi region. The first and second p-epi region are connected by the NBL.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: October 29, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Henry Litzmann Edwards, Akram A. Salman, Binghua Hu
  • Publication number: 20190304964
    Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.
    Type: Application
    Filed: June 18, 2019
    Publication date: October 3, 2019
    Inventors: Yang Xiu, Arvind C. Appaswamy, Akram Salman, Mariano Dissegna
  • Patent number: 10396199
    Abstract: A semiconductor device includes a body and a transistor fabricated into the body. Isolation material at least partially encases the body. Biasing is coupled to the isolation material, wherein the biasing is for changing the electric potential of the isolation material in response to an electrostatic discharge event.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: August 27, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Aravind C. Appaswamy, Akram A. Salman, Farzan Farbiz, Gianluca Boselli
  • Patent number: 10381342
    Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: August 13, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Yang Xiu, Aravind C Appaswamy, Akram Salman, Mariano Dissegna
  • Patent number: 10373944
    Abstract: Disclosed examples include integrated circuits, fabrication methods and ESD protection circuits to selectively conduct current between a protected node and a reference node during an ESD event, including a protection transistor, a first diode and a resistor formed in a first region of a semiconductor structure, and a second diode formed in a second region isolated from the first region by a polysilicon filled deep trench, where the first and second diodes include cathodes formed by deep N wells alongside the deep trench in the respective first and second regions to use integrated deep trench diode rings to set the ESD protection trigger voltage and prevent a parasitic deep N well/P buried layer junction from breakdown at lower than the rated voltage of the host circuitry.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: August 6, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Akram A. Salman, Muhammad Yusuf Ali
  • Patent number: 10269898
    Abstract: A surrounded emitter bipolar device includes a substrate having a p-epitaxial (p-epi) layer thereon, and a p-base in the p-epi layer. A two dimensional (2D) array of p-base contacts (base units) include the p-base, wherein each base unit includes an outer dielectric structure surrounding an inner dielectric isolation ring. The inner dielectric isolation ring surrounds an n region (n+moat). A first portion of the n+moats are collector (C) units, and a second portion of the n+moats are emitter (E) units. Each of the E units is separated from a nearest neighbor E unit by a C unit.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: April 23, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Henry Litzmann Edwards, Akram A. Salman
  • Publication number: 20190109128
    Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.
    Type: Application
    Filed: December 5, 2018
    Publication date: April 11, 2019
    Inventors: Henry L. Edwards, Akram A. Salman, Md Iqbal Mahmud
  • Patent number: 10249610
    Abstract: In some examples, an electrostatic discharge (ESD) device comprises an insulated-gate bipolar transistor (IGBT) comprising a source terminal, an anode terminal, a gate terminal, and a body terminal; and at least one reverse bias device comprising a first terminal and a second terminal, wherein the first terminal couples to the source terminal and the second terminal couples to the body terminal.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: April 2, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Aravind Chennimalai Appaswamy, James P. Di Sarro, Krishna Praveen Mysore Rajagopal, Akram A. Salman, Muhammad Yusuf Ali
  • Patent number: 10192863
    Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: January 29, 2019
    Assignee: Texas Instruments Incorporated
    Inventors: Henry L. Edwards, Akram A. Salman, Md Iqbal Mahmud
  • Publication number: 20180350794
    Abstract: A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region.
    Type: Application
    Filed: August 3, 2018
    Publication date: December 6, 2018
    Inventors: Akram A. Salman, Farzan Farbiz, Amitava Chatterjee, Xiaoju Wu
  • Publication number: 20180350795
    Abstract: A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region.
    Type: Application
    Filed: August 3, 2018
    Publication date: December 6, 2018
    Inventors: Akram A. Salman, Farzan Farbiz, Amitava Chatterjee, Xiaoju Wu
  • Patent number: 10083951
    Abstract: A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: September 25, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Akram A. Salman, Farzan Farbiz, Amitava Chatterjee, Xiaoju Wu
  • Patent number: 10079227
    Abstract: An apparatus includes: a first SCR device having a first source terminal coupled to a signal terminal, a first body terminal coupled to the first source terminal, a first gate terminal coupled to the signal terminal, and a first drain terminal; a second SCR device having a second drain terminal coupled to the first drain terminal, a second gate terminal coupled to a reference voltage terminal; and a second source terminal coupled to the reference voltage terminal. The apparatus also includes: a third SCR device having a third source terminal coupled to the signal terminal, a third gate terminal coupled to the first gate terminal, and a third drain terminal; a first capacitor coupled between the third drain terminal and the second gate terminal; and a second capacitor coupled between the second gate terminal and the reference voltage terminal.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: September 18, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Yang Xiu, Akram A. Salman, Farzan Farbiz
  • Publication number: 20180247925
    Abstract: Disclosed examples include integrated circuits, fabrication methods and ESD protection circuits to selectively conduct current between a protected node and a reference node during an ESD event, including a protection transistor, a first diode and a resistor formed in a first region of a semiconductor structure, and a second diode formed in a second region isolated from the first region by a polysilicon filled deep trench, where the first and second diodes include cathodes formed by deep N wells alongside the deep trench in the respective first and second regions to use integrated deep trench diode rings to set the ESD protection trigger voltage and prevent a parasitic deep N well/P buried layer junction from breakdown at lower than the rated voltage of the host circuitry.
    Type: Application
    Filed: February 28, 2017
    Publication date: August 30, 2018
    Applicant: Texas Instruments Incorporated
    Inventors: Akram A. Salman, Muhammad Yusuf Ali